Abstract: A power half-bridge module may include: a busbar carrier with insulation embedding a first busbar with two longitudinal sections; a semiconductor carrier with a second busbar and a third busbar in a row in the longitudinal direction of the busbar carrier; a first semiconductor switch with a lower-side load-current contact area on the second busbar; and a second semiconductor switch with a lower-side load-current contact area on the third busbar. The first busbar has a contact area on the first section and a second contact area on the second section. The busbar carrier has a recess at the height of the second section and extending from one surface to another. The semiconductor carrier is arranged on the second surface of the busbar carrier so both switches protrude into the recess. The second switch has an upper-side load-current contact area electrically connected to the second contact area of the first busbar.

Abstract: A power semiconductor circuit includes at least one semiconductor having at least one contact area, and at least one bonding conductor strip having at least one contact region fastened on at least one of the contact areas. The contact region of the bonding conductor strip includes cutouts.

Abstract: A power semiconductor circuit includes at least one semiconductor having at least one contact area, and at least one bonding conductor strip having at least one contact region fastened on at least one of the contact areas. The contact region of the bonding conductor strip includes cutouts.