Patents by Inventor Martin Kaes
Martin Kaes has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9166071Abstract: A polarization resistant solar cell using an oxygen-rich interface layer is provided. The oxygen-rich interface layer may be comprised of SiOxNy, which may have a graded profile that varies between oxygen-rich proximate to the solar cell to nitrogen-rich distal to the solar cell. A silicon oxide passivation layer may be interposed between the solar cell and the SiOxNy graded dielectric layer. The graded SiOxNy dielectric layer may be replaced with a non-graded SiOxNy dielectric layer and a SiN AR coating.Type: GrantFiled: December 24, 2009Date of Patent: October 20, 2015Assignee: Silicor Materials Inc.Inventors: Bill Phan, Renhua Zhang, John Gorman, Omar Sidelkheir, Jean Patrice Rakotoniaina, Alain Paul Blosse, Martin Kaes
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Publication number: 20150020729Abstract: Techniques for the formation of silicon ingots and crystals using silicon feedstock of various grades are described. A common feature is adding a predetermined amount of germanium to the melt and performing a crystallization to incorporate germanium into the silicon lattice of respective crystalline silicon materials. Such incorporated germanium results in improvements of respective silicon material characteristics, including increased material strength and improved electrical properties. This leads to positive effects at applying such materials in solar cell manufacturing and at making modules from those solar cells.Type: ApplicationFiled: June 23, 2014Publication date: January 22, 2015Inventors: Fritz G. Kirscht, Matthias Heuer, Martin Kaes, Kamel Ounadjela
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Patent number: 8758507Abstract: Techniques for the formation of silicon ingots and crystals using silicon feedstock of various grades are described. A common feature is adding a predetermined amount of germanium to the melt and performing a crystallization to incorporate germanium into the silicon lattice of respective crystalline silicon materials. Such incorporated germanium results in improvements of respective silicon material characteristics, including increased material strength and improved electrical properties. This leads to positive effects at applying such materials in solar cell manufacturing and at making modules from those solar cells.Type: GrantFiled: November 24, 2010Date of Patent: June 24, 2014Assignee: Silicor Materials Inc.Inventors: Fritz G. Kirscht, Matthias Heuer, Martin Kaes, Kamel Ounadjela
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Publication number: 20130291939Abstract: The present invention relates to photovoltaic devices such as silicon solar cells. Devices shown exhibit improved low light performance and increased breakdown strength. Reasons for such improvements includes emitter concentration profiles leading to significantly reduced leakage currents.Type: ApplicationFiled: May 7, 2013Publication date: November 7, 2013Inventors: Martin Kaes, Gunnar Stiller, Jean Patrice Rakotoniaina, Fritz G. Kirscht, Olivier Laparra, Kamel Ounadjela
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Patent number: 8404970Abstract: A simplified manufacturing process and the resultant bifacial solar cell (BSC) are provided, the simplified manufacturing process reducing manufacturing costs. The BSC includes an active region located on the front surface of the substrate, formed for example by a phosphorous diffusion step. The back surface includes a doped region, the doped region having the same conductivity as the substrate but with a higher doping level. Contact grids are formed, for example by screen printing. Front junction isolation is accomplished using a laser scribe.Type: GrantFiled: June 15, 2009Date of Patent: March 26, 2013Assignee: Silicor Materials Inc.Inventors: Martin Kaes, Peter Borden, Kamel Ounadjela, Andreas Kraenzl, Alain Blosse, Fritz G. Kirscht
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Patent number: 8298850Abstract: A simplified manufacturing process and the resultant bifacial solar cell (BSC) are provided, the simplified manufacturing process reducing manufacturing costs. The BSC includes an active region located on the front surface of the substrate, formed for example by a phosphorous diffusion step. After removing the PSG, assuming phosphorous diffusion, and isolating the front junction, dielectric layers are deposited on the front and back surfaces. Contact grids are formed, for example by screen printing. Prior to depositing the back surface dielectric, a metal grid may be applied to the back surface, the back surface contact grid registered to, and alloyed to, the metal grid during contact firing.Type: GrantFiled: June 15, 2009Date of Patent: October 30, 2012Assignee: Silicor Materials Inc.Inventors: Martin Kaes, Peter Borden, Kamel Ounadjela, Andreas Kraenzl, Alain Blosse, Fritz G. Kirscht
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Patent number: 8263176Abstract: A method for fabricating a photovoltaic element with stabilized efficiency is proposed. The method comprises the following steps: preparing a boron-doped, oxygen-containing silicon substrate; forming an emitter layer on a surface of the silicon substrate; and a stabilization treatment step. The stabilization treatment step comprises keeping the temperature of the substrate during a treatment time within a selectable temperature range having a lower temperature limit of 50° C., preferably 90° C., more preferably 130° C. and even more preferably 160° C. and an upper temperature limit of 230° C., preferably 210° C., more preferably 190° C. and even more preferably 180° C., and generating excess minority carriers in the silicon substrate during the treatment time, for example, by illuminating the substrate or by applying an external voltage. This method can be used to fabricate a photovoltaic element, e.g.Type: GrantFiled: March 21, 2007Date of Patent: September 11, 2012Assignee: Universität KonstanzInventors: Axel Herguth, Gunnar Schubert, Martin Käs, Giso Hahn, Ihor Melnyk
