Abstract: Method of producing a thin film electroluminescent device by sputtering a first transparent electrode of indium tin oxide or tin oxide onto a glass substrate, sputtering a layer of insulating material, for example barium tantalate, over the transparent electrode, and then forming a phosphor layer of zinc sulfide with manganese as an activator on the layer of insulating material. To form the phosphor layer electrical energy is applied to a target containing elemental zinc in an atmosphere containing hydrogen sulfide and argon to cause sputtering therefrom. Elemental zinc reacts with the hydrogen sulfide to deposit a layer of zinc sulfide over the layer of insulating material. The manganese is cosputtered either from a separate target or from a single target incorporating both zinc and manganese.

Abstract: A process for making electroluminescent films and devices by sputtering. Zinc sulfide, manganese, and copper sputtering targets are arranged in a circular configuration. RF voltages, applied to the targets, cause sputtering of the target materials. A transparent substrate with a transparent electrode formed thereon is rotated beneath the sputtering targets. An electroluminescent film including the target materials is formed on the upper surface of the transparent electrode. Concentration of the target materials in the electroluminescent film can be controlled by controlling the rf voltages applied to the sputtering targets. An electroluminescent device is completed by depositing a second electrode on the upper surface of the electroluminescent film and applying a forming voltage between the electrodes.