Abstract: The present invention relates to a method for temporarily interrupting an extracorporeal treatment of blood of a patient by use of a blood treatment apparatus. The method comprises activating or controlling a control device provided and configured to bring the blood treatment apparatus into a state in which the blood treatment session of the patient can be interrupted with the intention to continue the blood treatment session. The present invention further relates to a control device, a blood treatment apparatus, a digital storage means, a computer program product as well as a computer program.

Abstract: An electrical connector includes: at least a first housing part and a second housing part, one of the first housing part and the second housing part engaging, at least partially and concentrically, in an other of the first housing part and the second housing part in an engagement region, the first housing part and the second housing part being rotatable relative to one another in the engagement region about an axis of rotation. The first housing part and the second housing part each have a magnetic structure extending, at least in part, circumferentially on an inside or an outside in the engagement region, the respective magnetic structures interacting.

Abstract: This disclosure relates to a method for temporarily interrupting an extracorporeal treatment of blood of a patient by use of a blood treatment apparatus. The method comprises activating or controlling a control device provided and configured to bring the blood treatment apparatus into a state in which the blood treatment of the patient can be interrupted with the intention to continue the blood treatment. This disclosure further relates to a control device, a blood treatment apparatus, a digital storage means, a computer program product as well as a computer program.

Abstract: An optical component comprises a first layer system exhibiting a first wavelength-dependent reflectivity curve when electromagnetic radiation impinges thereon, and at least one second layer system exhibiting a second wavelength-dependent reflectivity curve when electromagnetic radiation impinges thereon. The first layer system and the second layer system are arranged on different optical surfaces. The wavelength dependencies of the first and the second reflectivity curve at least partially compensate one another so that the relative deviation from a desired reflectivity curve which is linear or constant with respect to the wavelength is no more than 5% within the specified wavelength range for a resultant summated reflectivity for the first layer system and the at least one second layer system. An optical system, such as a microlithography projection exposure apparatus, can include such an optical component.

Abstract: A detection device may be attached to or secured in a vehicle component, with which physical and/or chemical values can be detected. The device may include of at least one of the following: a detection unit placed or formed on a first mount for detecting a physical and/or chemical value, wherein the first mount has at least one mounting interface for attaching the first mount to the vehicle component; and a functional unit to which the detection unit is dedicated, placed or formed on or in a second mount, wherein the second mount has at least one connecting interface for connecting the second mount to the first mount.

Abstract: The invention provides a method 100 of manufacturing a precursor 105a for use in manufacturing a semiconductor-on-diamond substrate 110, the method comprising: a) starting with a base substrate 112; b) forming a sacrificial carrier layer 114 on the base substrate, the sacrificial carrier layer comprising a single-crystal semiconductor; c) forming a single-crystal nucleation layer 116 on the sacrificial carrier layer, the single-crystal nucleation layer arranged to nucleate diamond growth; and d) forming a device layer 118 on the single-crystal nucleation layer, the device layer comprising a single-crystal semiconductor layer or multiple single-crystal semiconductor layers.

Abstract: Treating a reflective optical element (104) for the EUV wavelength range that has a reflective coating on a substrate. The reflective optical element in a holder (106) is irradiated with at least one radiation pulse of a radiation source (102) having a duration of between 1 ?s and 1 s. At least one radiation source (102) and the reflective optical element move relative to one another. Preferably, this is carried out directly after applying the reflective coating in a coating chamber (100). Reflective optical elements of this type are suitable in particular for use in EUV lithography or in EUV inspection of masks or wafers, for example.

Abstract: The invention provides a method 100 of manufacturing a precursor 105a for use in manufacturing a semiconductor-on-diamond substrate 110, the method comprising: a) starting with a base substrate 112; b) forming a sacrificial carrier layer 114 on the base substrate, the sacrificial carrier layer comprising a single-crystal semiconductor; c) forming a single-crystal nucleation layer 116 on the sacrificial carrier layer, the single-crystal nucleation layer arranged to nucleate diamond growth; and d) forming a device layer 118 on the single-crystal nucleation layer, the device layer comprising a single-crystal semiconductor layer or multiple single-crystal semiconductor layers.

Abstract: An evaluation method for radar measurement data of a mobile radar measurement system includes the steps of preparing a multidimensional range-Doppler map from the radar measurement data. In this evaluation method, each multidimensional range-Doppler map is stored together with time information. Moreover, at least one multidimensional range-Doppler map with time information is propagated on the basis of known movement data of the radar measurement system to the current time. The multiple multidimensional range-Doppler maps may be combined to form a combined range-Doppler map.

Abstract: A mirror element, in particular for a microlithographic projection exposure apparatus. According to one aspect, the mirror element includes a substrate (111, 112, 113, 114, 115, 211, 212, 213, 311a-311m, 411, 412, 413) and a layer stack (121, 122, 123, 124, 125, 221, 222, 223, 321a-321m, 421, 422, 423) on the substrate. The layer stack has at least one reflection layer system, wherein a curvature of the mirror element is generated on the basis of a setpoint curvature for a predetermined operating temperature by a non-vanishing bending force exerted by the layer stack, wherein the generated curvature varies by no more than 10% over a temperature interval (?T) of at least 10 K.

