Abstract: Systems and methods used in perforation tool assemblies and more particularly charge tubes and self-locking alignment fixtures. The perforation tool assembly comprises an alignment fixture having a plurality of slots and a charge tube having a plurality of protrusions on an end of the charge tube that engage the plurality of slots on the alignment fixture. The perforation tool assembly can also include an alignment finger on an outer edge of the alignment fixture that aligns the charge tube radially with respect to a gun body. The alignment fixture can be formed of steel or a powdered metal. The slots on the alignment fixture can be formed by water-jet cutting, machining, molding, or casting. A plurality of charges can be disposed within the charge tube once assembled. The alignment finger on the alignment fixture can engage a milled slot on an interior surface of the gun body.

Abstract: Systems and methods used in perforation tool assemblies and more particularly charge tubes and self-locking alignment fixtures. The perforation tool assembly comprises an alignment fixture having a plurality of slots and a charge tube having a plurality of protrusions on an end of the charge tube that engage the plurality of slots on the alignment fixture. The perforation tool assembly can also include an alignment finger on an outer edge of the alignment fixture that aligns the charge tube radially with respect to a gun body. The alignment fixture can be formed of steel or a powdered metal. The slots on the alignment fixture can be formed by water-jet cutting, machining, molding, or casting. A plurality of charges can be disposed within the charge tube once assembled. The alignment finger on the alignment fixture can engage a milled slot on an interior surface of the gun body.

Abstract: An interband cascade laser amplifier medium (M) having a number of cascades (C) strung together along a transport direction (T) of charge carriers and each having an electron injector region (I), an amplifier region (V) and an electron collector region (K), wherein the amplifier region (V) has a hole quantum film (1) having a first semiconductor material and an electron quantum film (2) having a second semiconductor material, and wherein the electron collector region (K) has at least one collector quantum film (4) having a third semiconductor material and separated by a first barrier layer (3), and the electron injector region (I) has at least one injector quantum film (5) having a fourth semiconductor material and separated by a second barrier layer (3).

Abstract: A method of curing free-radically curable compositions under an inert gas atmosphere, where the curing, which proceeds in accordance with a free-radical mechanism, is initiated, or initiated and maintained, in the free-radically curable compositions by radiation and the lateral escape of the inert gas atmosphere is prevented, which involves (1) immersing the free-radically curable compositions in an inert gas atmosphere below a depth from which the inert gas atmosphere constantly exhibits its lowest oxygen concentration, and (2) irradiating the free-radically curable compositions below this depth in the inert gas atmosphere, at least one of the radiation sources being arranged beneath the inert gas/air interface, and then (3) emersing the resultant cured compositions again from the inert gas atmosphere, and apparatus (1) according to FIG. 1 for its implementation.

Abstract: The present invention relates to laser diodes with single mode emission at high output powers, as well as to structures and processes facilitating simple manufacture of such a devices. The invention includes a semiconductor laser (10) with a semiconductor substrate (11), a laser layer (13) arranged on the semiconductor substrate, an array of waveguide ridges (18) arranged at a distance from the laser layer, and several strip-shaped lattice structures (23) arranged on the flat surface between the waveguide ridges. The lattice structure (23) is formed on an insulating or barrier layer (26) at a distance from the laser layer above the laser layer (13). Processes for the production of such a semiconductor laser are also disclosed.

Abstract: The present invention relates to laser diodes with single mode emission at high output powers, as well as to structures and processes facilitating simple manufacture of such a devices. The invention includes a semiconductor laser (10) with a semiconductor substrate (11), a laser layer (13) arranged on the semiconductor substrate, an array of waveguide ridges (18) arranged at a distance from the laser layer, and several strip-shaped lattice structures (23) arranged on the flat surface between the waveguide ridges. The lattice structure (23) is formed on an insulating or barrier layer (26) at a distance from the laser layer above the laser layer (13). Processes for the production of such a semiconductor laser are also disclosed.

Abstract: A semiconductor laser (22) with a semiconductor substrate (11), a laser layer (13) arranged on the semiconductor substrate, a waveguide ridge (15) arranged at a distance from the laser layer, and a strip-shaped lattice structure (23) arranged in parallel to the laser layer is disclosed. The lattice structure (23) includes two structural regions (24, 25) which are arranged on both sides of the waveguide ridge (15) and are formed at a distance from the laser layer (13) above the laser layer (13). A process for the production of such a semiconductor laser is also disclosed.

Abstract: A semiconductor laser (22) with a semiconductor substrate (11), a laser layer (13) arranged on the semiconductor substrate, a waveguide ridge (15) arranged at a distance from the laser layer, and a strip-shaped lattice structure (23) arranged in parallel to the laser layer is disclosed. The lattice structure (23) includes two structural regions (24, 25) which are arranged on both sides of the waveguide ridge (15) and are formed at a distance from the laser layer (13) above the laser layer (13). A process for the production of such a semiconductor laser is also disclosed.

Abstract: A semiconductor laser (22) with a semiconductor substrate (11), a laser layer (13) arranged on the semiconductor substrate, a waveguide ridge (15) arranged at a distance from the laser layer, and a strip-shaped lattice structure (23) arranged in parallel to the laser layer is disclosed. The lattice structure (23) includes two structural regions (24, 25) which are arranged on both sides of the waveguide ridge (15) and are formed at a distance from the laser layer (13) above the laser layer (13). A process for the production of such a semiconductor laser is also disclosed.