Abstract: A measuring system (10) for measuring an imaging quality of an EUV lens (30) includes a diffractive test structure (26), a measurement light radiating device (16) which is configured to radiate measurement light (21) in the EUV wavelength range onto the test structure, a variation device (28) for varying at least one image-determining parameter of an imaging of the test structure that is effected by a lens, a detector (14) for recording an image stack including a plurality of images generated with different image-determining parameters being set, and an evaluation device (15) which is configured to determine the imaging quality of the lens from the image stack.

Abstract: A measuring system (10) for measuring an imaging quality of an EUV lens (30) includes a diffractive test structure (26), a measurement light radiating device (16) which is configured to radiate measurement light (21) in the EUV wavelength range onto the test structure, a variation device (28) for varying at least one image-determining parameter of an imaging of the test structure that is effected by a lens, a detector (14) for recording an image stack including a plurality of images generated with different image-determining parameters being set, and an evaluation device (15) which is configured to determine the imaging quality of the lens from the image stack.

Abstract: A device for the optical measurement of an optical system, in particular an optical imaging system, is provided. The device includes at least one test optics component arranged on an object side or an image side of the optical system. An immersion fluid is adjacent to at least one of the test optics components. A container for use in this device, a microlithography projection exposure machine equipped with this device, and a method which can be carried out with the aid of this device are also provided. The device and method provide for optical measurement of microlithography projection objectives with high numerical apertures by using wavefront detection with shearing or point diffraction interferometry, or a Moiré measuring technique.

Abstract: A device for the optical measurement of an optical system, in particular an optical imaging system, is provided. The device includes at least one test optics component arranged on an object side or an image side of the optical system. An immersion fluid is adjacent to at least one of the test optics components. A container for use in this device, a microlithography projection exposure machine equipped with this device, and a method which can be carried out with the aid of this device are also provided. The device and method provide for optical measurement of microlithography projection objectives with high numerical apertures by using wavefront detection with shearing or point diffraction interferometry, or a Moiré measuring technique.

Abstract: A device for the optical measurement of an optical system, in particular an optical imaging system, is provided. The device includes at least one test optics component arranged on an object side or an image side of the optical system. An immersion fluid is adjacent to at least one of the test optics components. A container for use in this device, a microlithography projection exposure machine equipped with this device, and a method which can be carried out with the aid of this device are also provided. The device and method provide for optical measurement of microlithography projection objectives with high numerical apertures by using wavefront detection with shearing or point diffraction interferometry, or a Moiré measuring technique.

Abstract: The disclosure relates to an optical apparatus including a light source that emits light in the form of light pulses having a pulse frequency, and including at least one optical element. The disclosure also relates to a projection exposure machine including a pulsed light source and a projection objective, and to a method for modifying the imaging behavior of such an apparatus, such as in a projection exposure machine.

Abstract: A device for the optical measurement of an optical system, in particular an optical imaging system, is provided. The device includes at least one test optics component arranged on an object side or an image side of the optical system. An immersion fluid is adjacent to at least one of the test optics components. A container for use in this device, a microlithography projection exposure machine equipped with this device, and a method which can be carried out with the aid of this device are also provided. The device and method provide for optical measurement of microlithography projection objectives with high numerical apertures by using wavefront detection with shearing or point diffraction interferometry, or a Moiré measuring technique.

Abstract: A device for the optical measurement of an optical system, in particular an optical imaging system, is provided. The device includes at least one test optics component arranged on an object side or an image side of the optical system. An immersion fluid is adjacent to at least one of the test optics components. A container for use in this device, a microlithography projection exposure machine equipped with this device, and a method which can be carried out with the aid of this device are also provided. The device and method provide for optical measurement of microlithography projection objectives with high numerical apertures by using wavefront detection with shearing or point diffraction interferometry, or a Moiré measuring technique.

Abstract: A method of optimizing an imaging performance of a projection exposure system is provided, wherein the projection exposure system includes an illumination optical system for illuminating a patterning structure and a projection optical system for imaging a region of the illuminated patterning structure onto a corresponding field. The method involves setting the field to a first exposure field, setting optical parameters of the projection exposure system to a first setting such that the imaging performance within the first exposure field is a first optimum performance, changing the field to a second exposure field, and changing the optical parameters to a second setting such that the imaging performance within the second exposure field is a second optimum performance.

Abstract: The disclosure relates to an optical apparatus including a light source that emits light in the form of light pulses having a pulse frequency, and including at least one optical element. The disclosure also relates to a projection exposure machine including a pulsed light source and a projection objective, and to a method for modifying the imaging behavior of such an apparatus, such as in a projection exposure machine.

Abstract: A device for the optical measurement of an optical system, in particular an optical imaging system, is provided. The device includes at least one test optics component arranged on an object side or an image side of the optical system. An immersion fluid is adjacent to at least one of the test optics components. A container for use in this device, a microlithography projection exposure machine equipped with this device, and a method which can be carried out with the aid of this device are also provided. The device and method provide for optical measurement of microlithography projection objectives with high numerical apertures by using wavefront detection with shearing or point diffraction interferometry, or a Moiré measuring technique.

