Abstract: A method is used for producing a bulk SiC crystal having a resistivity of at least 1012 ?cm and a diameter of at least 7.62 cm. An SiC growth gas phase is generated in a crystal growth region. The bulk SiC crystal grows by deposition from the SiC growth gas phase. The SiC growth gas phase is fed from an SiC source material, which is contained in an SiC supply region inside the growing crucible. First dopants which have a flat dopant level at a distance of at most 350 meV from an SiC band edge, and second dopants which have a low-lying dopant level at a distance of at least 500 meV from the SiC band edge, are delivered in gaseous form to the crystal growth region. Bulk SiC crystals are thereby obtained, and large-area SiC substrates obtained therefrom whose resistivity is at least 1012 ?cm everywhere.