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Publication number: 20110162716Abstract: A method and device for fabricating a photovoltaic element with stabilized efficiency is proposed. The method comprises the following steps: preparing a boron-doped, oxygen-containing silicon substrate; forming an emitter layer on a surface of the silicon substrate; and a stabilization treatment step. The stabilization treatment step comprises keeping the temperature of the substrate during a treatment time within a selectable temperature range having a lower temperature limit of 50° C., preferably 90° C., more preferably 130° C. and even more preferably 160° C. and an upper temperature limit of 230° C., preferably 210° C., more preferably 190° C. and even more preferably 180° C., and generating excess minority carriers in the silicon substrate during the treatment time, for example, by illuminating the substrate or by applying an external voltage. This method can be used to fabricate a photovoltaic element, e.g.Type: ApplicationFiled: December 17, 2010Publication date: July 7, 2011Applicant: Universitat KonstanzInventors: Axel Herguth, Gunnar Schubert, Giso Hahn, Ihor Melnyk, Martin Käs
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Publication number: 20110126758Abstract: Techniques for the formation of silicon ingots and crystals using silicon feedstock of various grades are described. A common feature is adding a predetermined amount of germanium to the melt and performing a crystallization to incorporate germanium into the silicon lattice of respective crystalline silicon materials. Such incorporated germanium results in improvements of respective silicon material characteristics, including increased material strength and improved electrical properties. This leads to positive effects at applying such materials in solar cell manufacturing and at making modules from those solar cells.Type: ApplicationFiled: November 24, 2010Publication date: June 2, 2011Applicant: Calisolar, Inc.Inventors: Fritz G. Kirscht, Matthias Heuer, Martin Kaes, Kamel Ounadjela
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Publication number: 20110094574Abstract: A polarization resistant solar cell is provided. The solar cell uses a dual layer dielectric stack disposed on the front surface of the cell. The dielectric stack consists of a passivation layer disposed directly on the front cell surface and comprised of either SiOx or SiON, and an outer AR coating comprised of SiCN.Type: ApplicationFiled: December 24, 2009Publication date: April 28, 2011Applicant: Calisolar Inc.Inventors: Renhua Zhang, Bill Phan, John Gorman, Alain Paul Blosse, Martin Kaes
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Publication number: 20110094575Abstract: A polarization resistant solar cell using an oxygen-rich interface layer is provided. The oxygen-rich interface layer may be comprised of SiOxNy, which may have a graded profile that varies between oxygen-rich proximate to the solar cell to nitrogen-rich distal to the solar cell. A silicon oxide passivation layer may be interposed between the solar cell and the SiOxNy graded dielectric layer. The graded SiOxNy dielectric layer may be replaced with a non-graded SiOxNy dielectric layer and a SiN AR coating.Type: ApplicationFiled: December 24, 2009Publication date: April 28, 2011Applicant: Calisolar Inc.Inventors: Bill Phan, Renhua Zhang, John Gorman, Omar Sidelkheir, Jean Patrice Rakotoniaina, Alain Paul Blosse, Martin Kaes
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Patent number: 7887633Abstract: Techniques for the formation of silicon ingots and crystals using silicon feedstock of various grades are described. Common feature is adding a predetermined amount of germanium to the melt and performing a crystallization to incorporate germanium into the silicon lattice of respective crystalline silicon materials. Such incorporated germanium results in improvements of respective silicon material characteristics, mainly increased material strength. This leads to positive effects at applying such materials in solar cell manufacturing and at making modules from those solar cells. A silicon material with a germanium concentration in the range (50-200) ppmw demonstrates an increased material strength, where best practical ranges depend on the material quality generated.Type: GrantFiled: June 16, 2008Date of Patent: February 15, 2011Assignee: Calisolar, Inc.Inventors: Fritz Kirscht, Vera Abrosimova, Matthias Heuer, Anis Jouini, Dieter Linke, Martin Kaes, Jean Patrice Rakotoniaina, Kamel Ounadjela
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Publication number: 20100275984Abstract: A simplified manufacturing process and the resultant bifacial solar cell (BSC) are provided, the simplified manufacturing process reducing manufacturing costs. The BSC includes an active region located on the front surface of the substrate, formed for example by a phosphorous diffusion step. The back surface includes a doped region, the doped region having the same conductivity as the substrate but with a higher doping level. Contact grids are formed, for example by screen printing. Front junction isolation is accomplished using a laser scribe.Type: ApplicationFiled: June 15, 2009Publication date: November 4, 2010Applicant: Calisolar, Inc.Inventors: Martin Kaes, Peter Borden, Kamel Ounadjela, Andreas Kraenzl, Alain Blosse, Fritz G. Kirscht
