Patents by Inventor Martin Jeff Salinas

Martin Jeff Salinas has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10468282
    Abstract: Embodiments of the present invention provide an apparatus for transferring substrates and confining a processing environment in a chamber. One embodiment of the present invention provides a hoop assembly for using a processing chamber. The hoop assembly includes a confinement ring defining a confinement region therein, and three or more lifting fingers attached to the hoop. The three or more lifting fingers are configured to support a substrate outside the inner volume of the confinement ring.
    Type: Grant
    Filed: April 26, 2018
    Date of Patent: November 5, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Jared Ahmad Lee, Martin Jeff Salinas, Paul B. Reuter, Imad Yousif, Aniruddha Pal
  • Publication number: 20180247850
    Abstract: Embodiments of the present invention provide an apparatus for transferring substrates and confining a processing environment in a chamber. One embodiment of the present invention provides a hoop assembly for using a processing chamber. The hoop assembly includes a confinement ring defining a confinement region therein, and three or more lifting fingers attached to the hoop. The three or more lifting fingers are configured to support a substrate outside the inner volume of the confinement ring.
    Type: Application
    Filed: April 26, 2018
    Publication date: August 30, 2018
    Inventors: Jared Ahmad LEE, Martin Jeff SALINAS, Paul B. REUTER, Imad YOUSIF, Aniruddha PAL
  • Patent number: 10010912
    Abstract: Methods and apparatus for particle reduction in throttle gate valves used in substrate process chambers are provided herein. In some embodiments, a gate valve for use in a process chamber includes a body having an opening disposed therethrough from a first surface to an opposing second surface of the body; a pocket extending into the body from a sidewall of the opening; a gate movably disposed within the pocket between a closed position that seals the opening and an open position that reveals the opening and disposes the gate completely within the pocket; and a plurality of gas ports disposed in the gate valve configured to direct a gas flow into a portion of the gate valve fluidly coupled to the opening.
    Type: Grant
    Filed: May 13, 2014
    Date of Patent: July 3, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Jared Ahmad Lee, Dmitry Lubomirsky, Martin Jeff Salinas, Andrew Nguyen, Tom K. Cho, Eric A. Englhardt, Fernando Silveira
  • Patent number: 9857027
    Abstract: Methods and apparatus for chemical delivery are provided herein. In some embodiments, a first reservoir holds a first volume of fluid, receives a carrier gas, and outputs the carrier gas together with vapor derived from the first volume of fluid. A second reservoir holds a second volume of fluid and is capable of delivering a part of the second volume of fluid to the first reservoir. A self-regulating tube extends from the first reservoir to a region above the second volume of fluid in the second reservoir.
    Type: Grant
    Filed: September 3, 2014
    Date of Patent: January 2, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Martin Jeff Salinas, Youqun Dong, David Thompson, Mei Chang
  • Patent number: 9514933
    Abstract: Provided are atomic layer deposition methods to deposit a film using a circular batch processing chamber with a plurality of sections separated by gas curtains so that each section independently has a process condition.
    Type: Grant
    Filed: December 31, 2014
    Date of Patent: December 6, 2016
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Yu Lei, Srinivas Gandikota, Seshadri Ganguli, Bo Zheng, Rajkumar Jakkaraju, Martin Jeff Salinas, Benjamin Schmiege
  • Publication number: 20160196953
    Abstract: Methods and apparatus for plasma processing are provided herein. In some embodiments, a plasma processing apparatus includes a process chamber having an interior processing volume; a first RF coil disposed proximate the process chamber to couple RF energy into the processing volume; and a second RF coil disposed proximate the process chamber to couple RF energy into the processing volume, the second RF coil disposed coaxially with respect to the first RF coil, wherein the first and second RF coils are configured such that RF current flowing through the first RF coil is out of phase with RF current flowing through the RF second coil.
