Patents by Inventor Martin Steinbruck

Martin Steinbruck has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7113428
    Abstract: Prior to the reprogramming of a selected flash memory cell of a memory cell array, electrons being removed from the memory layer (M) in the channel region (C) by Fowler-Nordheim tunneling, a lower potential for incipient programming of the memory cell is applied to the relevant word line (WLn) while the associated bit line (BLm) remains at the basic potential. What is thereby achieved is that a gate disturb occurring during the programming operation does not lead to erratic bits along the affected word line (WLn).
    Type: Grant
    Filed: September 30, 2004
    Date of Patent: September 26, 2006
    Assignee: Infineon Technologies AG
    Inventors: Stefan Trost, Georg Tempel, Matthias Ernst, Martin Steinbrück
  • Publication number: 20050105353
    Abstract: Prior to the reprogramming of a selected flash memory cell of a memory cell array, electrons being removed from the memory layer (M) in the channel region (C) by Fowler-Nordheim tunneling, a lower potential for incipient programming of the memory cell is applied to the relevant word line (WLn) while the associated bit line (BLm) remains at the basic potential. What is thereby achieved is that a gate disturb occurring during the programming operation does not lead to erratic bits along the affected word line (WLn).
    Type: Application
    Filed: September 30, 2004
    Publication date: May 19, 2005
    Inventors: Stefan Trost, Georg Tempel, Matthias Ernst, Martin Steinbruck