Patents by Inventor Martin Henning Albrecht Vielemeyer

Martin Henning Albrecht Vielemeyer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8779440
    Abstract: Some embodiments show a semiconductor structure including a substrate with a {100} crystal surface plane which includes a plurality of adjacent structured regions at a top side of the substrate. The plurality of adjacent structured regions includes adjacent substrate surfaces with {111} crystal planes and a III-V semiconductor material layer above the top side of the substrate. A semiconductor device region includes at least one semiconductor device structure. The semiconductor device region is arranged above the plurality of adjacent structured regions at the top side of the substrate.
    Type: Grant
    Filed: January 7, 2013
    Date of Patent: July 15, 2014
    Assignee: Infineon Technologies AG
    Inventor: Martin Henning Albrecht Vielemeyer
  • Patent number: 8350273
    Abstract: Some embodiments show a semiconductor structure including a substrate with a {100} crystal surface plane which includes a plurality of adjacent structured regions at a top side of the substrate. The plurality of adjacent structured regions includes adjacent substrate surfaces with {111} crystal planes and a III-V semiconductor material layer above the top side of the substrate. A semiconductor device region includes at least one semiconductor device structure. The semiconductor device region is arranged above the plurality of adjacent structured regions at the top side of the substrate.
    Type: Grant
    Filed: August 31, 2009
    Date of Patent: January 8, 2013
    Assignee: Infineon Technologies AG
    Inventor: Martin Henning Albrecht Vielemeyer
  • Publication number: 20110049681
    Abstract: Some embodiments show a semiconductor structure including a substrate with a {100} crystal surface plane which includes a plurality of adjacent structured regions at a top side of the substrate. The plurality of adjacent structured regions includes adjacent substrate surfaces with {111} crystal planes and a III-V semiconductor material layer above the top side of the substrate. A semiconductor device region includes at least one semiconductor device structure. The semiconductor device region is arranged above the plurality of adjacent structured regions at the top side of the substrate.
    Type: Application
    Filed: August 31, 2009
    Publication date: March 3, 2011
    Inventor: Martin Henning Albrecht Vielemeyer