    Type: Application
    Filed: March 15, 2016
    Publication date: July 7, 2016
    Inventors: VALENTIN N. TODOROW, SAMER BANNA, ANKUR AGARWAL, ZHIGANG CHEN, TSE-CHIANG WANG, ANDREW NGUYEN, MARTIN JEFF SALINAS, SHAHID RAUF
  • Publication number: 20160004259
    Abstract: Methods and apparatus for chemical delivery are provided herein. In some embodiments, a first reservoir holds a first volume of fluid, receives a carrier gas, and outputs the carrier gas together with vapor derived from the first volume of fluid. A second reservoir holds a second volume of fluid and is capable of delivering a part of the second volume of fluid to the first reservoir. A self-regulating tube extends from the first reservoir to a region above the second volume of fluid in the second reservoir.
    Type: Application
    Filed: September 3, 2014
    Publication date: January 7, 2016
    Inventors: MARTIN JEFF SALINAS, YOUQUN DONG, DAVID THOMPSON, MEI CHANG
  • Publication number: 20150194298
    Abstract: Provided are atomic layer deposition methods to deposit a film using a circular batch processing chamber with a plurality of sections separated by gas curtains so that each section independently has a process condition.
    Type: Application
    Filed: December 31, 2014
    Publication date: July 9, 2015
    Inventors: Yu Lei, Srinivas Gandikota, Seshadri Ganguli, Bo Zheng, Rajkumar Jakkaraju, Martin Jeff Salinas, Benjamin Schmiege
  • Publication number: 20140366953
    Abstract: Methods and apparatus for particle reduction in throttle gate valves used in substrate process chambers are provided herein. In some embodiments, a gate valve for use in a process chamber includes a body having an opening disposed therethrough from a first surface to an opposing second surface of the body; a pocket extending into the body from a sidewall of the opening; a gate movably disposed within the pocket between a closed position that seals the opening and an open position that reveals the opening and disposes the gate completely within the pocket; and a plurality of gas ports disposed in the gate valve configured to direct a gas flow into a portion of the gate valve fluidly coupled to the opening.
    Type: Application
    Filed: May 13, 2014
    Publication date: December 18, 2014
    Applicant: APPLIED MATERIALS, INC.
    Inventors: JARED AHMAD LEE, DMITRY LUBOMIRSKY, MARTIN JEFF SALINAS, ANDREW NGUYEN, TOM K. CHO, ERIC A. ENGLHARDT, FERNANDO SILVEIRA
  • Publication number: 20140087561
    Abstract: Embodiments of the present invention provide an apparatus for transferring substrates and confining a processing environment in a chamber. One embodiment of the present invention provides a hoop assembly for using a processing chamber. The hoop assembly includes a confinement ring defining a confinement region therein, and three or more lifting fingers attached to the hoop. The three or more lifting fingers are configured to support a substrate outside the inner volume of the confinement ring.
    Type: Application
    Filed: February 29, 2012
    Publication date: March 27, 2014
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Jared Ahmad Lee, Martin Jeff Salinas, Paul B. Reuter, Imad Yousif, Aniruddha Pal
  • Patent number: 8616224
    Abstract: A method and apparatus for supplying a gas mixture to a load lock chamber is described. In one embodiment, the apparatus supplies a gas mixture to a pair of process chambers, comprising a first ozone generator to provide a first gas mixture to a first process chamber, a second ozone generator to provide a second gas mixture to a second process chamber, a first gas source coupled to the first ozone generator via a first mass flow controller and a first gas line, and coupled to the second ozone generator via a second mass flow controller and a second gas line, and a second gas source coupled to the first ozone generator via a third mass flow controller and a third gas line and coupled to the second ozone generator via fourth mass flow controller and a fourth gas line.
    Type: Grant
    Filed: October 19, 2010
    Date of Patent: December 31, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Jared Ahmad Lee, Martin Jeff Salinas, Ezra Robert Gold, James P. Cruse
  • Patent number: 8562742
    Abstract: Apparatus for the delivery of a gas to a chamber and methods of use thereof are provided herein. In some embodiments, a gas distribution system for a process chamber may include a body having a first surface configured to couple the body to an interior surface of a process chamber, the body having a opening disposed through the body; a flange disposed proximate a first end of the opening opposite the first surface of the body, the flange extending inwardly into the opening and configured to support a window thereon; and a plurality of gas distribution channels disposed within the body and fluidly coupling a channel disposed within the body and around the opening to a plurality of holes disposed in the flange, wherein the plurality of holes are disposed radially about the flange.
