Patents by Inventor Martin Plouffe

Martin Plouffe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10353411
    Abstract: A power supply unit for use with thermostats or other like devices. The power supply unit may keep electromagnetic interference emissions and harmonics at a minimum. A unit may have enough power for triggering a switch at about a cross over point of a waveform of input power to the unit. Power for triggering may come from a storage source. Power for the storage source may be provided with power stealing which require switching transistors which can generate emissions. In-line thermostats using MOSFETS power steal may do the power steal during an ON state (triac, relay or silicon controlled rectifier activated). Gate signals to the transistors may be especially shaped to keep emissions from transistor switching at a minimum. All that may be needed, during an OFF state as a bypass, is a high voltage controllable switch. The need may be achieved using high voltage MOSFETS.
    Type: Grant
    Filed: February 14, 2017
    Date of Patent: July 16, 2019
    Assignee: Ademco Inc.
    Inventors: Daniel Tousignant, Martin Plouffe
  • Publication number: 20170153655
    Abstract: A power supply unit for use with thermostats or other like devices. The power supply unit may keep electromagnetic interference emissions and harmonics at a minimum. A unit may have enough power for triggering a switch at about a cross over point of a waveform of input power to the unit. Power for triggering may come from a storage source. Power for the storage source may be provided with power stealing which require switching transistors which can generate emissions. In-line thermostats using MOSFETS power steal may do the power steal during an ON state (triac, relay or silicon controlled rectifier activated). Gate signals to the transistors may be especially shaped to keep emissions from transistor switching at a minimum. All that may be needed, during an OFF state as a bypass, is a high voltage controllable switch. The need may be achieved using high voltage MOSFETS.
    Type: Application
    Filed: February 14, 2017
    Publication date: June 1, 2017
    Inventors: Daniel Tousignant, Martin Plouffe
  • Patent number: 9628074
    Abstract: A power supply unit for use with thermostats or other like devices. The power supply unit may keep electromagnetic interference emissions and harmonics at a minimum. A unit may have enough power for triggering a switch at about a cross over point of a waveform of input power to the unit. Power for triggering may come from a storage source. Power for the storage source may be provided with power stealing which require switching transistors which can generate emissions. In-line thermostats using MOSFETS power steal may do the power steal during an ON state (triac, relay or silicon controlled rectifier activated). Gate signals to the transistors may be especially shaped to keep emissions from transistor switching at a minimum. All that may be needed, during an OFF state as a bypass, is a high voltage controllable switch. The need may be achieved using high voltage MOSFETS.
    Type: Grant
    Filed: June 19, 2014
    Date of Patent: April 18, 2017
    Assignee: Honeywell International Inc.
    Inventors: Daniel Tousignant, Martin Plouffe
  • Publication number: 20150370268
    Abstract: A power supply unit for use with thermostats or other like devices. The power supply unit may keep electromagnetic interference emissions and harmonics at a minimum. A unit may have enough power for triggering a switch at about a cross over point of a waveform of input power to the unit. Power for triggering may come from a storage source. Power for the storage source may be provided with power stealing which require switching transistors which can generate emissions. In-line thermostats using MOSFETS power steal may do the power steal during an ON state (triac, relay or silicon controlled rectifier activated). Gate signals to the transistors may be especially shaped to keep emissions from transistor switching at a minimum. All that may be needed, during an OFF state as a bypass, is a high voltage controllable switch. The need may be achieved using high voltage MOSFETS.
    Type: Application
    Filed: June 19, 2014
    Publication date: December 24, 2015
    Inventors: Daniel Tousignant, Martin Plouffe