Abstract: A method for qualitative and/or quantitative analysis of tumor cells, including the following steps: a) generating a dye complex from an aminocoumarin and cyclodextrin; b) mixing the tumor cells with the dye complex prepared in step a); c) incubating the cells with the dye complex prepared in step a); d) analyzing the tumor cells by means of fluorescence microscopy and/or fluorescence spectrometric analysis.

Abstract: Films are deposited on a substrate by a process in which atomic layer deposition (ALD) is used to deposit one layer of the film and pulsed chemical vapor deposition (CVD) is used to deposit another layer of the film. During the ALD part of the process, a layer is formed by flowing sequential and alternating pulses of mutually reactive reactants that deposit self-limitingly on a substrate. During the pulsed CVD part of the process, another layer is deposited by flowing two CVD reactants into a reaction chamber, with at least a first of the CVD reactants flowed into the reaction chamber in pulses, with those pulses overlapping at least partially with the flow of a second of the CVD reactants. The ALD and CVD parts of the process ca be used to deposit layers with different compositions, thereby forming, e.g., nanolaminate films. Preferably, high quality layers are formed by flowing the second CVD reactant into the reaction chamber for a longer total duration than the first CVD reactant.

Abstract: Titanium silicon nitride (TiSiN) films are formed in a cyclic chemical vapor deposition process. In some embodiments, the TiSiN films are formed in a batch reactor using TiCl4, NH3 and SiH4 as precursors. Substrates are provided in a deposition chamber of the batch reactor. In each deposition cycle, a TiN layer is formed on the substrates by flowing TiCl4 into the deposition chamber simultaneously with NH3. The deposition chamber is subsequently flushed with NH3. to prepare the TiN layer for silicon incorporation. SiH4 is subsequently flowed into the deposition chamber. Silicon from the SiH4 is incorporated into the TiN layers to form TiSiN. Exposing the TiN layers to NH3 before the silicon precursor has been found to facilitate efficient silicon incorporation into the TiN layers to form TiSiN.

Abstract: Titanium silicon nitride (TiSiN) films are formed in a cyclic chemical vapor deposition process. In some embodiments, the TiSiN films are formed in a batch reactor using TiCl4, NH3 and SiH4 as precursors. Substrates are provided in a deposition chamber of the batch reactor. In each deposition cycle, a TiN layer is formed on the substrates by flowing TiCl4 into the deposition chamber simultaneously with NH3. The deposition chamber is subsequently flushed with NH3. to prepare the TiN layer for silicon incorporation. SiH4 is subsequently flowed into the deposition chamber. Silicon from the SiH4 is incorporated into the TiN layers to form TiSiN. Exposing the TiN layers to NH3 before the silicon precursor has been found to facilitate efficient silicon incorporation into the TiN layers to form TiSiN.

Abstract: Films are deposited on a substrate by a process in which atomic layer deposition (ALD) is used to deposit one layer of the film and pulsed chemical vapor deposition (CVD) is used to deposit another layer of the film. During the ALD part of the process, a layer is formed by flowing sequential and alternating pulses of mutually reactive reactants that deposit self-limitingly on a substrate. During the pulsed CVD part of the process, another layer is deposited by flowing two CVD reactants into a reaction chamber, with at least a first of the CVD reactants flowed into the reaction chamber in pulses, with those pulses overlapping at least partially with the flow of a second of the CVD reactants. The ALD and CVD parts of the process ca be used to deposit layers with different compositions, thereby forming, e.g., nanolaminate films. Preferably, high quality layers are formed by flowing the second CVD reactant into the reaction chamber for a longer total duration than the first CVD reactant.

Abstract: The present invention relates to the use of a highly concentrated solution of one or more hafnium alkoxides as precursors for hafnium oxide and hafnium oxynitride layers. The present invention relates in particular to the use of a 30 to 90% strength by weight solution of one or more hafnium alkoxides for producing hafnium oxide and hafnium oxynitride layers for CVD or ALD methods. In addition, the invention relates to a process for the production of a hafnium oxide and hafnium oxynitride layer on an article to be coated, and a hafnium alkoxide solution which contains 30 to 90% by weight of one or more hafnium alkoxides. In a further embodiment of the invention, hafnium is replaced by zirconium in said compounds.

