Abstract: An apparatus and a method for analysis of processing of a semiconductor wafer is disclosed which comprises gathering a plurality of items of processing data, applying at least one process model to the at least some of the plurality of items of processing data to derive at least one set of process results, comparing at least some of the derived sets of process results or at least some of the plurality of items of processing data with a process window, and outputting a set of comparison results based on the comparison of the derived sets of process results or the plurality of items of processing data with the process window.

Abstract: A method and apparatus for evaluating and controlling a semiconductor manufacturing process having a plurality of process steps in a process flow is described. The method comprises retrieving measurements of process step parameters from a process measurement database. The process step parameters comprise at least one of process step measurement data, process step context data or process step control data. The process step parameters are subsequently associated with one or more of the process steps.

Abstract: A method of manufacturing semiconductor devices includes defining a sampling plan that contains position information about metrology sites on process wafers. A first property of the process wafers is measured to obtain measurement values at measurement points, wherein a quantity of the measurement points per process wafer is at least tenfold a quantity of the metrology sites. A sampling model that includes at least a wafer model is updated on the basis of the measurement values. The sampling plan is updated on the basis of an assessment of deviations of the measurement values from a current sampling model.

Abstract: An apparatus and a method for analysis of processing of a semiconductor wafer is disclosed which comprises gathering a plurality of items of processing data, applying at least one process model to the at least some of the plurality of items of processing data to derive at least one set of process results, comparing at least some of the derived sets of process results or at least some of the plurality of items of processing data with a process window, and outputting a set of comparison results based on the comparison of the derived sets of process results or the plurality of items of processing data with the process window.

Abstract: An apparatus and a method for analysis of processing of a semiconductor wafer is disclosed which comprises gathering a plurality of items of processing data, applying at least one process model to the at least some of the plurality of items of processing data to derive at least one set of process results, comparing at least some of the derived sets of process results or at least some of the plurality of items of processing data with a process window, and outputting a set of comparison results based on the comparison of the derived sets of process results or the plurality of items of processing data with the process window.

Abstract: A method of manufacturing semiconductor devices includes defining a sampling plan that contains position information about metrology sites on process wafers. A first property of the process wafers is measured to obtain measurement values at measurement points, wherein a quantity of the measurement points per process wafer is at least tenfold a quantity of the metrology sites. A sampling model that includes at least a wafer model is updated on the basis of the measurement values. The sampling plan is updated on the basis of an assessment of deviations of the measurement values from a current sampling model.

Abstract: A method operates a continuous annealing line for the processing of a rolled good, in particular a metal strip. A property of the rolled good in relation to a point or a section of the rolled good is fed to a computer-aided model as an input variable. The point or the section of the rolled good is located before or in the continuous annealing line. For the purpose of precise control of the continuous annealing process, at least one material property of the rolled good after the continuous annealing process is simulated by the computer-aided model and compared with a specified target value. If the simulated material property deviates from the target value, at least one process variable of the continuous annealing process is controlled as long as the point or the section of the rolled good is located before or in the continuous annealing line.

Abstract: A method and apparatus for evaluating and controlling a semiconductor manufacturing process having a plurality of process steps in a process flow is described. The method comprises retrieving measurements of process step parameters from a process measurement database. The process step parameters comprise at least one of process step measurement data, process step context data or process step control data. The process step parameters are subsequently associated with one or more of the process steps.

Abstract: An apparatus and a method for analysis of processing of a semiconductor wafer is disclosed which comprises gathering a plurality of items of processing data, applying at least one process model to the at least some of the plurality of items of processing data to derive at least one set of process results, comparing at least some of the derived sets of process results or at least some of the plurality of items of processing data with a process window, and outputting a set of comparison results based on the comparison of the derived sets of process results or the plurality of items of processing data with the process window.

Abstract: Monitoring a first system of a technical plant for producing a product is performed by feeding first input data into a first logic unit; evaluating the first input data by the first logic unit; outputting first output data by the first logic unit, the output data characterizing a first status of the first system monitored. To improve known concepts for status monitoring, the first input data includes—first sensor data provided by the first sensors located in the plant, first data calculated by a first process model, the first process model mapping a first process in the plant, or first automation data of a first function of a first automation system in the plant; first design data characterizing physical variables of the first system and/or the plant, first parameterization data variable and predefinable relating to the first system and or the plant, and operating data characterizing production of the product.

