Abstract: A timing circuit includes an input for receiving the control signal from a logic circuit operating with a first supply voltage and an output for supplying a control signal to a circuit operating with a second supply voltage different from the first supply voltage. The timing circuit also includes a plurality of delay elements connected in series between the input and output and supplied with the first supply voltage, and one or more NFET footer transistors that couple respective delay elements to a negative supply rail, the NFET footer transistors having the second supply voltage applied to their gates. A memory apparatus employing such a circuit is provided.

Abstract: A timing circuit includes an input for receiving the control signal from a logic circuit operating with a first supply voltage and an output for supplying a control signal to a circuit operating with a second supply voltage different from the first supply voltage. The timing circuit also includes a plurality of delay elements connected in series between the input and output and supplied with the first supply voltage, and one or more NFET footer transistors that couple respective delay elements to a negative supply rail, the NFET footer transistors having the second supply voltage applied to their gates. A memory apparatus employing such a circuit is provided.

Abstract: Apparatus and methods are provided for accessing memory elements. An exemplary memory element includes an array of memory cells and a control module. Each memory cell of the array is coupled to an access line, wherein the control module is configured to assert a first signal for a write duty cycle on the access line to enable writing to a first memory cell of the array of memory cells, and the control module is configured to assert a second signal for a read duty cycle on the access line to enable reading from the first memory cell. The write duty cycle and the read duty cycle are each selected from a plurality of possible duty cycles. In an exemplary embodiment, the read duty cycle and the write duty cycle are chosen to optimize a performance parameter for the memory element.