Patents by Inventor Martin Kuball

Martin Kuball has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Off-axis silicon carbide substrates
    Patent number: 8823014
    Abstract: A method of epitaxial growth of a material on a crystalline substrate includes selecting a substrate having a crystal plane that includes a plurality of terraces with step risers that join adjacent terraces. Each terrace of the plurality or terraces presents a lattice constant that substantially matches a lattice constant of the material, and each step riser presents a step height and offset that is consistent with portions of the material nucleating on adjacent terraces being in substantial crystalline match at the step riser. The method also includes preparing a substrate by exposing the crystal plane; and epitaxially growing the material on the substrate such that the portions of the material nucleating on adjacent terraces merge into a single crystal lattice without defects at the step risers.
    Type: Grant
    Filed: December 13, 2010
    Date of Patent: September 2, 2014
    Assignees: Kansas State University Research Foundation, State University of New York Stony Brook, The University of Bristol
    Inventors: James Edgar, Michael Dudley, Martin Kuball, Yi Zhang, Guan Wang, Hui Chen, Yu Zhang
  • Off-Axis Silicon Carbide Substrates
    Publication number: 20110220915
    Abstract: A method of epitaxial growth of a material on a crystalline substrate includes selecting a substrate having a crystal plane that includes a plurality of terraces with step risers that join adjacent terraces. Each terrace of the plurality or terraces presents a lattice constant that substantially matches a lattice constant of the material, and each step riser presents a step height and offset that is consistent with portions of the material nucleating on adjacent terraces being in substantial crystalline match at the step riser. The method also includes preparing a substrate by exposing the crystal plane; and epitaxially growing the material on the substrate such that the portions of the material nucleating on adjacent terraces merge into a single crystal lattice without defects at the step risers.
    Type: Application
    Filed: December 13, 2010
    Publication date: September 15, 2011
    Inventors: James Edgar, Michael Dudley, Martin Kuball, Yi Zhang, Guan Wang, Hui Chen, Yu Zhang