    Type: Grant
    Filed: October 19, 2010
    Date of Patent: October 22, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Jared Ahmad Lee, Martin Jeff Salinas, Ankur Agarwal, Ezra Robert Gold, James P. Cruse, Aniruddha Pal, Andrew Nguyen
  • Publication number: 20110265951
    Abstract: Methods and apparatus for twin chamber processing systems are disclosed, and, in some embodiments, may include a first process chamber and a second process chamber having independent processing volumes and a plurality of shared resources between the first and second process chambers. In some embodiments, the shared resources include at least one of a shared vacuum pump, a shared gas panel, or a shared heat transfer source.
    Type: Application
    Filed: October 20, 2010
    Publication date: November 3, 2011
    Applicant: APPLIED MATERIALS, INC.
    Inventors: MING XU, ANDREW NGUYEN, EVANS LEE, JARED AHMAD LEE, JAMES P. CRUSE, CORIE LYNN COBB, MARTIN JEFF SALINAS, ANCHEL SHEYNER, EZRA ROBERT GOLD, JOHN W. LANE
  • Publication number: 20110265887
    Abstract: Apparatus for the delivery of a gas to a chamber and methods of use thereof are provided herein. In some embodiments, a gas distribution system for a process chamber may include a body having a first surface configured to couple the body to an interior surface of a process chamber, the body having a opening disposed through the body; a flange disposed proximate a first end of the opening opposite the first surface of the body, the flange extending inwardly into the opening and configured to support a window thereon; and a plurality of gas distribution channels disposed within the body and fluidly coupling a channel disposed within the body and around the opening to a plurality of holes disposed in the flange, wherein the plurality of holes are disposed radially about the flange.
    Type: Application
    Filed: October 19, 2010
    Publication date: November 3, 2011
    Applicant: APPLIED MATERIALS, INC.
    Inventors: JARED AHMAD LEE, MARTIN JEFF SALINAS, ANKUR AGARWAL, EZRA ROBERT GOLD, JAMES P. CRUSE, ANIRUDDHA PAL, ANDREW NGUYEN
  • Publication number: 20110265831
    Abstract: A method and apparatus for supplying a gas mixture to a load lock chamber is described. In one embodiment, the apparatus supplies a gas mixture to a pair of process chambers, comprising a first ozone generator to provide a first gas mixture to a first process chamber, a second ozone generator to provide a second gas mixture to a second process chamber, a first gas source coupled to the first ozone generator via a first mass flow controller and a first gas line, and coupled to the second ozone generator via a second mass flow controller and a second gas line, and a second gas source coupled to the first ozone generator via a third mass flow controller and a third gas line and coupled to the second ozone generator via fourth mass flow controller and a fourth gas line.
    Type: Application
    Filed: October 19, 2010
    Publication date: November 3, 2011
    Applicant: APPLIED MATERIALS, INC.
    Inventors: JARED AHMAD LEE, MARTIN JEFF SALINAS, EZRA ROBERT GOLD, JAMES P. CRUSE
  • Publication number: 20110269314
    Abstract: Process chambers having shared resources and methods of use are provided. In some embodiments, substrate processing systems may include a first process chamber having a first substrate support disposed within the first process chamber, wherein the first substrate support has a first heater and a first cooling plate to control a temperature of the first substrate support; a second process chamber having a second substrate support disposed within the second process chamber, wherein the second substrate support has a second heater and a second cooling plate to control a temperature of the second substrate support; and a shared heat transfer fluid source having an outlet to provide a heat transfer fluid to the first cooling plate and the second cooling plate and an inlet to receive the heat transfer fluid from the first cooling plate and the second cooling plate.
    Type: Application
    Filed: October 14, 2010
    Publication date: November 3, 2011
    Applicant: APPLIED MATERIALS, INC.
