Patents by Inventor Martin Lübbe

Martin Lübbe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7528459
    Abstract: A monolithically integrated punch-through diode with a Schottky-like behavior. This is achieved as a Schottky-metal area (16) is deposited onto at least part of the first p-doped well's (9) surface. The Schottky-metal area (16) and the p-doped well (9) form the metal-semiconductor-transition of a Schottky-diode. The overvoltage protection of the inventive PT-diode is improved as the forward characteristic has a voltage drop that is less than 0.5V.
    Type: Grant
    Filed: May 24, 2004
    Date of Patent: May 5, 2009
    Assignee: NXP B.V.
    Inventors: Hans-Martin Ritter, Martin Lübbe, Jochen Wynants