Patents by Inventor Martin Sporn
Martin Sporn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220417448Abstract: The invention relates to a system (1) for monitoring the surroundings of a motor vehicle (100), in particular an autonomous or semi-autonomous motor vehicle, wherein the system (1) includes at least one optical image capturing device (2) as well as further a lighting device (3, 4), wherein the optical image capturing device (2) is arranged for capturing an area of coverage (E1) of the surroundings, and wherein the area of coverage (E1) can be illuminated at least partially, preferably completely, by the lighting device (3, 4), and wherein the lighting device (3, 4) is arranged for generating a motor vehicle light distribution or part of a motor vehicle light distribution.Type: ApplicationFiled: December 7, 2020Publication date: December 29, 2022Inventors: Martin Brandstetter, Johann Altmann, Martin Sporn, Harald Bechmann, Ingeborg Bednar, Christian Jackl
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Patent number: 10325803Abstract: According to various embodiments, a semiconductor wafer may include: a semiconductor body including an integrated circuit structure; and at least one tetrahedral amorphous carbon layer formed at least one of over or in the integrated circuit structure, the at least one tetrahedral amorphous carbon layer may include a substance amount fraction of sp3-hybridized carbon of larger than approximately 0.4 and a substance amount fraction of hydrogen smaller than approximately 0.1.Type: GrantFiled: May 3, 2018Date of Patent: June 18, 2019Assignee: Infineon Technologies AGInventors: Matthias Kuenle, Gerhard Schmidt, Martin Sporn, Markus Kahn, Juergen Steinbrenner, Ravi Joshi
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Publication number: 20180247857Abstract: According to various embodiments, a semiconductor wafer may include: a semiconductor body including an integrated circuit structure; and at least one tetrahedral amorphous carbon layer formed at least one of over or in the integrated circuit structure, the at least one tetrahedral amorphous carbon layer may include a substance amount fraction of sp3-hybridized carbon of larger than approximately 0.4 and a substance amount fraction of hydrogen smaller than approximately 0.1.Type: ApplicationFiled: May 3, 2018Publication date: August 30, 2018Inventors: Matthias KUENLE, Gerhard SCHMIDT, Martin SPORN, Markus KAHN, Juergen STEINBRENNER, Ravi JOSHI
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Patent number: 9984915Abstract: According to various embodiments, a semiconductor wafer may include: a semiconductor body including an integrated circuit structure; and at least one tetrahedral amorphous carbon layer formed at least one of over or in the integrated circuit structure, the at least one tetrahedral amorphous carbon layer may include a substance amount fraction of sp3-hybridized carbon of larger than approximately 0.4 and a substance amount fraction of hydrogen smaller than approximately 0.1.Type: GrantFiled: May 30, 2014Date of Patent: May 29, 2018Assignee: Infineon Technologies AGInventors: Matthias Kuenle, Gerhard Schmidt, Martin Sporn, Markus Kahn, Juergen Steinbrenner, Ravi Joshi
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Patent number: 9824972Abstract: A method for a method of forming a semiconductor device includes providing a semiconductor substrate having a bottom surface opposite a top surface with circuitry disposed at the top surface. The method further includes forming a first metal layer having a first metal over the bottom surface of the semiconductor substrate. The first metal layer is formed by depositing an adhesion promoter followed by depositing the first metal.Type: GrantFiled: December 19, 2016Date of Patent: November 21, 2017Assignee: Infineon Technologies AGInventors: Mark James Harrison, Martin Sporn
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Publication number: 20170098614Abstract: A method for a method of forming a semiconductor device includes providing a semiconductor substrate having a bottom surface opposite a top surface with circuitry disposed at the top surface. The method further includes forming a first metal layer having a first metal over the bottom surface of the semiconductor substrate. The first metal layer is formed by depositing an adhesion promoter followed by depositing the first metal.Type: ApplicationFiled: December 19, 2016Publication date: April 6, 2017Inventors: Mark James Harrison, Martin Sporn
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Patent number: 9553016Abstract: A method for a method of forming a semiconductor device includes providing a semiconductor substrate having a bottom surface opposite a top surface with circuitry disposed at the top surface. The method further includes forming a first metal layer having a first metal over the bottom surface of the semiconductor substrate. The first metal layer is formed by depositing an adhesion promoter followed by depositing the first metal.Type: GrantFiled: July 7, 2014Date of Patent: January 24, 2017Assignee: Infineon Technologies AGInventors: Mark James Harrison, Martin Sporn
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Patent number: 9496193Abstract: A semiconductor chip includes a body having a frontside, a backside opposite the frontside, and sidewalls extending between the backside and frontside, at least a portion of each sidewall having a defined surface structure with hydrophobic characteristics to inhibit travel of a bonding material along the sidewalls during attachment of the semiconductor chip to a carrier with the bonding material.Type: GrantFiled: September 18, 2015Date of Patent: November 15, 2016Assignee: Infineon Technologies AGInventors: Michael Roesner, Gudrun Stranzl, Martin Zgaga, Martin Sporn, Tobias Schmidt