Abstract: An integrated set of roof tiles comprises a main roof tile (12) of rectangular shape in plan, which is provided with interlocking side-lock portions (58,60) at opposite side edges thereof. The roof tile (12) also has a flat, bottomed channel (62) with sloping side walls (68,70), the channel (62) extending from a toe to head end of the main roof tile (12). The channel (62) has a widening towards the middle of its length. The set of roof tiles also comprises a ridge tile (2), which is substantially of half round configuration and is provided with a channel (24) having sloping side walls (30,32), the channel (24) extending over the ridge tile to continue the configuration of the main roof tiles (12). The ridge tiles (2) are also provided with protuberances (42) at lower edges that engage in use with upper faces of the topmost roof tiles (12) on either side of an apex (4) of a roof (6), which protuberances (42) define a ventilation opening (41) between the ridge tiles (2) and the topmost roof tiles (12).

Abstract: A measuring apparatus for optical, for example interferometric, measurement of an optical imaging system, imaging of a useful pattern in an imaging operation, including a device for production of radiation information, for example interference information, which is indicative of imaging errors, having a mask structure arrangement which contains a measurement pattern, and a device for detection and evaluation of the interference information which is indicative of imaging errors; also a method for operation of the optical imaging system including imaging error correction.

Abstract: Device and method for wavefront measurement of an optical imaging system by means of phase-shifting interferometry, having a mask structure (6a) to be arranged on the object side, and/or a grating structure (7a) to be arranged on the image side. The object-side mask structure includes one or more one-dimensional mask structure patterns, and the image-side grating structure includes one or more two-dimensional grating structure patterns. Alternatively, conversely, the mask structure includes one or more two-dimensional patterns, and the grating structure includes one or more one-dimensional patterns.

Abstract: A device for the optical measurement of an optical system, in particular an optical imaging system, is provided. The device includes at least one test optics component arranged on an object side or an image side of the optical system. An immersion fluid is adjacent to at least one of the test optics components. A container for use in this device, a microlithography projection exposure machine equipped with this device, and a method which can be carried out with the aid of this device are also provided. The device and method provide for optical measurement of microlithography projection objectives with high numerical apertures by using wavefront detection with shearing or point diffraction interferometry, or a Moiré measuring technique.

Abstract: An arrangement for microlithography includes a projection objective having a plurality of optical elements; an aberration control circuit controlling imaging properties of the projection objective; and at least one operating element associated with an optical element of the projection objective to control imaging properties of the projection objective in response to operating signals generated by the control circuit.

Abstract: A wavefront source having a wavefront formation structure (4a) and a diffuser with a scattering structure (2b) in the beam path in front of or at the level of the wavefront formation structure; also a diffuser configured to be used therefor, and a wavefront sensor equipped therewith, as well as a corresponding projection exposure apparatus. The diffuser has a diffractive computer-generated hologram (CGH) scattering structure with a predetermined angular scattering profile. The wavefront source includes such a diffuser and/or a focusing element with a reflecting diffractive focusing structure (3a) in the beam path at the level of the scattering structure or between the scattering structure (2b) and the wavefront formation structure (4a). The disclosed structures are used, e.g., in the wavefront measurement of projection objectives in microlithography projection exposure apparatuses in the EUV wavelength range.

Abstract: A device and a method for wavefront measurement of an optical system (7), in particular by an interferometric measurement technique. A dynamic range correction element (12, 12a) is arranged in the beam path upstream of the detector arrangement (11) and is designed such that the variation in the spatially dependent characteristic of a phase of the wavefront forming the interference pattern is kept below a prescribed limit value throughout a detection area. In addition or as an alternative, a set of several diffraction structures of different period length can be used with a shearing interferometry technique and/or a set of several pairs of a reference pinhole and a signal passage opening with different hole spacings can be used with a point diffraction interferometry technique for different sub-areas of the detection area. A remaining distortion error can be taken into account by determining a corresponding distortion transformation and applying the inverse distortion transformation.

Abstract: An apparatus for wavefront detection includes a wavefront source for the production of a wavefront, an optical system transforming the wavefront, a diffraction grating through which the transformed wavefront passes, and a spatially resolving detector following the diffraction grating. The wavefront source has a two-dimensional structure.

Abstract: 1. Method for patterning a substrate using multiple exposure. 2.1. The invention relates to a method for patterning a substrate using exposure processes of an adjustable optical system, a multiple exposure being used for producing a structure image on the substrate. 2.2. According to the invention, for at least one of the plurality of exposures, the imaging quality of the optical system is determined by means of a respective measurement step and at least one parameter of the optical system that influences the imaging quality is set depending on this. 2.3. Use e.g. for the patterning of semiconductor wafers in microlithography projection exposure apparatuses.