Patents by Inventor Martin J. Hill

Martin J. Hill has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Trench-gate semiconductor devices and the manufacture thereof
    Patent number: 6784488
    Abstract: A metal-oxide-semiconductor trench-gate semiconductor device in which a substantially intrinsic region (40) is provided below the gate trench (20), which extends from the base of the trench, substantially across the drain drift region (14) towards the drain contact region (14a), such that when the drain-source voltage falls during turn-on of the device its rate of decrease is higher. This reduces the switching losses of the device. The substantially intrinsic region (40) may, for example, be formed by implanting a region below the trench (20) with a damage implant.
    Type: Grant
    Filed: November 12, 2002
    Date of Patent: August 31, 2004
    Assignee: Koninklijke Philips Electronics N.V.
    Inventors: Eddie Huang, Miron Drobnis, Martin J. Hill, Raymond J. E. Hueting
  • Recombination center diffusion controlled by carbon concentration
    Patent number: 6781156
    Abstract: A localised reduced lifetime region (1,25,41) is provided in a semiconductor device formed substantially of silicon. A predetermined concentration of carbon is provided in the region, and then the body is heated to incorporate a lifetime controlling impurity substantially within the carbon region. It is believed that the association between the impurity ions (M+) and the carbon atoms (C) on silicon lattice sites produces C-M+ complexes with significant capture cross-sections. The carbon may be provided by addition during epitaxial growth of silicon material, during bulk growth of the silicon, or by implantation and/or diffusion.
    Type: Grant
    Filed: December 10, 2002
    Date of Patent: August 24, 2004
    Assignee: Koninklijke Philips Electronics N.V.
    Inventors: Miron Drobnis, Martin J. Hill
  • Semiconductor devices and their manufacture
    Publication number: 20030127645
    Abstract: A localised reduced lifetime region (1,25,41) is provided in a semiconductor device formed substantially of silicon. A predetermined concentration of carbon is provided in the region, and then the body is heated to incorporate a lifetime controlling impurity substantially within the carbon region. It is believed that the association between the impurity ions (M+) and the carbon atoms (C) on silicon lattice sites produces C-M+ complexes with significant capture cross-sections. The carbon may be provided by addition during epitaxial growth of silicon material, during bulk growth of the silicon, or by implantation and/or diffusion.
    Type: Application
    Filed: December 10, 2002
    Publication date: July 10, 2003
    Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.
    Inventors: Miron Drobnis, Martin J. Hill
  • Trench-gate semiconductor devices and the manufacture thereof
    Publication number: 20030094650
    Abstract: A metal-oxide-semiconductor trench-gate semiconductor device in which a substantially intrinsic region (40) is provided below the gate trench (20), which extends from the base of the trench, substantially across the drain drift region (14) towards the drain contact region (14a), such that when the drain-source voltage falls during turn-on of the device its rate of decrease is higher. This reduces the switching losses of the device. The substantially intrinsic region (40) may, for example, be formed by implanting a region below the trench (20) with a damage implant.
    Type: Application
    Filed: November 12, 2002
    Publication date: May 22, 2003
    Applicant: KONINKLIJKE PHILIPS ELECTRONICS
    Inventors: Eddie Huang, Miron Drobnis, Martin J. Hill, Raymond J.E. Hueting
  • Process for using photopolymerizable compositions
    Patent number: 4339527
    Abstract: Process for using photopolymerizable compositions involving monomers of ethylenically unsaturated esters of difunctional acids and polymethylene glycols terminated with acrylate and methacrylate groups.
    Type: Grant
    Filed: July 31, 1980
    Date of Patent: July 13, 1982
    Assignee: E. I. Du Pont de Nemours and Company
    Inventor: Martin J. Hill
  • Photopolymerizable compositions useful in dry film photoresist
    Patent number: 4230790
    Abstract: Ethylenically unsaturated esters of difunctional acids and polymethylene glycols terminated with acrylate and methacrylate groups are useful as monomers in photopolymerizable compositions.
    Type: Grant
    Filed: January 31, 1979
    Date of Patent: October 28, 1980
    Assignee: E. I. Du Pont de Nemours and Company
    Inventor: Martin J. Hill