Abstract: An optoelectronic device is specified including emitters, each emitter configured to emit electromagnetic radiation, and an assigned receiver for each emitter, configured to receive at least part of the electromagnetic radiation emitted by the emitter, wherein the emitters are configured to be operated with an input voltage, each receiver is configured to provide at least part of an output voltage, each emitter is physically connected to the assigned receiver.

Abstract: An optoelectronic device is specified, said device including a emitter configured to emit electromagnetic radiation having two or more peak wavelengths and to be operated with an input voltage, and a receiver configured to receive the electromagnetic radiation and to provide an output voltage.

Abstract: An optoelectronic device is specified having a transmitter which is designed to emit electromagnetic radiation and to be operated at an input voltage, a support for the transmitter, said support having a top surface and a bottom surface, a first receiver which is designed to receive at least part of the electromagnetic radiation and to supply at least part of an output voltage, wherein the transmitter comprises at least one surface emitter, the at least one surface emitter of the transmitter is mounted on the top surface of the support and radiates at least part of the electromagnetic radiation through the support, the first receiver (3) comprises at least one photodiode, and the first receiver is arranged on the bottom surface of the support.

Abstract: An optical sensor arrangement, for example for a LiDAR system, includes an emitter unit and a receiver unit. The emitter unit includes a semiconductor laser configured to emit coherent electromagnetic radiation having at least two wavelengths. Furthermore, the emitter unit is configured to direct the emitted electromagnetic radiation at a remote target, the receiver unit including at least one optical sensor configured to selectively detect electromagnetic radiation depending on the at least two wavelengths. The receiver unit is arranged relative to the emitter unit and configured such that electromagnetic radiation scattered or reflected by the remote target is detectable on the optical sensor.

Abstract: A radiation emitting device for emitting light may include a laser light source configured to emit light along an emitting direction, and a non-imaging optical system arranged downstream of the laser light source in the emitting direction. The optical system may include a plurality of optical elements arranged along the emitting direction for shaping a radiation characteristic of the radiation emitting device in a horizontal direction and a vertical direction perpendicular to the horizontal direction, such that the radiation characteristic is asymmetrical along the vertical direction. A first optical element of the optical system may be configured to cause spreading of the light along the horizontal direction; a second optical element of the optical system may be configured to cause collimation of the light along the vertical direction, and a third optical element of the optical system may be configured to cause radiation asymmetry along the vertical direction.

Abstract: An optoelectronic semiconductor component is specified, including at least one layer stack having - an active zone for generating electromagnetic radiation, - at least one aluminum-containing current constriction layer including a first region and a second region, the second region having a lower electrical conductivity than the first region, and - a side surface which laterally delimits the layer stack and at which the second region is arranged, the second region being an oxidized region. A method for producing an optoelectronic semiconductor component is furthermore specified.

Abstract: In an embodiment, an edge-emitting semiconductor laser diode includes a growth substrate, a semiconductor layer sequence located on the growth substrate, the semiconductor layer sequence having an active layer and an etch stop layer and two facets located opposite each other, wherein the facets bound the semiconductor layer sequence in a lateral direction, wherein the semiconductor layer sequence includes two edge regions adjoining the facets and a central region directly adjoining both edge regions, wherein, within each of the edge regions, a volume fraction of the active layer in the semiconductor layer sequence is smaller than in the central region, wherein the active layer is spaced apart from one facet, wherein a distance of the active layer to the facet varies along a direction parallel to this facet, and wherein the etch stop layer is arranged between the growth substrate and the active layer.