Patents by Inventor Martin Hostalek

Martin Hostalek has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for the purification of corrosive gases
    Patent number: 7108737
    Abstract: The present invention relates to a novel process for the preparation of high-purity chemicals with an extremely low particle count, such as ammonia gas, hydrogen fluoride and hydrogen chloride, which are also used as aqueous solutions in semiconductor technology the corrosive gas is enriched with an absorbent which is miscible with the gas and in which impurities present in the gas are soluble, and the gas is subsequently subjected to membrane filtration.
    Type: Grant
    Filed: March 4, 2002
    Date of Patent: September 19, 2006
    Assignee: BASF Aktiengesellschaft
    Inventors: Ewald Neumann, Wolfgang Himmler, Werner Büttner, Harald Fritsch, Hans-Jürgen Schmidt, Martin Hostalek
  • Method for the purification of hydrogen peroxide solutions
    Patent number: 6939527
    Abstract: The invention relates to a novel chromatographic process for the further purification of hydrogen peroxide solutions, giving high-purity solutions which can be employed in semiconductor technology under today's high purity requirements.
    Type: Grant
    Filed: March 29, 2001
    Date of Patent: September 6, 2005
    Assignee: Merck Patent GmbH
    Inventors: Dietmar Oeter, Claus Dusemund, Ewald Neumann, Klaus Freissler, Martin Hostalek
  • Method for producing high-purity hydrochloric acid
    Patent number: 6793905
    Abstract: This invention relates to a novel method, which can be carried out according to industrial standards, for producing high-purity hydrochloric acid with a very low particle content, for use in the production of semiconductors.
    Type: Grant
    Filed: April 8, 2002
    Date of Patent: September 21, 2004
    Assignee: Merck Patent GmbH
    Inventors: Werner Büttner, Martin Hostalek, Ching-Jung Kan, Chih-Peng Lu
  • Method for producing high-purity sulphuric acid
    Patent number: 6740302
    Abstract: The invention relates to a novel method for producing high-purity sulfuric acid for use in the semiconductor industry. The method comprises the addition of a hydrogen peroxide solution to an engineered oelum in order to reduce the SO2 concentration, evaporation of the SO3 and separation of acid traces. The high-purity SO3 is then enriched with inert gas and the SO3 is absorbed into sulfuric acid.
    Type: Grant
    Filed: June 26, 2002
    Date of Patent: May 25, 2004
    Assignee: Merck Patent GmbH
    Inventors: Martin Hostalek, Werner Büttner, Rolf Hafner, Chih-Peng Lu, Ching-Jung Kan, Ekkehart Seitz, Ernst Friedel
  • Method for the purification of corrosive gases
    Publication number: 20040089152
    Abstract: The present invention relates to a novel process for the preparation of high-purity chemicals with an extremely low particle count, such as ammonia gas, hydrogen fluoride and hydrogen chloride, which are also used as aqueous solutions in semiconductor technology the corrosive gas is enriched with an absorbent which is miscible with the gas and in which impurities present in the gas are soluble, and the gas is subsequently subjected to membrane filtration.
    Type: Application
    Filed: September 26, 2003
    Publication date: May 13, 2004
    Inventors: Ewald Neumann, Wolfgang Himmler, Werner Buttner, Harald Fritsch, Hans-Jurgen Schmidt, Martin Hostalek
  • Method for the purification of hydrogen peroxide solutions
    Publication number: 20030165420
    Abstract: The invention relates to a novel chromatographic process for the further purification of hydrogen peroxide solutions, giving high-purity solutions which can be employed in semiconductor technology under today's high purity requirements.
    Type: Application
    Filed: November 22, 2002
    Publication date: September 4, 2003
    Inventors: Dietmar Oeter, Claus Dusemund, Ewald Neumann, Klaus Freissler, Martin Hostalek
  • Method for producing high-purity sulphuric acid
    Publication number: 20020192144
    Abstract: The invention relates to a novel method for producing high-purity sulfuric acid for use in the semiconductor industry. The method comprises the addition of a hydrogen peroxide solution to an engineered oelum in order to reduce the SO2 concentration, evaporation of the SO3 and separation of acid traces. The high-purity SO3 is then enriched with inert gas and the SO3 is absorbed into sulfuric acid.
