Patents by Inventor Martin Kamau Ngigi Mungai

Martin Kamau Ngigi Mungai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereof
    Patent number: 10011741
    Abstract: Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at least a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.
    Type: Grant
    Filed: March 2, 2016
    Date of Patent: July 3, 2018
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Xiaobo Shi, John Edward Quincy Hughes, Hongjun Zhou, Daniel Hernandez Castillo, II, Jae Ouk Choo, James Allen Schlueter, Jo-Ann Theresa Schwartz, Laura Ledenbach, Steven Charles Winchester, Saifi Usmani, John Anthony Marsella, Martin Kamau Ngigi Mungai
  • Chemical Mechanical Polishing (CMP) Composition for Shallow Trench Isolation (STI) Applications and Methods of Making Thereof
    Publication number: 20160177134
    Abstract: Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at least a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.
    Type: Application
    Filed: March 2, 2016
    Publication date: June 23, 2016
    Applicant: Air Products and Chemicals, Inc.
    Inventors: Xiaobo Shi, John Edward Quincy Hughes, Hongjun Zhou, Daniel Hernandez Castillo, II, Jae Ouk Choo, James Allen Schlueter, Jo-Ann Theresa Schwartz, Laura Ledenbach, Steven Charles Winchester, Saifi Usmani, John Anthony Marsella, Martin Kamau Ngigi Mungai
  • Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereof
    Patent number: 9305476
    Abstract: Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at least a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.
    Type: Grant
    Filed: May 12, 2015
    Date of Patent: April 5, 2016
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Xiaobo Shi, John Edward Quincy Hughes, Hongjun Zhou, Daniel Hernandez Castillo, II, Jae Ouk Choo, James Allen Schlueter, Jo-Ann Theresa Schwartz, Laura Ledenbach, Steven Charles Winchester, Saifi Usmani, John Anthony Marsella, Martin Kamau Ngigi Mungai
  • Chemical Mechanical Polishing (CMP) Composition for Shallow Trench Isolation (STI) Applications and Methods of Making Thereof
    Publication number: 20150247063
    Abstract: Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at least a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.
    Type: Application
    Filed: May 12, 2015
    Publication date: September 3, 2015
    Applicant: AIR PRODUCTS AND CHEMICALS, INC.
    Inventors: Xiaobo Shi, John Edward Quincy Hughes, Hongjun Zhou, Daniel Hernandez Castillo, II, Jae Ouk Choo, James Allen Schlueter, Jo-Ann Theresa Schwartz, Laura Ledenbach, Steven Charles Winchester, Saifi Usmani, John Anthony Marsella, Martin Kamau Ngigi Mungai
  • Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereof
    Patent number: 9062230
    Abstract: Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at lease a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.
    Type: Grant
    Filed: September 10, 2014
    Date of Patent: June 23, 2015
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Xiaobo Shi, John Edward Quincy Hughes, Hongjun Zhou, Daniel Hernandez Castillo, II, Jae Ouk Choo, James Allen Schlueter, Jo-Ann Theresa Schwartz, Laura Ledenbach, Steve Charles Winchester, Saifi Usmani, John Anthony Marsella, Martin Kamau Ngigi Mungai
  • Chemical Mechanical Polishing (CMP) Composition for Shallow Trench Isolation (STI) Applications and Methods of Making Thereof
    Publication number: 20140374378
    Abstract: Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at lease a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.
    Type: Application
    Filed: September 10, 2014
    Publication date: December 25, 2014
    Applicant: AIR PRODUCTS AND CHEMICALS, INC.
    Inventors: Xiaobo Shi, John Edward Quincy Hughes, Hongjun Zhou, Daniel Hernandez Castillo, II, Jae Ouk Choo, James Allen Schlueter, Jo-Ann Theresa Schwartz, Laura Ledenbach, Steven Charles Winchester, Saifi Usmani, John Anthony Marsella, Martin Kamau Ngigi Mungai
  • Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereof
    Patent number: 8859428
    Abstract: Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at lease a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.
    Type: Grant
    Filed: September 18, 2013
    Date of Patent: October 14, 2014
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Xiaobo Shi, John Edward Quincy Hughes, Hongjun Zhou, Daniel Hernandez Castillo, II, Jae Ouk Choo, James Allen Schlueter, Jo-Ann Theresa Schwartz, Laura Ledenbach, Steve Charles Winchester, Saifi Usmani, John Anthony Marsella, Martin Kamau Ngigi Mungai