Abstract: A sputtering apparatus and method for high rate deposition of electrically insulating and semiconducting coatings with substantially uniform stoichiometry. At least one set of vertically mounted, dual and triple rotatable cylindrical (or planar) magnetrons with associated vacuum pumps, form semi-isolated sputtering modules. The sputtering modules can be independently controlled for the sequential deposition of layers of similar or different materials. Constant voltage operation of AC power with an optional reactive gas flow feedback loop maintains constant coating stoichiometry during small changes in pumping speed caused by substrate motion. The coating method is extremely stable over long periods (days) of operation, with the film stoichiometry being selectable by the voltage control point.

Abstract: A method for texturing a substrate and the resulting substrate. A substrate made of glass ceramic is textured using laser radiation to form a texture feature. The laser radiation may be applied with a degree of overlap. Additionally, the texture feature may be elongated or continuous in the circumferential direction. The radiation is applied such that the texture feature has smaller texture features formed thereon.

Abstract: A method for manufacturing a magnetic disk comprises the steps of depositing NiP (20) on a substrate (22); depositing NiNb (24) on the NiP; and laser texturing the NiNb. "Sombrero" shaped texture features are more easily formed on the substrate/NiP/NiNb structure than a substrate/NiP structure. The disk is completed by depositing an underlayer (e.g. sputtered Cr or NiP), a magnetic layer (e.g. a Co alloy) and a protective overcoat (e.g. by hydrogenated carbon).

Abstract: High resistivity chromium silicide coatings that are chemically, physically, and electrically stable at high temperatures are provided. The coatings are applied to substrates, optionally over a barrier layer of dielectric. The coatings are deposited in a magnetron sputtering process involving sputtering of a CrSi.sub.2 target in the presence of a gaseous mixture that includes nitrogen. The coatings so provided typically have resistivities on the order of 100 to 20,000 ohms per square. The degree of nitrogen incorporation varies with the thickness of the chromium silicide to give selected ranges of stable products.