Patents by Inventor Martin Hetzl

Martin Hetzl has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240272281
    Abstract: An optical sensor arrangement, for example for a LiDAR system, includes an emitter unit and a receiver unit. The emitter unit includes a semiconductor laser configured to emit coherent electromagnetic radiation having at least two wavelengths. Furthermore, the emitter unit is configured to direct the emitted electromagnetic radiation at a remote target, the receiver unit including at least one optical sensor configured to selectively detect electromagnetic radiation depending on the at least two wavelengths. The receiver unit is arranged relative to the emitter unit and configured such that electromagnetic radiation scattered or reflected by the remote target is detectable on the optical sensor.
    Type: Application
    Filed: August 5, 2022
    Publication date: August 15, 2024
    Applicant: ams-OSRAM International GmbH
    Inventors: Martin HETZL, Reiner WINDISCH, Jens EBBECKE
  • Publication number: 20240085563
    Abstract: A radiation emitting device for emitting light may include a laser light source configured to emit light along an emitting direction, and a non-imaging optical system arranged downstream of the laser light source in the emitting direction. The optical system may include a plurality of optical elements arranged along the emitting direction for shaping a radiation characteristic of the radiation emitting device in a horizontal direction and a vertical direction perpendicular to the horizontal direction, such that the radiation characteristic is asymmetrical along the vertical direction. A first optical element of the optical system may be configured to cause spreading of the light along the horizontal direction; a second optical element of the optical system may be configured to cause collimation of the light along the vertical direction, and a third optical element of the optical system may be configured to cause radiation asymmetry along the vertical direction.
    Type: Application
    Filed: December 17, 2021
    Publication date: March 14, 2024
    Inventors: Peter BRICK, Farhang Ghasemi Afshar, Martin HETZL, Simon LANKES, Reiner WINDISCH, Ralph Wirth
  • Publication number: 20230369827
    Abstract: An optoelectronic semiconductor component is specified, including at least one layer stack having - an active zone for generating electromagnetic radiation, - at least one aluminum-containing current constriction layer including a first region and a second region, the second region having a lower electrical conductivity than the first region, and - a side surface which laterally delimits the layer stack and at which the second region is arranged, the second region being an oxidized region. A method for producing an optoelectronic semiconductor component is furthermore specified.
    Type: Application
    Filed: September 3, 2021
    Publication date: November 16, 2023
    Applicant: ams-OSRAM International GmbH
    Inventors: Alexander Behres, Christian Lauer, Martin Hetzl
  • Publication number: 20220102941
    Abstract: In an embodiment, an edge-emitting semiconductor laser diode includes a growth substrate, a semiconductor layer sequence located on the growth substrate, the semiconductor layer sequence having an active layer and an etch stop layer and two facets located opposite each other, wherein the facets bound the semiconductor layer sequence in a lateral direction, wherein the semiconductor layer sequence includes two edge regions adjoining the facets and a central region directly adjoining both edge regions, wherein, within each of the edge regions, a volume fraction of the active layer in the semiconductor layer sequence is smaller than in the central region, wherein the active layer is spaced apart from one facet, wherein a distance of the active layer to the facet varies along a direction parallel to this facet, and wherein the etch stop layer is arranged between the growth substrate and the active layer.
    Type: Application
    Filed: July 9, 2020
    Publication date: March 31, 2022
    Inventors: Martin Hetzl, Petrus Sundgren, Jens Ebbecke, Uwe Strauß