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Publication number: 20100275983Abstract: A simplified manufacturing process and the resultant bifacial solar cell (BSC) are provided, the simplified manufacturing process reducing manufacturing costs. The BSC includes an active region located on the front surface of the substrate, formed for example by a phosphorous diffusion step. After removing the PSG, assuming phosphorous diffusion, and isolating the front junction, dielectric layers are deposited on the front and back surfaces. Contact grids are formed, for example by screen printing. Prior to depositing the back surface dielectric, a metal grid may be applied to the back surface, the back surface contact grid registered to, and alloyed to, the metal grid during contact firing.Type: ApplicationFiled: June 15, 2009Publication date: November 4, 2010Applicant: Calisolar, Inc.Inventors: Martin Kaes, Peter Borden, Kamel Ounadjela, Andreas Kraenzl, Alain Blosse, Fritz G. Kirscht
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Publication number: 20100275995Abstract: A simplified manufacturing process and the resultant bifacial solar cell (BSC) are provided, the simplified manufacturing process reducing manufacturing costs. The BSC includes a back surface contact grid and an overlaid blanket metal reflector. A doped amorphous silicon layer is interposed between the contact grid and the blanket layer.Type: ApplicationFiled: June 15, 2009Publication date: November 4, 2010Applicant: Calisolar, Inc.Inventors: Martin Kaes, Peter Borden, Kamel Ounadjela, Andreas Kraenzl, Alain Blosse, Fritz G. Kirscht
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Publication number: 20100243036Abstract: A method for fabricating a photovoltaic element with stabilised efficiency is proposed. The method comprises the following steps: preparing a boron-doped, oxygen-containing silicon substrate; forming an emitter layer on a surface of the silicon substrate; and a stabilisation treatment step. The stabilisation treatment step comprises keeping the temperature of the substrate during a treatment time within a selectable temperature range having a lower temperature limit of 50° C., preferably 90° C., more preferably 130° C. and even more preferably 160° C. and an upper temperature limit of 230° C., preferably 210° C., more preferably 190° C. and even more preferably 180° C., and generating excess minority carriers in the silicon substrate during the treatment time, for example, by illuminating the substrate or by applying an external voltage. This method can be used to fabricate a photovoltaic element, e.g.Type: ApplicationFiled: March 21, 2007Publication date: September 30, 2010Applicant: Universitat KonstanzInventors: Axel Herguth, Gunnar Schubert, Martin Käs, Giso Hahn, Ihor Melnyk
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Publication number: 20090308455Abstract: Techniques for the formation of silicon ingots and crystals using silicon feedstock of various grades are described. Common feature is adding a predetermined amount of germanium to the melt and performing a crystallization to incorporate germanium into the silicon lattice of respective crystalline silicon materials. Such incorporated germanium results in improvements of respective silicon material characteristics, mainly increased material strength. This leads to positive effects at applying such materials in solar cell manufacturing and at making modules from those solar cells. A silicon material with a germanium concentration in the range (50-200) ppmw demonstrates an increased material strength, where best practical ranges depend on the material quality generated.Type: ApplicationFiled: June 16, 2008Publication date: December 17, 2009Applicant: CALISOLAR, INC.Inventors: Fritz Kirscht, Vera Abrosimova, Matthias Heuer, Anis Jouini, Dieter Linke, Martin Kaes, Jean Patrice Rakotoniaina, Kamel Ounadjela
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SOLAR CELL AND FABRICATION METHOD USING CRYSTALLINE SILICON BASED ON LOWER GRADE FEEDSTOCK MATERIALS
Publication number: 20090223549Abstract: Formation of a solar cell device from upgraded metallurgical grade silicon which has received at least one defect engineering process and including a low contact resistance electrical path. An anti-reflective coating is formed on an emitter layer and back contacts are formed on a back surface of the bulk silicon substrate. This photovoltaic device may be fired to form a back surface field at a temperature sufficiently low to avoid reversal of previous defect engineering processes. The process further forms openings in the anti-reflective coating and a low contact resistance metal layer, such as nickel layer, over the openings in the anti-reflective coating. The process may anneal the low contact resistance metal layer to form n-doped portion and complete an electrically conduct path to the n-doped layer. This low temperature metallization (e.g., <700° C.) supports the use of UMG silicon for the solar device formation without the risk of reversing earlier defect engineering processes.Type: ApplicationFiled: March 10, 2008Publication date: September 10, 2009Applicant: CaliSolar, Inc.Inventors: Kamel Ounadjela, Jean Patrice Rakotoniaina, Martin Kaes, Dirk Zickermann, Alain Blosse, Abdellatif Zerga, Matthias Heuer, Fritz Kirscht