Abstract: A method of manufacturing an electronic device includes forming a shallow trench isolation (STI) structure on or in a semiconductor surface layer and forming a mask on the semiconductor surface layer, where the mask exposes a surface of a dielectric material of the STI structure and a prospective local oxidation of silicon (LOCOS) portion of a surface of the semiconductor surface layer. The method also includes performing an oxidation process using the mask to oxidize silicon in an indent in the dielectric material of the STI structure and to grow an oxide material on the exposed LOCOS portion of the surface of the semiconductor surface layer.

Abstract: A method of manufacturing an electronic device includes forming a shallow trench isolation (STI) structure on or in a semiconductor surface layer and forming a mask on the semiconductor surface layer, where the mask exposes a surface of a dielectric material of the STI structure and a prospective local oxidation of silicon (LOCOS) portion of a surface of the semiconductor surface layer. The method also includes performing an oxidation process using the mask to oxidize silicon in an indent in the dielectric material of the STI structure and to grow an oxide material on the exposed LOCOS portion of the surface of the semiconductor surface layer.

Abstract: A method of forming a semiconductor device for improving an electrical connection. The semiconductor device includes a top metal layer. A protective dielectric layer is formed over the top metal layer. A sintering operation is performed while the top metal layer is covered by the protective dielectric layer. After the sintering operation, the protective dielectric layer is patterned to expose areas on the top metal layer for bond pads of the semiconductor device. A bond pad cap is formed on the top metal layer where exposed by the protective dielectric layer.

Abstract: Apparatus, and their methods of manufacture, that include an insulating feature above a substrate and a resistor formed on the insulating feature. Forming the resistor includes depositing polysilicon and doping the polysilicon (e.g., in-situ) with a carbon dopant and/or an oxygen dopant.

Abstract: Apparatus, and their methods of manufacture, that include an insulating feature above a substrate and a resistor formed on the insulating feature. Forming the resistor includes depositing polysilicon and doping the polysilicon (e.g., in-situ) with a carbon dopant and/or an oxygen dopant.

Abstract: One or more driving analysis computing devices in a driving analysis system may be configured to collect vehicle driving data and infrastructure data in response to a collision. Vehicle driving data may be received from a first vehicle involved in the collision and a second vehicle involved in the collision. Vehicle driving data may be received for vehicles within a defined radius of the first vehicle and/or the second vehicle. Infrastructure data from infrastructure elements within a defined vicinity of the first vehicle and/or the second vehicle may be received. The received data may be used to initiate an insurance claim, assess fault for the collision, and detect fraudulent claims.

Abstract: One or more driving analysis computing devices in a driving analysis system may be configured to analyze driving data, determine driving behaviors, and determine whether a collision is imminent or has occurred using vehicle-to-vehicle (V2V) communications. Determination of whether a collision has occurred may be based on X-axis, Y-axis, and Z-axis positional data from two vehicles. Driving data from multiple vehicles may be collected by vehicle sensors or other vehicle-based systems, transmitted using V2V communications, and then analyzed and compared to determine various driving behaviors by the drivers of the vehicles.

Abstract: Described examples include a resistor having a substrate having a non-conductive surface and a patterned polysilicon layer on the non-conductive surface, the patterned polysilicon layer including polycrystalline silicon wherein at least 90% of the grains in the polycrystalline silicon are 30 nm or smaller. The resistor also has a first terminal in conductive contact with the patterned polysilicon layer and a second terminal in conductive contact with the polysilicon layer and spaced from the first contact.

Abstract: One or more driving analysis computing devices in a driving analysis system may be configured to analyze driving data, determine driving behaviors, and determine whether a collision is imminent or has occurred using vehicle-to-vehicle (V2V) communications. Determination of whether a collision has occurred may be based on X-axis, Y-axis, and Z-axis positional data from two vehicles. Driving data from multiple vehicles may be collected by vehicle sensors or other vehicle-based systems, transmitted using V2V communications, and then analyzed and compared to determine various driving behaviors by the drivers of the vehicles.

Abstract: Apparatus, and their methods of manufacture, that include an insulating feature above a substrate and a resistor formed on the insulating feature. Forming the resistor includes depositing polysilicon and doping the polysilicon (e.g., in-situ) with a carbon dopant and/or an oxygen dopant.

Abstract: A method of manufacturing an electronic device includes forming a shallow trench isolation (STI) structure on or in a semiconductor surface layer and forming a mask on the semiconductor surface layer, where the mask exposes a surface of a dielectric material of the STI structure and a prospective local oxidation of silicon (LOCOS) portion of a surface of the semiconductor surface layer. The method also includes performing an oxidation process using the mask to oxidize silicon in an indent in the dielectric material of the STI structure and to grow an oxide material on the exposed LOCOS portion of the surface of the semiconductor surface layer.

