Abstract: The invention relates to a method of producing a crystal from a material with the general composition of CexGdyY1?x?yAlO3 known to the professional public for scintillation crystal detectors, which has not yet been industrially produced by the Czochralski method. The invented method makes it possible to produce crystals with a diameter larger than units of mm. In particular, the invention adds to the initial Czochralski method the steps of annealing the input raw materials as well as the controlled flow of a reducing hydrogen-argon atmosphere through a crystal growth furnace.

Abstract: Currently, the known method of shortening the scintillation response of scintillation material is to suppress the amplitude-minor slower components of the scintillation response, whereas the possibilities of significant shortening of the amplitude-dominant component of the scintillation response in this method are limited. The invention concerns the method of shortening the scintillation response of scintillator luminescence centres which uses co-doping with Ce or Pr together with co-doping with ions from the lanthanoids, 3d transition metals, 4d transition metals or 5s2 or 6s2 ions group. Having had the luminescence centres electrons excited as a result of absorbed electromagnetic radiation, the scintillator created in this method is capable of taking away a part of the energy from the excited luminescence centres via a non-radiative energy transfer, which results in a significant shortening of the time of duration of the amplitude-dominant component of the scintillation response.

Abstract: Problem to be solved: Currently, the known manner of shortening the scintillation response of scintillation material is to suppress the amplitude-minor slower components (2) of the scintillation response, whereas the possibilities of significant shortening of the amplitude-dominant component of the scintillation response in this manner are limited. Solution: The invention concerns the manner of shortening the scintillation response of scintillator luminescence centres which uses co-doping with Ce or Pr together with co-doping with ions from the lanthanoids, 3d transition metals, 4d transition metals or 5s2 or 6s2 ions group.

Abstract: A scintillation detector for detecting ionizing radiation, which comprises: a monocrystalline substrate layer; at least one bottom nitride semiconductor layer; an active area on top of the nitride bottom semiconductor layer, which comprises a plurality of alternating nitride semiconductor layers of substantially the same polarization, each couple of the alternating layers consists of a barrier layer of a AlybInxbGa1-xb-ybN type and a potential well layer of a AlywInxwGa1-xw-ywN type for radiant recombinations of electrons and holes, where xb?xw and yb?yw is valid; at least one top nitride semiconductor layer on top of the active area; and at least one GaN buffer layer for binding with epitaxy on top of said monocrystalline substrate a structure which comprises: the bottom nitride semiconductor layer; the alternating layers of the active area; and the top nitride semiconductor layer; each of the nitride semiconductor layers has the general formula of AlyInxGa1-x-yN.

Abstract: The scintillation detector for the detection of ionising radiation, especially electron, X-ray or particle radiation, including a monocrystalline substrate (1), minimally one buffer layer (2), minimally one nitride semiconductor layer (3, 4, 5, 6) applied onto the substrate (1) with epitaxy which is described by the AlyInxGa1-x-yN general formula where 0?x?1, 0?y?1 and 0?x+y?1 is valid, where minimally two nitride semiconductor layers (3, 4) are arranged in a layered heterostructure, whose structure contains minimally one potential well for radiant recombinations of electrons and holes.