Patents by Inventor Martin J. Binns

Martin J. Binns has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for controlling of thermal donor formation in high resistivity CZ silicon
    Patent number: 7135351
    Abstract: The present invention is directed to a single crystal Czochralski-type silicon wafer, and a process for the preparation thereof, which has at least a surface layer of high resistivity, the layer having an interstitial oxygen content which renders it incapable of forming thermal donors in an amount sufficient to affect resistivity upon being subjected to a conventional semiconductor device manufacturing process. The present invention further directed to a silicon on insulator structure derived from such a wafer.
    Type: Grant
    Filed: March 17, 2005
    Date of Patent: November 14, 2006
    Assignee: MEMC Electronic Materials, Inc.
    Inventors: Martin J. Binns, Robert J. Falster, Jeffrey L. Libbert