Abstract: Proposed is an optical component comprising: at least one first waveguide, the first waveguide comprising at least one partially reflective output end facet, wherein light passing the output end facet of the first waveguide propagates along a first propagation direction, and at least one second waveguide receiving the light passing the output end facet of the first waveguide at an input end facet of the second waveguide and guiding the light in a second propagation direction, wherein the output end facet and the input end facet are spaced from each other; and wherein the first waveguide and the second waveguide are arranged such that the first propagation direction and the second propagation direction are different. This proposal provides a concept, which is more efficient in view of coupling efficiency between the waveguides of the optical component.

Abstract: A thermally tunable laser includes: a substrate; a laser resonator, wherein the laser resonator includes a gain section, and wherein the laser resonator includes a tuning section; a heating arrangement; a heat sink arrangement for dissipating a heat flow from the laser resonator to the heat sink arrangement; and a hole arrangement for influencing the heat flow from the laser resonator to the heat sink arrangement, wherein the hole arrangement is arranged between the substrate and the heat sink arrangement, wherein one or more holes of the hole arrangement include at least one hole being arranged within a horizontal range of the tuning section, so that a thermal resistance between the tuning section and the heat sink arrangement is increased.

Abstract: Embodiments of the present invention include an apparatus for generating laser radiation with a semiconductor substrate, an intermediate layer arranged on the semiconductor substrate, and a Lateral Current Injection (LCI) laser arrangement arranged on the intermediate layer, wherein the intermediate layer includes a cavity extending at least under a laser strip of the LCI laser arrangement.

Abstract: A thermally tunable laser includes: a substrate; a laser resonator, wherein the laser resonator includes a gain section, and wherein the laser resonator includes a tuning section; a heating arrangement; a heat sink arrangement for dissipating a heat flow from the laser resonator to the heat sink arrangement; and a hole arrangement for influencing the heat flow from the laser resonator to the heat sink arrangement, wherein the hole arrangement is arranged between the substrate and the heat sink arrangement, wherein one or more holes of the hole arrangement include at least one hole being arranged within a horizontal range of the tuning section, so that a thermal resistance between the tuning section and the heat sink arrangement is increased.

Abstract: What is shown is a method for manufacturing a semiconductor light source. The semiconductor light source has a substrate and a layer sequence arranged above the substrate, the same having a light-emitting layer and an upper boundary layer arranged above the light-emitting layer. The layer sequence is patterned in order to form a light-emitting stripe for defining the semiconductor light source and an alignment stripe, extending in parallel thereto, as a horizontal alignment mark at the same time. Then, a cover layer is applied on the patterned layer sequence and a part of the cover layer is removed in order to expose the alignment stripe and expose a region of the layer sequence outside the light-emitting stripe and spaced apart from a light-entrance edge or a light-exit edge of the light-emitting stripe as a vertical alignment mark.

Abstract: What is shown is a method for manufacturing a semiconductor light source. The semiconductor light source has a substrate and a layer sequence arranged above the substrate, the same having a light-emitting layer and an upper boundary layer arranged above the light-emitting layer. The layer sequence is patterned in order to form a light-emitting stripe for defining the semiconductor light source and an alignment stripe, extending in parallel thereto, as a horizontal alignment mark at the same time. Then, a cover layer is applied on the patterned layer sequence and a part of the cover layer is removed in order to expose the alignment stripe and expose a region of the layer sequence outside the light-emitting stripe and spaced apart from a light-entrance edge or a light-exit edge of the light-emitting stripe as a vertical alignment mark.

Abstract: A combined Gain-SOA (Semiconductor Optical Amplifier) Chip is provided for forming a hybrid laser by a combination with an external reflector, the Gain-SOA Chip comprising a gain section and an SOA section, wherein an optical grating is arranged between the gain section and the SOA section.

Abstract: A combined Gain-SOA (Semiconductor Optical Amplifier) Chip is provided for forming a hybrid laser by a combination with an external reflector, the Gain-SOA Chip comprising a gain section and an SOA section, wherein an optical grating is arranged between the gain section and the SOA section.

Abstract: A semiconductor laser includes an active region designed as a DFB laser and a passive resonator section that is optically coupled to the active region. The active region has a first section with a Bragg grating and a second section with a second Bragg grating that differs from the first Bragg grating. The two Bragg gratings differ from one another such that one and only one main mode of a DFB mode spectrum of the first section overlaps with one of two main modes of a DFB mode spectrum of the second section.