Abstract: Provided is an RF power harvesting circuit with improved sensitivity to RF energy. The RF power harvesting device includes an inductor, a first capacitor connected to the inductor, a first MOSFET connected to a first node, and a second MOSFET connected to the first node. The inductor or the first capacitor are connected to the first node.

Abstract: This invention pertains to electronic/optoelectronic devices with reduced extended defects and to a method for making it. The method includes the steps of depositing a dielectric thin film mask material on a semiconductor substrate surface; patterning the mask material to form openings therein extending to the substrate surface; growing active material in the openings; removing the mask material to form the device with reduced extended defect density; and depositing electrical contacts on the device.

Abstract: This invention pertains to electronic/optoelectronic devices with reduced extended defects and to a method for making it. The device includes a substrate, a semiconductor active material deposited on said substrate, and electrical contacts. The semiconductor active material defines raised structures having atomically smooth surfaces. The method includes the steps of depositing a dielectric thin film mask material on a semiconductor substrate surface; patterning the mask material to form openings therein extending to the substrate surface; growing active material in the openings; removing the mask material to form the device with reduced extended defect density; and depositing electrical contacts on the device.

Abstract: An analog to digital converter includes a resistor-divider network including a plurality of resistors, an arbel channel circuit configured to generate a voltage sawtooth signal as an output, a dc-offset disposed to couple a node of the resistor-divider network and the arbel-channel circuit. The converter further includes a voltage reference circuit configured to generate a reference voltage, and a differential comparator configured to compare the voltage sawtooth signal with the reference voltage to produce a digital output signal corresponding to the voltage sawtooth signal. Method of converting an analog signal to a digital signal is also described.

Abstract: An analog to digital converter circuit includes an isolation circuit, an input circuit including a resistor chain, a plurality of fixed threshold comparators, and an encoder. The resistor chain includes a plurality of resistors connected in series, the isolation circuit being configured to isolate a device supplying the analog input signal from the input circuit. The isolation circuit is connected to the input circuit at a top node of the resistor chain, and wherein 2N values of the analog input voltage are connected to inputs of the fixed threshold comparators to produce corresponding output signals. Methods of converting an analog signal to a digital signal are also described.

Abstract: An analog to digital converter circuit includes an isolation circuit, an input circuit including a resistor chain, a plurality of fixed threshold comparators, and an encoder. The resistor chain includes a plurality of resistors connected in series, the isolation circuit being configured to isolate a device supplying the analog input signal from the input circuit. The isolation circuit is connected to the input circuit at a top node of the resistor chain, and wherein 2N values of the analog input voltage are connected to inputs of the fixed threshold comparators to produce corresponding output signals. Methods of converting an analog signal to a digital signal are also described.

Abstract: An analog to digital converter includes a resistor-divider network including a plurality of resistors, an arbel channel circuit configured to generate a voltage sawtooth signal as an output, a dc-offset disposed to couple a node of the resistor-divider network and the arbel-channel circuit. The converter further includes a voltage reference circuit configured to generate a reference voltage, and a differential comparator configured to compare the voltage sawtooth signal with the reference voltage to produce a digital output signal corresponding to the voltage sawtooth signal. Method of converting an analog signal to a digital signal is also described.

Abstract: This invention pertains to e lectronic/optoelectronic devices with reduced extended defects and to a method for making it. The method includes the steps of depositing a dielectric thin film mask material on a semiconductor substrate surface; patterning the mask material to form openings therein extending to the substrate surface; growing active material in the openings; removing the mask material to form the device with reduced extended defect density; and depositing electrical contacts on the device.

Abstract: Molecular recognition-based electronic sensor, which is gateless, depletion mode field effect transistor consisting of source and drain diffusions, a depletion-mode implant, and insulating layer chemically modified by immobilized molecular receptors that enables miniaturized label-free molecular detection amenable to high-density array formats. The conductivity of the active channel modulates current flow through the active channel when a voltage is applied between the source and drain diffusions. The conductivity of the active channel is determined by the potential of the sample solution in which the device is immersed and the device-solution interfacial capacitance. The conductivity of the active channel modulates current flow through the active channel when a voltage is applied between the source and drain diffusions. The interfacial capacitance is determined by the extent of occupancy of the immobilized receptor molecules by target molecules. Target molecules can be either charged or uncharged.

Abstract: Molecular recognition-based electronic sensor, which is gateless, depletion mode field effect transistor consisting of source and drain diffusions, a depletion-mode implant, and insulating layer chemically modified by immobilized molecular receptors that enables miniaturized label-free molecular detection amenable to high-density array formats. The conductivity of the active channel modulates current flow through the active channel when a voltage is applied between the source and drain diffusions. The conductivity of the active channel is determined by the potential of the sample solution in which the device is immersed and the device-solution interfacial capacitance. The conductivity of the active channel modulates current flow through the active channel when a voltage is applied between the source and drain diffusions. The interfacial capacitance is determined by the extent of occupancy of the immobilized receptor molecules by target molecules. Target molecules can be either charged or uncharged.

Abstract: A mask for ion beam lithography is made by coating a front side, sidewalls, nd a backside of a substrate with an insulating layer; opening, on the front side of the substrate, a window in the insulating layer to expose a front substrate surface; depositing an oxide membrane on the front substrate surface; opening a portion of the insulating material on the backside of the substrate to form an exposed backside of the substrate; forming a photoresist layer on the oxide membrane; patterning the photoresist layer; ion beam etching the oxide membrane through the patterned photoresist layer to completely remove selected portions of the oxide membrane and form a stenciled pattern in the oxide membrane; removing the patterned photoresist layer from the stenciled oxide membrane; removing, from the backside of the substrate, the exposed backside of the substrate to expose a backside of the stenciled pattern in the oxide membrane, thus leaving a stenciled oxide membrane, corresponding to the stenciled oxide pattern, hel

Abstract: An apparatus and method for aligning a mask and wafer in the fabrication of ntegrated circuits utilizing alignment patterns on the mask and wafer. Each alignment pattern comprises a plurality of parallel alignment marks which are spaced from one another such that the patterns may be superimposed so that the marks of one pattern are positioned between marks of the other pattern. When the patterns are misaligned, a moire pattern is produced which disappears on alignment. The marks of each pattern are also disparately spaced from one another, permitting a gross to fine alignment. In aligning the patterns, each mark of one pattern is positioned between pairs of marks of the other pattern in an order corresponding to the widths of spaces defined between marks of the other pattern, progressing from the largest space width, giving gross alignment, to the smallest, giving fine alignment.