Abstract: An electronic device having a housing is provided, the housing having an interior space surrounded by housing walls. A torroidal coil is arranged in the interior space. Furthermore, the housing has a lead-through region which extends from the top to the bottom of the housing. In the lead-through region, which is completely surrounded by the interior space, the torroidal coil, and the housing wall a current-conducting element is accommodated.

Abstract: The present invention relates to inorganic spherical absorption pigments which have a bimodal particle-size distribution, at least one color-providing layer and a final SiO2 layer, and to the use thereof in paints, coatings, printing inks, security printing inks, plastics, ceramic materials, glasses, as tracers, in cosmetic formulations and for the preparation of pigment preparations and dry preparations.

Abstract: A current sensor has a yoke with an air gap, a magnetic field probe arranged in the air gap, a circuit carrier on which the magnetic field probe is mounted, the magnetic field probe being mounted so that overlap a recess of the circuit carrier, and a magnetic flux of the yoke being oriented in the recess substantially perpendicularly to the circuit carrier.

Abstract: A sensor arrangement has a housing, a pressure detector having a measuring diaphragm which is deflectable by a pressurized measurement medium, a sensor circuit attached directly to the measuring diaphragm, an electronic evaluation circuit connected to the sensor circuit and formed as a hybrid circuit, a connector contacted by an element selected from the group consisting of the sensor circuit, the evaluation circuit and both, the hybrid circuit being fastened directly to the measuring diaphragm by a conductive glue which produces electrical connections between the hybrid circuit and the sensor circuit fastened to the measuring diaphragm and produces a ground connection to the housing.

Abstract: The present invention relates to inorganic spherical absorption pigments which have a bimodal particle-size distribution, at least one color-providing layer and a final SiO2 layer, and to the use thereof in paints, coatings, printing inks, security printing inks, plastics, ceramic materials, glasses, as tracers, in cosmetic formulations and for the preparation of pigment preparations and dry preparations.

Abstract: The invention relates to a sensor arrangement with a pressure detector (6) that has a measuring diaphragm, which can be deflected by the pressurized measurement medium. A measuring bridge is provided as a sensor circuit, which is attached directly to the measuring diaphragm. An evaluation circuit is embodied as a hybrid circuit (8) and can be fastened directly to the measuring diaphragm, producing electrical connections (9, 10) between the hybrid circuit (8) and the sensor circuit and a ground connection to the housing (2, 3) of the sensor arrangement (1). The housing (2, 3, 4) of the sensor arrangement (1) is embodied as multi-part and the contacting of the connections of the hybrid circuit (8) with connector pins (11) of the connector (4) can be produced, for example, by means of pressure contacts (12, 13; 23).

Abstract: Highly light-scattering pigment mixture featuring (i) 70-99.9% by weight of a component A consisting of spherical silicon dioxide with a diameter of less than 50 &mgr;m, coated with titanium dioxide and optionally a further layer of SiO2, and (ii) 0.1-30% by weight of a component B consisting of spherical silicon dioxide with a diameter of less than 50 &mgr;m, coated with titanium dioxide as a first layer and iron(III) oxide as a second, outer layer, the refractive index of the pigment being adjusted to a value of between 1.45 and 1.65.

Abstract: Highly light-scattering pigment mixture featuring

Abstract: A method for manufacturing chip stacks in which wafers are stacked one on top of the other. The wafer is provided with an adhesive foil on its bottom, and is subsequently cut into chips so that the adhesive foil remains intact and the chips adhering to the adhesive foil are stacked one on top of the other. A first layer of chips is reversibly attached to a baseplate, the adhesive foil is removed, the next layer of chips is attached to the bottom side of the chips already fastened to the baseplate, the adhesive foil is removed, and the last two steps are repeated until the desired number of chips is stacked one on top of the other.

Abstract: Spherical SiO.sub.2 particles with a size of from 5 to 500 nm coated at individual points with TiO.sub.2, Fe.sub.2 O.sub.3 or ZrO.sub.2 particles with a size of less than 60 nm. The coated SiO.sub.2 particles can be aftercoated with silanes or further metal oxides. The products obtained are used for pigmenting paints, printing inks, plastics and coatings or as sunscreen agents.

Abstract: The invention relates to dispersions of spherical inorganic particles, organic dispersing media having solidification points in the range of 20.degree.-120.degree. C. being used as dispersants.