Abstract: An integrated circuit device provides electrostatic discharge (ESD) protection. In connection with various example embodiments, an ESD protection circuit includes a diode-type circuit having a p-n junction that exhibits a low breakdown voltage. Connected in series with the diode between an internal node susceptible to an ESD pulse and ground, are regions of opposite polarity having junctions therebetween for mitigating the passage of leakage current via voltage sharing with the diode's junction. Upon reaching the breakdown voltage, the diode shunts current to ground via another substrate region, bypassing one or more junctions of the regions of opposite polarity and facilitating a low clamping voltage.

Abstract: An integrated circuit device provides electrostatic discharge (ESD) protection. In connection with various example embodiments, an ESD circuit includes a low voltage clamp circuit configured to discharge current during an ESD event in response to a voltage level presented thereto, and is coupled across an internal node (e.g., a floating circuit node or a voltage supply (VDD)) and ground, in parallel with an input node having a diode between the input node and each of the internal node and ground. The clamp circuit includes a silicon-controlled rectifier (SCR) including a thyristor having anode and cathode end regions separated by two base regions, the cathode being connected to the internal node and the anode being connected to ground.

Abstract: The present invention relates to an electrical connector for a first IC, comprising a second IC (12) carrying ESD protection, the second IC (12) being integrated into the connector (8), which enhances the ESD protection and preserves the RF performance of such connector (8). The present invention further relates to a method for making an electrical connector (8) for a first IC, comprising this step of providing ESD protection to the first IC by integrating a second IC (12) carrying ESD-protection into the connector (8).

Abstract: The present invention relates to a discharge structure for an overvoltage and/or overcurrent protection, in particular to a discharge structure for an electrostatic discharge (ESD) protection, for an integrated circuit (IC), and to an ESD protection device for an IC comprising such a discharge structure and to a method for making such a structure. The present invention particularly relates to such a discharge structure (50, 52) which comprises at least two discharge paths (40, 80) provided to conduct a current to a terminal (60), whereas substantially all of the discharge paths (40, 80) present substantially the same resistance for the current.

Abstract: Devices, methods and programmed instructions useful for transferring one or more telephony functions associated with a wireless handheld telephony device to a second telephony device are disclosed. The wireless handheld telephony device provides information useful in transferring the one or more telephony functions to the second telephony device.

Abstract: Devices, methods, and programmed instructions useful for transferring an end of an existing call session from a wireless handheld telephony device to a second device, such as a desk phone. The second device provides information useful for transferring the call directly to the handheld device on which the call session is established.

Abstract: A computer-implemented system may include a data store to store business data, an application platform, and a business application. The application platform may include a repository to store metadata defining a plurality of business objects, each of the business objects comprising a respective model of data and associated logic, each business object associated with respective business object entities, and a framework in communication with the repository to provide access to the business data. The business application is to access the data via the framework and based on the metadata, wherein the metadata associates a first plurality of the business object entities with a RELEASED release status code, and wherein the metadata associates a second plurality of the business object entities with a DEPRECATED release status code.

Abstract: The present invention relates to an electrical connector for a first IC, comprising a second IC (12) carrying ESD protection, the second IC (12) being integrated into the connector (8), which enhances the ESD protection and preserves the RF performance of such connector (8). The present invention further relates to a method for making an electrical connector (8) for a first IC, comprising this step of providing ESD protection to the first IC by integrating a second IC (12) carrying ESD-protection into the connector (8).

Abstract: A computer-implemented system may include an application platform comprising a platform model of a plurality of business objects, each of the business objects comprising a model of data and associated logic, and a public solution model comprising a subset of the platform model. The system may also include a business application, wherein a data model and access logic of the business application are defined based on the public solution model, and wherein the application platform is to provide services to the business application based on the data model, the access logic and the platform model.

Abstract: Systems and methods are described that permit a user to configure an identification strategy at run time to facilitate user input of data. The identification strategy may include a parsing grammar and a search algorithm. The parsing grammar may be used to parse user input, and the search algorithm may be used to search a database for the user input. A configuring user may configure the parsing grammar at run time to accept data in a customized form to suit the user's input style. The search algorithm may be configured accordingly as well.