Abstract: A cleaning device and method remove a lubricant from the rolls of a roll stand. To achieve economical and efficient cleaning of the rolls, the cleaning device includes at least one ultrasonic generator for generating ultrasonic waves, the ultrasonic waves being routed to the surface of the rolls by cleaning water; and a supply line for the cleaning water. The supply line is a branch of a cooling water circuit for the roll stand, enabling the water consumption for the roll stand to be kept constant during the cleaning phase. The water is merely redistributed in that a portion of the cooling water is supplied to the cleaning device. This creates the advantage of the roll temperature rising slightly, with the result that the cleaning performance is supported by the higher roll temperature at which the lubricant is better released from the surface of the roll.

Abstract: A method operates a continuous annealing line for the processing of a rolled good, in particular a metal strip. A property of the rolled good in relation to a point or a section of the rolled good is fed to a computer-aided model as an input variable. The point or the section of the rolled good is located before or in the continuous annealing line. For the purpose of precise control of the continuous annealing process, at least one material property of the rolled good after the continuous annealing process is simulated by the computer-aided model and compared with a specified target value. If the simulated material property deviates from the target value, at least one process variable of the continuous annealing process is controlled as long as the point or the section of the rolled good is located before or in the continuous annealing line.

Abstract: Semiconductor device with a first structure comprising a plurality of at least in part parallel linear structures, a second structure comprising a plurality of pad structures, forming at least in part one of the group of linear structure, curved structure, piecewise linear structure and piecewise curved structure which is positioned at an angle to the first structure, and the plurality of pad structures are intersecting at least one of the linear structures in the first structure. An electronic device with at least one semiconductor device, methods for manufacturing a semiconductor device and a mask system are also covered.

Abstract: A method of manufacturing an integrated circuit and an interconnection structure includes forming a conductive portion along a first direction and conductive lines along a second direction.

Abstract: Semiconductor device with a first structure comprising a plurality of at least in part parallel linear structures, a second structure comprising a plurality of pad structures, forming at least in part one of the group of linear structure, curved structure, piecewise linear structure and piecewise curved structure which is positioned at an angle to the first structure, and the plurality of pad structures are intersecting at least one of the linear structures in the first structure. An electronic device with at least one semiconductor device, methods for manufacturing a semiconductor device and a mask system are also covered.

Abstract: A semiconductor substrate is provided. A plurality of first conductive lines is formed, followed by forming a plurality of second conductive lines above the first conductive lines. Memory cells are at least partially formed in the semiconductor substrate. Thereafter, at least one of the second conductive lines is removed, thereby forming an opened portion. A sacrificial material is filled into the opened portion and a first hardmask layer is provided. The first hardmask layer is patterned so as to form a pattern comprising lines and spaces, so that portions of the sacrificial material are uncovered. Thereafter, the uncovered portions of the sacrificial material are selectively etched, thereby forming contact openings. Finally, a conductive material is filled into the contact openings and a plurality of third conductive lines connected with the contact openings is provided.

Abstract: A hard mask layer stack for patterning a layer to be patterned includes a carbon layer disposed on top of the layer to be patterned, a first layer of a material selected from the group of SiO2 and SiON disposed on top of the carbon layer and a silicon layer disposed on top of the first layer. A method of patterning a layer to be patterned includes providing the above described hard mask layer stack on the layer to be patterned and patterning the silicon hard mask layer in accordance with a pattern to be formed in the layer that has to be patterned.

Abstract: A method of forming a semiconductor device includes patterning a layer stack to form single conductive lines and single landing pads. Patterning of the layer stack includes two lithographic exposures using a set of two different photomasks. The landing pads are arranged at on side of an array region defined by a plurality of conductive lines. A set of photomasks used in the method of forming a semiconductor device includes a first photomask including patterns corresponding to the conductive lines and a second photomask including patterns corresponding to the landing pads. A semiconductor device includes conductive lines and landing pads connected with corresponding ones of said conductive lines wherein the landing pads are arranged in a staggered fashion at one side of an array region defined by a plurality of conductive lines.

Abstract: The unevennesses of a chuck are measured at various positions and are stored, as discrepancies from an idealized plane, in a databank. The measured discrepancies are used to calculate corrections for the predetermined settings for the focus distance and/or the tilt of the chuck. These corrections are in each case used differently for adjusting the respective exposure of the exposure areas.

Abstract: Input parameters and technically possible parameter values associated therewith are selected, from which are obtained support point values and result values assigned thereto for the geometrical properties. At each support point value, the respective result value is assigned to the parameter value assigned to the respective support point value. A response surface is adapted to the result values in a total range of the assigned parameter values. This results in response values for which a minimum value and a maximum value are determined in subranges. A total interval is formed from the largest response value overall and the smallest response value overall. The total interval is divided into a given number of sub-intervals. For each of the sub-intervals, the individual probabilities are cumulated, which yields a total probability value for a respective sub-interval over all the value intervals.