Abstract: A method and apparatus for transporting a positive ion beam to a distant target. An ion channel is created as a path to the target, and the beam injected into the channel at a mildly-relativistic beam velocity. Because the beam is mildly-relativistic, the electric field caused by its positive charge propagates well in advance of the beam, attracting free electrons in the plasma channel and pulling them into the beam along its axis of propagation. The current which is initiated by this precursor electron flow, is sustained during the duration of the beam, and is then a combination of the beam current and additional current carried by the electrons within the channel. As a result, a magnetic flux circulates annularly about the beam of a sufficient magnitude to pinch the beam.

Abstract: The large area plasma processing system (LAPPS) is a system wherein an elron beam is used to produce a plasma. A large area uniform plasma is produced where length and width can be comparable (10's-100's of cm) and very much larger than the plasma thickness (.about.1 cm). The plasma distribution is created independent of the surface to be processed and the bias applied to the surface. The beam-produced plasma has a low intrinsic electron and excitation temperature plasma, allowing the process to be conducted with better control of free radical production. A material, such as a substrate, being processed may be placed in close proximity to plasma with controlled ion bombardment or without substantial bombardment by energetic ions. The system also offers a large available area for gas inflow and removal from the processing chamber and cathode chamber so as not to contaminate the material being processed or damage the cathode.