    Inventors: JARED AHMAD LEE, JAMES P. CRUSE, ANDREW NGUYEN, CORIE LYNN COBB, MING XU, MARTIN JEFF SALINAS, ANCHEL SHEYNER
  • Patent number: 7972469
    Abstract: Embodiments of the present invention relate to plasma processing apparatus and methods of use thereof. In some embodiments, a plasma control magnet assembly includes a plurality of magnets arranged in a predetermined pattern that generate a magnetic field having a strength greater than 10 Gauss in a region proximate the assembly and less than 10 Gauss in a region remote from the assembly.
    Type: Grant
    Filed: April 22, 2007
    Date of Patent: July 5, 2011
    Assignee: Applied Materials, Inc.
    Inventors: Hiroji Hanawa, Andrew Nguyen, Keiji Horioka, Kallol Bera, Kenneth S. Collins, Lawrence Wong, Martin Jeff Salinas, Roger A. Lindley, Hong S. Yang
  • Publication number: 20110097901
    Abstract: Embodiments of dual mode inductively coupled plasma reactors and methods of use of same are provided herein. In some embodiments, a dual mode inductively coupled plasma processing system may include a process chamber having a dielectric lid and a plasma source assembly disposed above the dielectric lid. The plasma source assembly includes a plurality of coils configured to inductively couple RF energy into the process chamber to form and maintain a plasma therein, a phase controller for adjusting the relative phase of the RF current applied to each coil in the plurality of coils, and an RF generator coupled to the phase controller and the plurality of coils.
    Type: Application
    Filed: June 23, 2010
    Publication date: April 28, 2011
    Applicant: APPLIED MATERIALS, INC.
    Inventors: SAMER BANNA, VALENTIN N. TODOROW, KENNETH S. COLLINS, ANDREW NGUYEN, MARTIN JEFF SALINAS, ZHIGANG CHEN, ANKUR AGARWAL, ANNIRUDDHA PAL, TSE-CHIANG WANG, SHAHID RAUF
  • Publication number: 20110094994
    Abstract: Methods and apparatus for plasma processing are provided herein. In some embodiments, a plasma processing apparatus includes a process chamber having an interior processing volume; a first RF coil disposed proximate the process chamber to couple RF energy into the processing volume; and a second RF coil disposed proximate the process chamber to couple RF energy into the processing volume, the second RF coil disposed coaxially with respect to the first RF coil, wherein the first and second RF coils are configured such that RF current flowing through the first RF coil is out of phase with RF current flowing through the RF second coil.
    Type: Application
    Filed: June 23, 2010
    Publication date: April 28, 2011
    Applicant: APPLIED MATERIALS, INC.
    Inventors: VALENTIN N. TODOROW, SAMER BANNA, ANKUR AGARWAL, ZHIGANG CHEN, TSE-CHIANG WANG, ANDREW NGUYEN, MARTIN JEFF SALINAS, SHAHID RAUF
  • Publication number: 20110094683
    Abstract: Apparatus for plasma processing are provided. In some embodiments, an RF feed structure includes a first RF feed to couple RF power to a plurality of symmetrically arranged stacked first RF coil elements; a second RF feed coaxially disposed about the first RF feed and electrically insulated therefrom, the second RF feed to couple RF power to a plurality of symmetrically arranged stacked second RF coil elements coaxially disposed with respect to the first RF coil elements. In some embodiments, a plasma processing apparatus includes a first RF coil; a second RF coil coaxially disposed with respect to the first RF coil; a first RF feed coupled to the first RF coil to provide RF power thereto; and a second RF feed coaxially disposed with respect to the first RF feed and electrically insulated therefrom, the second RF feed coupled to the second RF coil to provide RF power thereto.
    Type: Application
    Filed: June 23, 2010
    Publication date: April 28, 2011
    Applicant: APPLIED MATERIALS, INC.
    Inventors: ZHIGANG CHEN, SHAHID RAUF, KENNETH S. COLLINS, MARTIN JEFF SALINAS, SAMER BANNA, VALENTIN N. TODOROW