Abstract: An electronics module may include at least one power semiconductor that is connected in a thermally conductive manner to an integral heat sink. The electronics module may further include a turbulence element that can move in a laser sintered cooling channel of the heat sink. The turbulence element may be laser sintered with the heat sink in a common laser sintering process.

Abstract: A semiconductor device comprising: a semiconductor component; a diamond heat spreader; and a metal bond, wherein the semiconductor component is bonded to the diamond heat spreader via the metal bond, wherein the metal bond comprises a layer of chromium bonded to the diamond heat spreader and a further metal layer disposed between the layer of chromium and the semiconductor component, and wherein the semiconductor component is configured to operate at an areal power density of at least 1 kW/cm2 and/or a linear power density of at least 1 W/mm.

Abstract: A mirror (10, 20, 30, 40), more particularly for a microlithographic projection exposure apparatus, has an optical effective surface (10a, 20a, 30a, 40a), a mirror substrate (11, 21, 31, 41) and a reflection layer stack (14, 24, 34, 44) for reflecting electromagnetic radiation impinging on the optical effective surface (10a, 20a, 30a, 40a), wherein a layer (13, 23, 33, 43) composed of a group III nitride is arranged between the mirror substrate (11, 21, 31, 41) and the reflection layer stack (14, 24, 34, 44), wherein the group III nitride is selected from the group containing gallium nitride (GaN), aluminum nitride (AlN) and aluminum gallium nitride (AlGaN).

Abstract: Treating a reflective optical element (104) for the EUV wavelength range that has a reflective coating on a substrate. The reflective optical element in a holder (106) is irradiated with at least one radiation pulse of a radiation source (102) having a duration of between 1 ?s and 1 s. At least one radiation source (102) and the reflective optical element move relative to one another. Preferably, this is carried out directly after applying the reflective coating in a coating chamber (100). Reflective optical elements of this type are suitable in particular for use in EUV lithography or in EUV inspection of masks or wafers, for example.

Abstract: The invention concerns a method of and an arrangement for determining the heating condition of a mirror in an optical system, in particular in a microlithographic projection exposure apparatus. In an embodiment the mirror is an EUV mirror and a method according to the invention comprises the following steps: deflecting at least one input measuring beam on to the mirror; ascertaining at least one optical parameter of at least one output measuring beam produced from the input measuring beam after interaction with the mirror; and determining the heating condition of the mirror on the basis of the parameter.

Abstract: A mirror element, in particular for a microlithographic projection exposure apparatus. According to one aspect, the mirror element includes a substrate (111, 112, 113, 114, 115, 211, 212, 213, 311a-311m, 411, 412, 413) and a layer stack (121, 122, 123, 124, 125, 221, 222, 223, 321a-321m, 421, 422, 423) on the substrate. The layer stack has at least one reflection layer system, wherein a curvature of the mirror element is generated on the basis of a setpoint curvature for a predetermined operating temperature by a non-vanishing bending force exerted by the layer stack, wherein the generated curvature varies by no more than 10% over a temperature interval (?T) of at least 10 K.

Abstract: A semiconductor device comprising: a semiconductor component; a diamond heat spreader; and a metal bond, wherein the semiconductor component is bonded to the diamond heat spreader via the metal bond, wherein the metal bond comprises a layer of chromium bonded to the diamond heat spreader and a further metal layer disposed between the layer of chromium and the semiconductor component, and wherein the semiconductor component is configured to operate at an areal power density of at least 1 kW/cm2 and/or a linear power density of at least 1 W/mm.

Abstract: A mirror element, in particular for a microlithographic projection exposure apparatus. According to one aspect, the mirror element includes a substrate (111, 112, 113, 114, 115, 211, 212, 213, 311a-311m, 411, 412, 413) and a layer stack (121, 122, 123, 124, 125, 221, 222, 223, 321a-321m, 421, 422, 423) on the substrate. The layer stack has at least one reflection layer system, wherein a curvature of the mirror element is generated on the basis of a setpoint curvature for a predetermined operating temperature by a non-vanishing bending force exerted by the layer stack, wherein the generated curvature varies by no more than 10% over a temperature interval (?T) of at least 10 K.

Abstract: A mirror (10, 20, 30, 40), more particularly for a microlithographic projection exposure apparatus, has an optical effective surface (10a, 20a, 30a, 40a), a mirror substrate (11, 21, 31, 41) and a reflection layer stack (14, 24, 34, 44) for reflecting electromagnetic radiation impinging on the optical effective surface (10a, 20a, 30a, 40a), wherein a layer (13, 23, 33, 43) composed of a group III nitride is arranged between the mirror substrate (11, 21, 31, 41) and the reflection layer stack (14, 24, 34, 44), wherein the group III nitride is selected from the group containing gallium nitride (GaN), aluminum nitride (AlN) and aluminum gallium nitride (AlGaN).