Abstract: One or more driving analysis computing devices in a driving analysis system may be configured to collect vehicle driving data and infrastructure data in response to a collision. Vehicle driving data may be received from a first vehicle involved in the collision and a second vehicle involved in the collision. Vehicle driving data may be received for vehicles within a defined radius of the first vehicle and/or the second vehicle. Infrastructure data from infrastructure elements within a defined vicinity of the first vehicle and/or the second vehicle may be received. The received data may be used to initiate an insurance claim, assess fault for the collision, and detect fraudulent claims.

Abstract: Described examples include a resistor having a substrate having a non-conductive surface and a patterned polysilicon layer on the non-conductive surface, the patterned polysilicon layer including polycrystalline silicon wherein at least 90% of the grains in the polycrystalline silicon are 30 nm or smaller. The resistor also has a first terminal in conductive contact with the patterned polysilicon layer and a second terminal in conductive contact with the polysilicon layer and spaced from the first contact.

Abstract: One or more driving analysis computing devices in a driving analysis system may be configured to collect vehicle driving data and infrastructure data in response to a collision. Vehicle driving data may be received from a first vehicle involved in the collision and a second vehicle involved in the collision. Vehicle driving data may be received for vehicles within a defined radius of the first vehicle and/or the second vehicle. Infrastructure data from infrastructure elements within a defined vicinity of the first vehicle and/or the second vehicle may be received. The received data may be used to initiate an insurance claim, assess fault for the collision, and detect fraudulent claims.

Abstract: One or more driving analysis computing devices in a driving analysis system may be configured to analyze driving data, determine driving behaviors, and determine whether a collision is imminent or has occurred using vehicle-to-vehicle (V2V) communications. Determination of whether a collision has occurred may be based on X-axis, Y-axis, and Z-axis positional data from two vehicles. Driving data from multiple vehicles may be collected by vehicle sensors or other vehicle-based systems, transmitted using V2V communications, and then analyzed and compared to determine various driving behaviors by the drivers of the vehicles.

Abstract: A method of forming a semiconductor device for improving an electrical connection. The semiconductor device includes a top metal layer. A protective dielectric layer is formed over the top metal layer. A sintering operation is performed while the top metal layer is covered by the protective dielectric layer. After the sintering operation, the protective dielectric layer is patterned to expose areas on the top metal layer for bond pads of the semiconductor device. A bond pad cap is formed on the top metal layer where exposed by the protective dielectric layer.

Abstract: One or more driving analysis computing devices in a driving analysis system may be configured to analyze driving data, determine driving behaviors, and determine whether a collision is imminent or has occurred using vehicle-to-vehicle (V2V) communications. Determination of whether a collision has occurred may be based on X-axis, Y-axis, and Z-axis positional data from two vehicles. Driving data from multiple vehicles may be collected by vehicle sensors or other vehicle-based systems, transmitted using V2V communications, and then analyzed and compared to determine various driving behaviors by the drivers of the vehicles.

Abstract: One or more driving analysis computing devices in a driving analysis system may be configured to collect vehicle driving data and infrastructure data in response to a collision. Vehicle driving data may be received from a first vehicle involved in the collision and a second vehicle involved in the collision. Vehicle driving data may be received for vehicles within a defined radius of the first vehicle and/or the second vehicle. Infrastructure data from infrastructure elements within a defined vicinity of the first vehicle and/or the second vehicle may be received. The received data may be used to initiate an insurance claim, assess fault for the collision, and detect fraudulent claims.

Abstract: A punch (10, 110) for forming a tablet is described. The punch includes a cam surface (24, 124) which in use contacts a compression surface (62). The cam surface includes a substantially planar flat portion (14, 114), the flat portion having a non-circular shape when viewed along a direction (20) normal to the plane of the flat portion.

Abstract: A method of making a polymeric compound, comprising discrete particles responsive to an external stimulus, that is resistant to aggregation in high-shear fields, which includes the addition of a polymerization initiator to a reaction mixture comprising a monomer corresponding to the polymeric compound, wherein the method comprises the portion-wise addition of aliquots of a cross-linking agent to the reaction mixture, wherein an aliquot of the cross-linking agent is added to the reaction mixture both before the addition of the polymerization initiator and after the polymerization has progressed substantially to completion. The polymer particles are largely immune to the effects of transient shear rates at least as high as 106 s?1, whilst maintaining their thermal responsiveness and being present at moderate concentration. The structural and chemical modifications brought by the delayed portion-wise addition of the cross-linking agent allow an improvement in stability in a high-shear field.