Patents by Inventor Martin Hohenadler

Martin Hohenadler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Light-emitting diode chip with current spreading layer
    Patent number: 9853188
    Abstract: A light-emitting diode chip includes a semiconductor layer sequence having a phosphide compound semiconductor material. The semiconductor layer sequence contains a p-type semiconductor region, an n-type semiconductor region, and an active layer arranged between the p-type semiconductor region and the n-type semiconductor region. The active region serves to emit electromagnetic radiation. The n-type semiconductor region faces a radiation exit area of the light-emitting diode chip, and the p-type semiconductor region faces a carrier of the light-emitting diode chip. A current spreading layer having a thickness of less than 500 nm is arranged between the carrier and the p-type semiconductor region. The current spreading layer has one or a plurality of p-doped AlxGa1-xAs layers with 0.5<x?1.
    Type: Grant
    Filed: August 19, 2015
    Date of Patent: December 26, 2017
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Petrus Sundgren, Elmar Baur, Martin Hohenadler, Clemens Hofmann
  • Light-Emitting Diode Chip with Current Spreading Layer
    Publication number: 20150357516
    Abstract: A light-emitting diode chip includes a semiconductor layer sequence having a phosphide compound semiconductor material. The semiconductor layer sequence contains a p-type semiconductor region, an n-type semiconductor region, and an active layer arranged between the p-type semiconductor region and the n-type semiconductor region. The active region serves to emit electromagnetic radiation. The n-type semiconductor region faces a radiation exit area of the light-emitting diode chip, and the p-type semiconductor region faces a carrier of the light-emitting diode chip. A current spreading layer having a thickness of less than 500 nm is arranged between the carrier and the p-type semiconductor region. The current spreading layer has one or a plurality of p-doped AlxGa1-xAs layers with 0.5<x?1.
    Type: Application
    Filed: August 19, 2015
    Publication date: December 10, 2015
    Inventors: Petrus Sundgren, Elmar Baur, Martin Hohenadler, Clemens Hofmann
  • Light-Emitting Diode Chip with Current Spreading Layer
    Publication number: 20130126920
    Abstract: A light-emitting diode chip includes a semiconductor layer sequence having a phosphide compound semiconductor material. The semiconductor layer sequence contains a p-type semiconductor region, an n-type semiconductor region, and an active layer arranged between the p-type semiconductor region and the n-type semiconductor region. The active region serves to emit electromagnetic radiation. The n-type semiconductor region faces a radiation exit area of the light-emitting diode chip, and the p-type semiconductor region faces a carrier of the light-emitting diode chip. A current spreading layer having a thickness of less than 500 nm is arranged between the carrier and the p-type semiconductor region. The current spreading layer has one or a plurality of p-doped AlxGa1-xAs layers with 0.5<x?1.
    Type: Application
    Filed: April 8, 2011
    Publication date: May 23, 2013
    Inventors: Petrus Sundgren, Elmar Baur, Martin Hohenadler, Clemens Hofmann