Abstract: The compound of formula (II) is an advantageous intermediate for improving the process of synthesizing the linker-drug vc-seco-DUBA, as well as for the overall process for preparing an antibody-drug conjugate comprising the vc-seco-DUBA linker-drug. The methods of making the compound of formula (II) can include recovery of the compound as a solid, such as via crystallization, in high yields and purity.

Abstract: The invention relates to an improved process for preparing triazoloquinazolinones of Formula (I), including 9-benzyl-2-(4-methylphenyl)-2,6-dihydro[1,2,4]triazolo[4,3-c]quinazoline-3,5-dione, pharmaceutical compositions comprising the compounds of Formula (I), including 9-benzyl-2-(4-methylphenyl)-2,6-dihydro[1,2,4]triazolo[4,3-c]quinazoline-3,5-dione, prepared by the improved process, and methods of treatment using the compounds of Formula (I), including 9-benzyl-2-(4-methylphenyl)-2,6-dihydro[1,2,4]triazolo[4,3-c]quinazoline-3,5-dione, prepared by the improved process.

Abstract: A method of dividing a two dimensional array of encapsulated integrated circuits into individual integrated circuit packages uses a first series of parallel cuts (32) extending fully through the leadframe (16) and encapsulation layer (14), and defining rows of the array. The cuts terminate before the beginning and end of the rows such that the integrity of the array is maintained by edge portions (34) at the ends of the rows. After plating contact pads (18), a second series of parallel cuts (36) is made extending fully through the leadframe (16) and encapsulation layer (14). This separates the array into columns thereby providing singulation of packages between the edge portions (34).

Abstract: A method of dividing a two dimensional array of encapsulated integrated circuits into individual integrated circuit packages uses a first series of parallel cuts (32) extending fully through the leadframe (16) and encapsulation layer (14), and defining rows of the array. The cuts terminate before the beginning and end of the rows such that the integrity of the array is maintained by edge portions (34) at the ends of the rows. After plating contact pads (18), a second series of parallel cuts (36) is made extending fully through the leadframe (16) and encapsulation layer (14). This separates the array into columns thereby providing singulation of packages between the edge portions (34).

Abstract: A method for fabricating a photovoltaic element with stabilized efficiency is proposed. The method comprises the following steps: preparing a boron-doped, oxygen-containing silicon substrate; forming an emitter layer on a surface of the silicon substrate; and a stabilization treatment step. The stabilization treatment step comprises keeping the temperature of the substrate during a treatment time within a selectable temperature range having a lower temperature limit of 50° C., preferably 90° C., more preferably 130° C. and even more preferably 160° C. and an upper temperature limit of 230° C., preferably 210° C., more preferably 190° C. and even more preferably 180° C., and generating excess minority carriers in the silicon substrate during the treatment time, for example, by illuminating the substrate or by applying an external voltage. This method can be used to fabricate a photovoltaic element, e.g.

Abstract: A method and device for fabricating a photovoltaic element with stabilized efficiency is proposed. The method comprises the following steps: preparing a boron-doped, oxygen-containing silicon substrate; forming an emitter layer on a surface of the silicon substrate; and a stabilization treatment step. The stabilization treatment step comprises keeping the temperature of the substrate during a treatment time within a selectable temperature range having a lower temperature limit of 50° C., preferably 90° C., more preferably 130° C. and even more preferably 160° C. and an upper temperature limit of 230° C., preferably 210° C., more preferably 190° C. and even more preferably 180° C., and generating excess minority carriers in the silicon substrate during the treatment time, for example, by illuminating the substrate or by applying an external voltage. This method can be used to fabricate a photovoltaic element, e.g.

Abstract: A method for fabricating a photovoltaic element with stabilised efficiency is proposed. The method comprises the following steps: preparing a boron-doped, oxygen-containing silicon substrate; forming an emitter layer on a surface of the silicon substrate; and a stabilisation treatment step. The stabilisation treatment step comprises keeping the temperature of the substrate during a treatment time within a selectable temperature range having a lower temperature limit of 50° C., preferably 90° C., more preferably 130° C. and even more preferably 160° C. and an upper temperature limit of 230° C., preferably 210° C., more preferably 190° C. and even more preferably 180° C., and generating excess minority carriers in the silicon substrate during the treatment time, for example, by illuminating the substrate or by applying an external voltage. This method can be used to fabricate a photovoltaic element, e.g.

Abstract: Processes for making zoledronic acid can be advantageously carried out in a solvent/diluent that comprises a mixture of (i) a polyalkylene glycol and (ii) a cyclic carbonate of the formula (3) wherein n is an integer from 2 to 4, and R1 and R2 each independently represent a hydrogen or a C1-C4 alkyl group.