Abstract: Methods for determining parameters of a semiconductor material, for example, non-classical substrates such as silicon-on-insulator (SOI) substrates, strained silicon-on-insulator (sSOI) substrates, silicon-germanium-on-insulator (GeOI) substrates, and strained silicon-germanium-on-insulator (sGeOI) substrates are described. The method provides steps for transforming data corresponding to the semiconductor material from real space to reciprocal space. The critical points are isolated in the reciprocal state and corresponding critical energies of the critical points are determined. The difference between the critical energies may be used to determine a thickness of a layer of the semiconductor material, in particular, a quantum confined layer.

Abstract: A system and method where a client creates a basket of intended stock orders, slices the basket into one or more waves of orders, sends trade orders to a broker/dealer for execution, and allocates stocks to one or more client accounts. A backend server receives basket or wave orders, breaks each basket or wave order into individual stock orders, and queues the individual stock orders for submission to an order management system for execution of the order. A market data feed to the client continuously updates the information displayed to the client. The client may strike a basket or wave or individual stock by entering strike information into a client database residing on a client computer. The system also provides for allocation of executed trades to client-specified accounts.

Abstract: Methods and systems for determining a charge trap density between a semiconductor material and a dielectric material are disclosed. In one respect, spectroscopic data of the semiconductor material may be determined and used to determine a change in dielectric function. A line shape fit of the change in the dielectric function may be applied using derivative function form. The amplitude of the line shape fit may be determined and used to determine an electric field of a space charge region of the semiconductor material. By applying Poisson's equations, the scalar potential due to the electric field in the space charge region may be determined. Subsequently, using the scalar potential the charge trap density may be determined.

Abstract: Methods for determining parameters of a semiconductor material, in particular non-classical substrates such as silicon-on-insulator (SOI) substrates, strained silicon-on-insulator (sSOI) substrates, silicon-germanium-on-insulator (GOI) substrates, and strained silicon-germanium-on-insulator (sGeOI) substrates. The method provides steps for transforming data corresponding to the semiconductor material from real space to reciprocal space. The critical points are isolated in the reciprocal state and corresponding critical energies of the critical points are determined. The difference between the critical energies may be used to determine a thickness of a layer of the semiconductor material, in particular, a quantum confined layer.

Abstract: A bandscreen comprising a pair of spaced-apart, endless drive chains (4,5), a plurality of spaced-apart screen-supporting members (18) each spanning between the drive chains, and a plurality of screens (10) each of which is held in position by being engaged with, but not attached to, a respective pair of the screen-supporting members (8), only.

Abstract: Methods for characterizing a semiconductor material using optical metrology are disclosed. In one respect, a electromagnetic radiation source may be directed in a direction substantially parallel to patterns on a semiconductor material. A polarized spectroscopic reflectivity may be obtained, and a critical point data may be determined. Using the critical point data, physical dimensions of the patterns may be determined. In other respects, using optical metrology techniques, a critical point data relating to electron mobility may be determined.

Abstract: A method and system for pacing online advertisement deliveries are disclosed. According to one aspect of the invention, the present invention overcomes the problems in the existing art described above by providing a method and system for pacing the delivery of online advertisements. In one embodiment, a method, that is to be implemented on a system, is provided to identify a rate at which billable events for an online advertisement occur; and adjust at least one of a pace the online advertisement is served, or an amount charged for the advertisement being selected, based on the rate the online advertisement is selected and a budget limit.

Abstract: Methods and systems for determining a charge trap density between a semiconductor material and a dielectric material are disclosed. In one respect, spectroscopic data of the semiconductor material may be determined and used to determine a change in dielectric function. A line shape fit of the change in the dielectric function may be applied using derivative function form. The amplitude of the line shape fit may be determined and used to determine an electric field of a space charge region of the semiconductor material. By applying Poisson's equations, the scalar potential due to the electric field in the space charge region may be determined. Subsequently, using the scalar potential the charge trap density may be determined.

Abstract: A low-cost CPAP apparatus in which, upon detection of the transition from inhalation to exhalation, the blower motor is de-energized to allow it to freewheel. When the pressure in the patient mask (or whatever interface is utilized) reaches a minimum pressure level during exhalation, the motor is re-energized and its speed is controlled so to maintain the pressure at a level suitable for exhalation. Upon detection of the transition from exhalation to inhalation, the motor speed is increased to provide higher pressures in the patient mask suitable for inhalation.