Abstract: A steering device includes a steering housing configured to receive and/or to hold at least one steering component, the steering housing including at least one housing section that is made from synthetic material, and a sensor unit which is configured to detect at least one detection variable. The sensor unit is configured to detect a surface characteristic of the at least one steering component and/or to detect a foreign substance penetrating the steering housing. The sensor unit is connected in a bonded manner to the at least one housing section and is integrated and/or embedded at least to a large extent in the synthetic material of the at least one housing section.

Abstract: A thyristor arrangement includes a main thyristor, at least one auxiliary thyristor, a resistance device which electrically connects the auxiliary thyristor and the main thyristor to one another, and an optical triggering device for breakover triggering of the main thyristor via the auxiliary thyristor and the resistance device. The resistance device defines a time-dependent ohmic resistance in such a way that the value thereof is relatively large during a switch-on phase of the main thyristor and relatively small during a current-carrying phase of the main thyristor.

Abstract: A multichip configuration in which a plurality of semiconductor chips in a module are connected together in such a way that the voltage drop across internal gate resistors is minimized, in order in the event of a short circuit to prevent the short circuit current rising with the gate voltage.

Abstract: The thyristor is based on a semiconductor body with an anode-side base zone of the first conductivity type and one or more cathode-side base zones of the opposite, second conductivity type. Anode-side and cathode-side emitter zones are provided, and at least one region in the cathode-side base zone whose geometry gives it a reduced breakdown voltage as compared with the remaining regions in the cathode-side base zone and the edge of the semiconductor body. At the anode, below the region of reduced breakdown voltage, the thyristor has at least one recombination zone in which the free charge carriers have a reduced lifetime.

Abstract: A semiconductor body including a first surface, a second surface, and a base doping for electrical conductivity. A first doped region is on the first surface and a second doped is on the second surface. The two doped regions are doped with opposites signs for electrical conductivity. A contact is positioned on each of the two doped regions. Another region is within the semiconductor body and has an outer section in which the charge carrier concentration in the outer section is lower due to the reduction of the concentration of dopant in the first doped region and/or the increase of concentration of recombination centers in the outer section.

Abstract: A multichip configuration in which a plurality of semiconductor chips in a module are connected together in such a way that the voltage drop across internal gate resistors is minimized, in order in the event of a short circuit to prevent the short circuit current rising with the gate voltage.

Abstract: Given too great a dU/dt load of a thyristor, this can trigger in uncontrolled fashion in the region of the cathode surface. Since the plasma only propagates poorly there and the current density consequently reaches critical values very quickly, there is the risk of destruction of the thyristor due to local overheating. The proposed thyristor has a centrally placed BOD structure and a plurality of auxiliary thyristors (1.-5. AG) annularly surrounding the BOD structure. The resistance of the cathode-side base (8) is locally increased under the emitter region (11) allocated to the innermost auxiliary thyristor (1. AG). Since the width (L) and the sheet resistivity of this annular zone (15) critically influences the dU/dt loadability of the first auxiliary thyristor (1.