Abstract: In a method for manufacturing a piezoelectric oscillating circuit in thin film technology, wherein the oscillating circuit includes a predetermined natural frequency and a plurality of layers, first of all at least a first layer of the piezoelectric oscillating circuit is generated. Subsequently, by processing the first layer a frequency correction is performed. Subsequently, at least a second layer of the piezoelectric oscillating circuit is generated and processed for performing a second frequency correction.

Abstract: A bulk acoustic wave device includes first and second resonators, which are acoustically coupled and electrically connected in parallel.

Abstract: A bulk acoustic wave (BAW) filter device includes a first port, a second port, a first coupled resonator filter stage, a second coupled resonator filter stage and a filter section. The first coupled resonator filter stage includes a first BAW resonator connected to the first port and a second BAW resonator acoustically coupled to the first BAW resonator. The second coupled resonator filter stage includes a third BAW resonator connected to the second port and a fourth BAW resonator acoustically coupled to the third BAW resonator. The filter section includes a fifth BAW resonator, the fifth BAW resonator connected between the second BAW resonator and the fourth BAW resonator.

Abstract: A method for manufacturing a filter device is provided. The filter device comprises a coupled resonator at a first site, a shunt resonator at a second site and a series resonator at a third site, the coupled resonator comprising a first and a second resonator. The method comprising a step of providing a substrate with a piezoelectric layer sandwiched between a first electrode and a first part of a second electrode at the first site and the second site, the piezoelectric layer sandwiched between the first electrode and a second part of the second electrode at the third site. The method further comprising the step of forming a coupling layer on the second electrode, the step of forming a further piezoelectric layer sandwiched between a further first electrode and a further second electrode at the third site and the step of removing the coupling layer at the second and third sites.

Abstract: In a method for manufacturing a piezoelectric oscillating circuit in thin film technology, wherein the oscillating circuit includes a predetermined natural frequency and a plurality of layers, first of all at least a first layer of the piezoelectric oscillating circuit is generated. Subsequently, by processing the first layer a frequency correction is performed. Subsequently, at least a second layer of the piezoelectric oscillating circuit is generated and processed for performing a second frequency correction.

Abstract: An apparatus comprises a device layer structure, a device integrated into the device layer structure, an insulating carrier substrate and an insulating layer being continuously positioned between the device layer structure and the insulating carrier substrate, the insulating layer having a thickness which is less than 1/10 of a thickness of the insulating carrier substrate. An apparatus further comprises a device integrated into a device layer structure disposed on an insulating layer, a housing layer disposed on the device layer structure and housing the device, a contact providing an electrical connection between the device and a surface of the housing layer opposed to the device layer structure and a molding material surrounding the housing layer and the insulating layer, the molding material directly abutting on a surface of the insulating layer being opposed to the device layer structure.

Abstract: A description is given of a BAW apparatus having a first BAW resonator and a second BAW resonator which are connected antiparallel to one another so as to reduce non-linear effects, in particular harmonics.

Abstract: An acoustic resonator is described, the acoustic resonator comprising a stack of a first and a second piezoelectric body, wherein said first and second piezoelectric bodies have substantially the same spatial piezoelectric orientation, an intermediate intermediate electrode being arranged between said first and said second piezoelectric body forming a first terminal of said acoustic resonator, and first and second electrodes, wherein said first electrode is arranged such that said first piezoelectric body is arranged between said first electrode and said intermediate electrode, wherein said second electrode is arranged such that said second piezoelectric body is arranged between said second electrode and said intermediate electrode, and wherein said first and said second electrode are electrically connected to each other forming a second terminal of said acoustic resonator.

Abstract: A duplexer for connection with an antenna comprises an antenna port, a transmitting filter comprising bulk acoustic wave (BAW) resonators having a first antenna side impedance coupled with the antenna port, a receiving filter comprising BAW resonators having a second antenna side impedance coupled with the antenna port, and a shunt inductance coupled between the antenna port and ground. The shunt inductance and the first and second antenna side impedances of the transmitting filter and the receiving filter are selected in such a way that the shunt inductance turns the first and second input impedance in a negative direction in a Smith diagram.

Abstract: A duplexer for connection with an antenna comprises an antenna port, a transmitting filter comprising bulk acoustic wave (BAW) resonators having a first antenna side impedance coupled with the antenna port, a receiving filter comprising BAW resonators having a second antenna side impedance coupled with the antenna port, and a shunt inductance coupled between the antenna port and ground. The shunt inductance and the first and second antenna side impedances of the transmitting filter and the receiving filter are selected in such a way that the shunt inductance turns the first and second input impedance in a negative direction in a Smith diagram.

Abstract: A description is given of a BAW apparatus having a first BAW resonator and a second BAW resonator which are connected antiparallel to one another so as to reduce non-linear effects, in particular harmonics.

Abstract: A BAW resonator includes a first piezoelectric layer made of a material oriented toward a first direction, and a second piezoelectric layer made of a material oriented toward a second direction which is opposed to the first direction. The first piezoelectric layer and the second piezoelectric layer are acoustically coupled with each other.

Abstract: In a method for manufacturing a piezoelectric oscillating circuit in thin film technology, wherein the oscillating circuit includes a predetermined natural frequency and a plurality of layers, first of all at least a first layer of the piezoelectric oscillating circuit is generated. Subsequently, by processing the first layer a frequency correction is performed. Subsequently, at least a second layer of the piezoelectric oscillating circuit is generated and processed for performing a second frequency correction.

Abstract: A BAW resonator includes a first piezoelectric layer made of a material oriented toward a first direction, and a second piezoelectric layer made of a material oriented toward a second direction which is opposed to the first direction. The first piezoelectric layer and the second piezoelectric layer are acoustically coupled with each other.

Abstract: An angular rate sensor includes a ring that is kept floating by electrostatic forces between electrodes without the ring being mechanically or electrically contacted. The ring is divided into segments of differing radial dimensions which cooperate with a multi-phase drive from segmented electrodes to exert a torque on the floating ring which causes the ring to rotate. A control of the position of the ring and a detection of the Coriolis force that occurs are achieved by the voltages applied to the electrodes.