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Publication number: 20160005647Abstract: A method for a method of forming a semiconductor device includes providing a semiconductor substrate having a bottom surface opposite a top surface with circuitry disposed at the top surface. The method further includes forming a first metal layer having a first metal over the bottom surface of the semiconductor substrate. The first metal layer is formed by depositing an adhesion promoter followed by depositing the first metal.Type: ApplicationFiled: July 7, 2014Publication date: January 7, 2016Inventors: Mark James Harrison, Martin Sporn
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Publication number: 20150348824Abstract: According to various embodiments, a semiconductor wafer may include: a semiconductor body including an integrated circuit structure; and at least one tetrahedral amorphous carbon layer formed at least one of over or in the integrated circuit structure, the at least one tetrahedral amorphous carbon layer may include a substance amount fraction of sp3-hybridized carbon of larger than approximately 0.4 and a substance amount fraction of hydrogen smaller than approximately 0.1.Type: ApplicationFiled: May 30, 2014Publication date: December 3, 2015Applicant: Infineon Technologies AGInventors: Matthias Kuenle, Gerhard Schmidt, Martin Sporn, Markus Kahn, Juergen Steinbrenner, Ravi Joshi
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Patent number: 9006899Abstract: In one embodiment method, a first Ti based layer is deposited on the substrate. An intermediate Al based layer is deposited on the first layer, a second NiV based layer is deposited on the intermediate layer, and a third Ag based layer is deposited on the second layer. The layer stack is tempered in such a way that at least one inter-metallic phase is formed between at least two metals of the group containing Ti, Al, Ni and V.Type: GrantFiled: December 14, 2012Date of Patent: April 14, 2015Assignee: Infineon Technologies AGInventors: Paul Ganitzer, Kurt Matoy, Martin Sporn, Mark Harrison
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Publication number: 20140167270Abstract: In one embodiment method, a first Ti based layer is deposited on the substrate. An intermediate Al based layer is deposited on the first layer, a second NiV based layer is deposited on the intermediate layer, and a third Ag based layer is deposited on the second layer. The layer stack is tempered in such a way that at least one inter-metallic phase is formed between at least two metals of the group containing Ti, Al, Ni and V.Type: ApplicationFiled: December 14, 2012Publication date: June 19, 2014Applicant: INFINEON TECHNOLOGIES AGInventors: Paul Ganitzer, Kurt Matoy, Martin Sporn, Mark Harrison
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Patent number: 8710678Abstract: A device and method of making a device is disclosed. One embodiment provides a substrate. A semiconductor chip is provided having a first surface with a roughness of at least 100 nm. A diffusion soldering process is performed to join the first surface of the semiconductor chip to the substrate.Type: GrantFiled: July 3, 2012Date of Patent: April 29, 2014Assignee: Infineon Technologies AGInventors: Paul Ganitzer, Francisco Javier Santos Rodriguez, Martin Sporn, Daniel Kraft
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Publication number: 20120267770Abstract: A device and method of making a device is disclosed. One embodiment provides a substrate. A semiconductor chip is provided having a first surface with a roughness of at least 100 nm. A diffusion soldering process is performed to join the first surface of the semiconductor chip to the substrate.Type: ApplicationFiled: July 3, 2012Publication date: October 25, 2012Applicant: INFINEON TECHNOLOGIES AGInventors: Paul Ganitzer, Francisco Javier Santos Rodriguez, Martin Sporn, Daniel Kraft
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Patent number: 8211752Abstract: A device and method of making a device is disclosed. One embodiment provides a substrate. A semiconductor chip is provided having a first surface with a roughness of at least 100 nm. A diffusion soldering process is performed to join the first surface of the semiconductor chip to the substrate.Type: GrantFiled: November 26, 2007Date of Patent: July 3, 2012Assignee: Infineon Technologies AGInventors: Paul Ganitzer, Francisco Javier Santos Rodriguez, Martin Sporn, Daniel Kraft
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Publication number: 20090220777Abstract: According to an embodiment of the present invention, a sputter deposition method includes providing a sputter gas including krypton or xenon and accelerating ions of a plasma of the sputter gas towards a target material.Type: ApplicationFiled: March 3, 2008Publication date: September 3, 2009Inventor: Martin Sporn
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Publication number: 20090134501Abstract: A device and method of making a device is disclosed. One embodiment provides a substrate. A semiconductor chip is provided having a first surface with a roughness of at least 100 nm. A diffusion soldering process is performed to join the first surface of the semiconductor chip to the substrate.Type: ApplicationFiled: November 26, 2007Publication date: May 28, 2009Applicant: INFINEON TECHNOLOGIES AGInventors: Paul Ganitzer, Francisco Javier Santos Rodriguez, Martin Sporn, Daniel Kraft