Abstract: A radiation emitting device for emitting light may include a laser light source configured to emit light along an emitting direction, and a non-imaging optical system arranged downstream of the laser light source in the emitting direction. The optical system may include a plurality of optical elements arranged along the emitting direction for shaping a radiation characteristic of the radiation emitting device in a horizontal direction and a vertical direction perpendicular to the horizontal direction, such that the radiation characteristic is asymmetrical along the vertical direction. A first optical element of the optical system may be configured to cause spreading of the light along the horizontal direction; a second optical element of the optical system may be configured to cause collimation of the light along the vertical direction, and a third optical element of the optical system may be configured to cause radiation asymmetry along the vertical direction.

Abstract: An optoelectronic semiconductor component is specified, including at least one layer stack having - an active zone for generating electromagnetic radiation, - at least one aluminum-containing current constriction layer including a first region and a second region, the second region having a lower electrical conductivity than the first region, and - a side surface which laterally delimits the layer stack and at which the second region is arranged, the second region being an oxidized region. A method for producing an optoelectronic semiconductor component is furthermore specified.

Abstract: In an embodiment, an edge-emitting semiconductor laser diode includes a growth substrate, a semiconductor layer sequence located on the growth substrate, the semiconductor layer sequence having an active layer and an etch stop layer and two facets located opposite each other, wherein the facets bound the semiconductor layer sequence in a lateral direction, wherein the semiconductor layer sequence includes two edge regions adjoining the facets and a central region directly adjoining both edge regions, wherein, within each of the edge regions, a volume fraction of the active layer in the semiconductor layer sequence is smaller than in the central region, wherein the active layer is spaced apart from one facet, wherein a distance of the active layer to the facet varies along a direction parallel to this facet, and wherein the etch stop layer is arranged between the growth substrate and the active layer.