Abstract: A novel treatment method is disclosed, wherein a patch configured to be placed on a patient's skin is activated, before placement, to deliver localized radiotherapy to a diseased area of the skin. The disclosed devices and methods minimize or prevent collateral damage to the neighboring tissues. In most cases, the disclosed devices and methods include coating a contoured, solid, flexible or conformal substrate with one or more lanthanide elements and then activating (e.g. neutron irradiation) the elements such that its resulting radioisotope emits beta-particles into the diseased skin surface when applied to the patient's skin. Novel processes are described for fabricating and irradiating the lanthanide-based skin patch, for example a holmium-based skin patch.

Abstract: The invention provides new heterocyclic compounds having the general formula (I) wherein A, L, X, m, n, R1 and R2 are as described herein, compositions including the compounds, processes of manufacturing the compounds and methods of using the compounds.

Abstract: A spreader unit for a drum brake is provided with a readjustment device which ensures that the clearance remains substantially constant even in the case of wear on the brake linings. The readjustment device is arranged between actuating pistons and changes the spacing of the actuating pistons in at least one readjustment step when an actuating travel of the first and second brake shoe holders has exceeded a travel setpoint value. A thermally actuable blocking device mechanically prevents the execution of the readjustment step by the readjustment device at a temperature above a temperature setpoint value.

Abstract: An optical device includes a beam-forming element made of a first material with a base surface and a top surface, which are opposite one another, and with a surrounding lateral surface, which connects the base surface and the top surface to one another. The optical device includes a support body made of a second material, which is formed with a receptacle for the beam-forming element and has at least one common contact surface with the lateral surface. The first material and the second material are in direct contact with each other. The first material is permeable to, and the second material is absorbent to, a defined electromagnetic radiation. A defined refractive index (n2) of the second material is set in a defined ratio to a defined refractive index (n1) of the first material in order to set a specific transition characteristic for the defined electromagnetic radiation at the contact surface.

Abstract: A phantom is suitable for registration of a plurality of modalities of a multimodality imaging system. The phantom comprises a plurality of markers, which are embedded in a holding structure. The plurality of markers can be placed in a vertical drilling of the holding structure. Furthermore, the plurality of markers may be arranged in the form of a helix. The markers may be placed in drillings of the holding structure, wherein the direction of the drillings is perpendicular to the axis of the helix.

Abstract: An electrostatic discharge (ESD), protection device is provided. In accordance with the present disclosure, an ESD protection device is provided that includes a series connection of a first unit having strong snapback and low series capacitance and a second high-voltage unit that displays a relatively high holding/trigger voltage to ensure latch up and improper triggering of the ESD protection device while at the same time providing high-voltage operation with low capacitive loading.

Abstract: A discharge protection semiconductor structure is provided that includes a substrate, a well positioned on the substrate, a first contact diffusion and a second contact diffusion, the first contact diffusion and the second contact diffusion positioned on the top side of the well, and a resistor positioned between the first contact diffusion and a second contact diffusion.

Abstract: A dual silicone no-lead (DSN), semiconductor device package is provided, the bond pad to the terminal includes an additional area in the second metallization layer, which is rectangularly shaped and extends from one side, e.g., the middle, of the terminal towards a location above the semiconductor device.

Abstract: The invention provides new MAGL inhibitors having the general formula (I) wherein the variables are as described herein, compositions including the compounds, processes of manufacturing the compounds and methods of using the compounds.

Abstract: The invention provides new heterocyclic compounds having the general formula (I) wherein A, B, X, and R1 to R7 are as described herein, compositions including the compounds, processes of manufacturing the compounds and methods of using the compounds.

Abstract: A semiconductor device is provided, more particularly, a semiconductor controlled rectifier device (SCR) device, which achieves low capacitance, low trigger voltage, fast turn-on, and low on-resistance. Additionally, the semiconductor controlled rectifier device (SCR) device can achieve low capacitance, low trigger voltage, fast turn-on, and low on-resistance at the same time.

Abstract: A current-controlled semiconductor system is provided, including a signal and a ground line, and a semiconductor controlled rectifier (SCR) device including a first SCR layer doped with a first type of charge carriers; a second SCR layer doped with a second type different from the first type; a third SCR layer doped with the first type; a fourth SCR layer doped with the second type; an input terminal connected with the first SCR layer and the signal line and an output terminal connected with the fourth SCR layer and ground line; at least a first SCR junction element connected with the second SCR layer and the signal line, and/or a second SCR junction element connected with the third SCR layer and the ground line, the system includes at least one current trigger device connecting the signal line with the third SCR layer or the ground line with second SCR layer.

Abstract: The invention provides new heterocyclic compounds having the general formula (I) wherein B, C, L, X, Y, RL and R3 to R5 are as described herein, compositions including the compounds, processes of manufacturing the compounds and methods of using the compounds.

Abstract: A semiconductor device is provided that includes a first n+ region, a first p+ region within the first n+ region, a second n+ region, a second p+ region, positioned between the first n+ region and the second n+ region. The first n+ region, the second n+ region and the second p+ region are positioned within a p? region. A first space charge region and a second space charge region are formed within the p? region. The first space region is positioned between the first n+ region and the second p+ region, and the second space region is positioned between the second p+ region and the second n+ region.

Abstract: The invention provides new heterocyclic compounds having the general formula (I) wherein A, L, X, m, n, R1 and R2 are as described herein, compositions including the compounds, processes of manufacturing the compounds and methods of using the compounds.

Abstract: The invention provides new heterocyclic compounds having the general formula (I) wherein A, B, L1, X, m, n, and R1 to R7 are as described herein, compositions including the compounds, processes of manufacturing the compounds and methods of using the compounds.

Abstract: The invention provides new heterocyclic compounds having the general formula (I) wherein A, L, X, m, n, R1 and R2 are as described herein, compositions including the compounds, processes of manufacturing the compounds and methods of using the compounds.

Abstract: An electrostatic discharge (ESD), protection device is provided. In accordance with the present disclosure, an ESD protection device is provided that includes a series connection of a first unit having strong snapback and low series capacitance and a second high-voltage unit that displays a relatively high holding/trigger voltage to ensure latch up and improper triggering of the ESD protection device while at the same time providing high-voltage operation with low capacitive loading.

Abstract: This disclosure relates to a semiconductor device including a device with high clamping voltage (HVC device), and an OTS device. Such a semiconductor device provides very advantageous ESD protection. The semiconductor device can be realized in two ways: an OTS device and a device with high clamping voltage can be realized as discrete, independent devices that are combined in one semiconductor package, or an OTS device can be integrated into interconnect layers of a device with high clamping voltage by integration.

Abstract: A semiconductor device including an interconnect. The interconnect is arranged to transfer current from one terminal to another, and the interconnect includes a first layer including a plurality of interweaved fingers, and each of the interweaved fingers varies in width in a direction of propagation current thereby resulting in a difference of resistance within each of the interweaved fingers in the direction of propagation of current; a second layer arranged below the first layer. The second layer compensates for the difference of resistance in the first layer.