Abstract: An infrared emitter, which utilizes a photonic bandgap (PBG) structure to produce electromagnetic emissions with a narrow band of wavelengths, includes a semiconductor material layer, a dielectric material layer overlaying the semiconductor material layer, and a metallic material layer having an inner side overlaying the dielectric material layer. The semiconductor material layer is capable of being coupled to an energy source for introducing energy to the semiconductor material layer. An array of holes are defined in the device in a periodic manner, wherein each hole extends at least partially through the metallic material layer. The three material layers are adapted to transfer energy from the semiconductor material layer to the outer side of the metallic material layer and emit electromagnetic energy in a narrow band of wavelengths from the outer side of the metallic material layer.

Abstract: An infrared emitter, which utilizes a photonic crystal (PC) structure to produce electromagnetic emissions with a narrow band of wavelengths, includes a semiconductor material layer, a dielectric material layer overlaying the semiconductor material layer, and a metallic material layer having an inner side overlaying the dielectric material layer. The semiconductor material layer is capable of being coupled to an energy source for introducing energy to the semiconductor material layer. An array of surface features are defined in the device in a periodic manner or quasi-periodic. The emitter device is adapted to emit electromagnetic energy having spectral characteristics determined by parameters of the periodically distributed surface features, the parameters including shape, size, depth, distribution geometry, periodicity, material properties and defects.