    Type: Application
    Filed: June 26, 2002
    Publication date: December 19, 2002
    Inventors: Martin Hostalek, Werner Buttner, Rolf Hafner, Chih-Peng Lu, Ching-Jung Kan, Erkehart Seitz, Ernst Friedel
  • Buffer solutions for suspensions used in chemical-mechanical polishing
    Patent number: 6338743
    Abstract: The present invention relates to buffer systems in the form of solutions or salts for preparing suspensions which can be used for chemomechanical polishing. In particular, these buffer systems can be used for preparing suspensions having a high pH of 9.5-13 which are used for the chemomechanical polishing of Si and metal surfaces of semiconductors, known as wafers.
    Type: Grant
    Filed: April 3, 2000
    Date of Patent: January 15, 2002
    Assignee: Merck Patent Gesellschaft mit beschrankter Haftung
    Inventors: Claus Dusemund, Rudolf Rhein, Manuela Schweikert, Martin Hostalek
  • Organometallic adduct compounds
    Patent number: 5234716
    Abstract: The invention relates to the use of stabilised organometallic adduct compounds for the production of thin films and epitaxic layers by gas phase deposition.
    Type: Grant
    Filed: September 6, 1991
    Date of Patent: August 10, 1993
    Assignee: Merck Patent Gesellschaft mit Beschraenkter Haftung
    Inventors: Martin Hostalek, Matthias Lokai, Ludwig Pohl
  • Heterocyclic organometallic compounds
    Patent number: 5235078
    Abstract: The invention relates to heterocyclic organometallic compounds formula I below and to the use thereof for the production of thin films and layers on substrates by gas phase deposition.
    Type: Grant
    Filed: December 12, 1990
    Date of Patent: August 10, 1993
    Assignee: Merck Patent Gesellschaft mit Beschrankter Haftung
    Inventors: Ludwig Pohl, Martin Hostalek, Matthias Lokai
  • Use of organometallic compounds to deposit thin films from the gas phase
    Patent number: 5209952
    Abstract: The invention relates to the use of organometallic compounds containing, as metals, aluminum, gallium or indium for the deposition of thin films or epitactic layers from the gas phase.
    Type: Grant
    Filed: September 6, 1991
    Date of Patent: May 11, 1993
    Assignee: Merck Patent Gesellschaft mit beschraenkter Haftung
    Inventors: Dietrich Erdmann, Ludwig Pohl, Martin Hostalek
  • Organometallic compounds
    Patent number: 5099044
    Abstract: The invention relates to organometallic compounds which are intramolecularly stabilized, and also to their use for the production of thin films and epitaxial layers by gas-phase deposition.
    Type: Grant
    Filed: July 16, 1990
    Date of Patent: March 24, 1992
    Assignee: Merck Patent Gesellschaft mit Beschrankter Haftung
    Inventors: Dietrich Erdmann, Ludwig Pohl, Martin Hostalek
  • Cyclic organometallic compounds
    Patent number: 5030741
    Abstract: The invention relates to cyclic organometallic compounds which are intramolecularly stabilized and also to their use to produce thin films and epitaxial layers by gas-phase deposition.
    Type: Grant
    Filed: May 18, 1989
    Date of Patent: July 9, 1991
    Assignee: Merck Patent Gesellschaft mit beschrankter Haftung
    Inventors: Dietrich Erdmann, Ludwig Pohl, Martin Hostalek, Matthias Lokai
  • Organometallic compounds
    Patent number: 5015747
    Abstract: The invention relates to organometallic compounds which are stabilized intramolecularly and have a cyclic or bicyclic structure and to the use thereof for the preparation of thin films and epitaxial layers by gas phase deposition.
    Type: Grant
    Filed: April 7, 1989
    Date of Patent: May 14, 1991
    Assignee: Merck Patent Gesellschaft mit beschrankter Haftung
    Inventors: Martin Hostalek, Ludwig Pohl, Dietrich Erdmann, Herbert Schumann, Uwe Hartmann, Meino Heyen, Holger Jurgensen