Abstract: A monolithically integrated punch-through diode with a Schottky-like behavior. This is achieved as a Schottky-metal area (16) is deposited onto at least part of the first p-doped well's (9) surface. The Schottky-metal area (16) and the p-doped well (9) form the metal-semiconductor-transition of a Schottky-diode. The overvoltage protection of the inventive PT-diode is improved as the forward characteristic has a voltage drop that is less than 0.5V.

Abstract: It is described an Electro Static Discharge protection, wherein diodes are arranged on two electric paths both extending in between two conductors which are connected with input terminals of an ESD sensitive electronic component. Each path comprises two diodes arranged in series and with opposite polarity with respect to each other. At least one of the totally four diodes comprises a different reverse breakdown voltage. The protection circuit is formed integrally with the ESD sensitive electronic component. Due to the serial connection of two diodes in each path the corresponding ESD protection circuit comprises an extremely low capacitance.

Abstract: Systems and methods are described that permit a user to configure an identification strategy at run time to facilitate user input of data. The identification strategy may include a parsing grammar and a search algorithm. The parsing grammar may be used to parse user input, and the search algorithm may be used to search a database for the user input. A configuring user may configure the parsing grammar at run time to accept data in a customized form to suit the user's input style. The search algorithm may be configured accordingly as well.

Abstract: Consistent with an example embodiment, in integrated circuit chip includes an electrostatic discharge (ESD) protection device. A feature of the ESD protection device includes a pair of spaced center and circumferential electrodes, the center electrode being formed by the first electrically conductive layer and the circumferential electrode being formed by the second electrically conductive layer, said electrodes being separated by a steroidal spark gap cavity.

Abstract: A monolithically integrated punch-through diode with a Schottky-like behavior. This is achieved as a Schottky-metal area (16) is deposited onto at least part of the first p-doped well's (9) surface. The Schottky-metal area (16) and the p-doped well (9) form the metal-semiconductor-transition of a Schottky-diode. The overvoltage protection of the inventive PT-diode is improved as the forward characteristic has a voltage drop that is less than 0.5V.

Abstract: A receiver for radio or television signals provided with a high-frequency circuit having a discrete semiconductor component which includes a planar variable capacitance diode and an integrated series resistor formed on a common semiconductor or substrate. The receiver has lower parasitic capacitance and improved data reception, resulting in an increase of the Q factor of the variable capacitance diode and an increase in the circuit performance. The overall circuit loss is also reduced.

Abstract: A receiver for radio or television signals provided with a high-frequency circuit comprising a discrete semiconductor component which includes a planar variable capacitance diode formed on a semiconductor substrate of a first doping type with a first doping density n1, on which semiconductor substrate an epitaxial layer of the same doping type with a second doping density n2>n1 is provided, on which epitaxial layer an insulation layer having a first window is provided by means of a first laterally bounded semiconductor region of a second doping type with a doping density n3>n2 in the epitaxial layer below the first window, and a first contact pad which contacts the first laterally bounded semiconductor region via the first window,

Abstract: The invention relates to a method for accommodating an airbag of an airbag apparatus into a container. The folding method employed allows the airbag to folded into a small container, yet ensures that the airbag will inflate in a substantially uniform and jerk-free manner. The method is still fairly cost effective. A preferred embodiment encompasses inserting a first plunger into an opening in a lower half of the airbag such that it pushes the upper part away from the lower part. The upper part is then clamped between the first plunger and a second plunger. Next, the airbag is folded upward such that a plurality of radial folds is created, which are then folded inward. A hollow die is then placed over the folded airbag. The upper end of the airbag and a central portion of the airbag are twisted in different directions while a third plunger is placed over the end face of the folded airbag. The third plunger is then used to compress the airbag.

Abstract: An improved airbag arrangement in motor vehicles is described having at least one gas generator, a generator carrier, a folded together gas bag having at least one opening which receives the gas generator and a pot-like cover which accommodates the folded together gas bag, with the base of the pot-like cover being capable of being broken open by means of the gas bag expanded by the gas generator and with the marginal region of the cover remote from the base being connected to the generator carrier.

Abstract: An improved airbag arrangement in motor vehicles is described having at least one gas generator, a generator carrier, a folded together gas bag having at least one opening which receives the gas generator and a pot-like cover which accommodates the folded together gas bag, with the base of the pot-like cover being capable of being broken open by means of the gas bag expanded by the gas generator and with the marginal region of the cover remote from the base being connected to the generator carrier.