Patents by Inventor Martin NIKL

Martin NIKL has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240183061
    Abstract: The invention relates to a method of producing a crystal from a material with the general composition of CexGdyY1?x?yAlO3 known to the professional public for scintillation crystal detectors, which has not yet been industrially produced by the Czochralski method. The invented method makes it possible to produce crystals with a diameter larger than units of mm. In particular, the invention adds to the initial Czochralski method the steps of annealing the input raw materials as well as the controlled flow of a reducing hydrogen-argon atmosphere through a crystal growth furnace.
    Type: Application
    Filed: November 27, 2023
    Publication date: June 6, 2024
    Inventors: Karel BLAZEK, Martin NIKL, Jan TOUS, Karel BARTOS, Jan POLAK, Tomáš MAREK
  • Patent number: 10976451
    Abstract: Currently, the known method of shortening the scintillation response of scintillation material is to suppress the amplitude-minor slower components of the scintillation response, whereas the possibilities of significant shortening of the amplitude-dominant component of the scintillation response in this method are limited. The invention concerns the method of shortening the scintillation response of scintillator luminescence centres which uses co-doping with Ce or Pr together with co-doping with ions from the lanthanoids, 3d transition metals, 4d transition metals or 5s2 or 6s2 ions group. Having had the luminescence centres electrons excited as a result of absorbed electromagnetic radiation, the scintillator created in this method is capable of taking away a part of the energy from the excited luminescence centres via a non-radiative energy transfer, which results in a significant shortening of the time of duration of the amplitude-dominant component of the scintillation response.
    Type: Grant
    Filed: October 5, 2016
    Date of Patent: April 13, 2021
    Assignees: CRYTUR, SPOL.S R.O., FYZIKÁLN.Í´ÚSTAV AV CR, V.V.I
    Inventors: Jind{hacek over (r)}ich Hou{hacek over (z)}vi{hacek over (c)}ka, Karel Bla{hacek over (z)}ek, Petr Horodyský, Martin Nikl, Pavel Bohá{hacek over (c)}ek
  • Publication number: 20180284300
    Abstract: Problem to be solved: Currently, the known manner of shortening the scintillation response of scintillation material is to suppress the amplitude-minor slower components (2) of the scintillation response, whereas the possibilities of significant shortening of the amplitude-dominant component of the scintillation response in this manner are limited. Solution: The invention concerns the manner of shortening the scintillation response of scintillator luminescence centres which uses co-doping with Ce or Pr together with co-doping with ions from the lanthanoids, 3d transition metals, 4d transition metals or 5s2 or 6s2 ions group.
    Type: Application
    Filed: October 5, 2016
    Publication date: October 4, 2018
    Inventors: Jindrich HOUZVICKA, Karel BLAZEK, Petr HORODYSKÝ, Martin NIKL, Pavel BOHÁCEK
  • Patent number: 10067246
    Abstract: A scintillation detector for detecting ionizing radiation, which comprises: a monocrystalline substrate layer; at least one bottom nitride semiconductor layer; an active area on top of the nitride bottom semiconductor layer, which comprises a plurality of alternating nitride semiconductor layers of substantially the same polarization, each couple of the alternating layers consists of a barrier layer of a AlybInxbGa1-xb-ybN type and a potential well layer of a AlywInxwGa1-xw-ywN type for radiant recombinations of electrons and holes, where xb?xw and yb?yw is valid; at least one top nitride semiconductor layer on top of the active area; and at least one GaN buffer layer for binding with epitaxy on top of said monocrystalline substrate a structure which comprises: the bottom nitride semiconductor layer; the alternating layers of the active area; and the top nitride semiconductor layer; each of the nitride semiconductor layers has the general formula of AlyInxGa1-x-yN.
    Type: Grant
    Filed: February 8, 2016
    Date of Patent: September 4, 2018
    Assignees: CRYTUR, SPOL. S R.O., FYZIKÁLNÍ ÚSTAV AV CR, V.V.I.
    Inventors: Alice Hospodková, Karel Bla{circumflex over (z)}ek, Eduard Hulicius, Jan Touŝ, Martin Nikl
  • Publication number: 20180059268
    Abstract: The scintillation detector for the detection of ionising radiation, especially electron, X-ray or particle radiation, including a monocrystalline substrate (1), minimally one buffer layer (2), minimally one nitride semiconductor layer (3, 4, 5, 6) applied onto the substrate (1) with epitaxy which is described by the AlyInxGa1-x-yN general formula where 0?x?1, 0?y?1 and 0?x+y?1 is valid, where minimally two nitride semiconductor layers (3, 4) are arranged in a layered heterostructure, whose structure contains minimally one potential well for radiant recombinations of electrons and holes.
    Type: Application
    Filed: February 8, 2016
    Publication date: March 1, 2018
    Inventors: Alice HOSPODKOVÁ, Karel BLAZEK, Eduaró HULICIUS, Jan TOUS, Martin NIKL