Abstract: A method for producing an optoelectronic semiconductor component and an optoelectronic component are disclosed. In an embodiment a method includes providing an optoelectronic semiconductor chip comprising at least one light-emitting layer and at least one cavity and introducing at least one precursor of a conversion element in the at least one cavity, wherein the at least one conversion element comprises a perovskite-based ABX3 or A2BB?X6 structure.

Abstract: An optoelectronic semiconductor chip and a method for manufacturing a semiconductor chip are disclosed. In an embodiment an optoelectronic semiconductor chip includes a plurality of fins and a current expansion layer for common contacting of at least some of the fins, wherein each fin includes two side surfaces arranged opposite one another and an active region arranged on each of the side surfaces, wherein the plurality of fins include inner fins and outer fins having an adjacent fin only on one side, and wherein the current expansion layer is in direct contact with the inner fins on their outside.

Abstract: An optoelectronic arrangement having a radiation conversion element and a method for producing a radiation conversion element are disclosed. In an embodiment, an optoelectronic arrangement includes a semiconductor chip having an active region configured to generate radiation, a radiation conversion element arranged downstream of the semiconductor chip in an emission direction and a reflective polarization element arranged downstream of the radiation conversion element in the emission direction. The radiation conversion element has a plurality of conversion elements, each of which has an axis of symmetry, the spatial orientation of the axes of symmetry has a preferred direction and a radiation emitted by the radiation conversion element has a preferred polarization. The reflective polarization element largely allows radiation with the preferred polarization to pass through and largely reflects radiation polarized perpendicularly to the preferred polarization.

Abstract: An optoelectronic semiconductor chip and a method for manufacturing a semiconductor chip are disclosed. In an embodiment an optoelectronic semiconductor chip includes a plurality of fins and a current expansion layer for common contacting of at least some of the fins, wherein each fin includes two side surfaces arranged opposite one another and an active region arranged on each of the side surfaces, wherein the plurality of fins include inner fins and outer fins having an adjacent fin only on one side, and wherein the current expansion layer is in direct contact with the inner fins on their outside.

Abstract: The invention relates to an optoelectronic element comprising a semiconductor chip (12) that emits a blue-green light (4) during operation and has at least one light passage surface (12a) through which the blue-green light (4) emitted during operation passes and comprising a conversion element (3) which comprises fluorescent particles (31), in particular fluorescent particles of only one type, and which is arranged on the light passage surface (12a) at least in some areas. The fluorescent particles (31) at least partly convert the blue-green light (4) into a red light (5), and the optoelectronic element emits a white mixed light (6) which contains non-converted components of the blue-green light (4) and components of the red light (5).

Abstract: In at least one embodiment, the semiconductor layering sequence (1) is designed for generating light and comprises semiconductor columns (2). The semiconductor columns (2) have a respective core (21) made of a semiconductor material of a first conductivity type, and a core shell (23) surrounding the core (21) made of a semiconductor material of a second conductivity type. There is an active zone (22) between the core (21) and the core shell (23) for generating a primary radiation by means of electroluminescence. A respective conversion shell (4) is placed onto the semiconductor columns (2), which conversion shell at least partially interlockingly surrounds the corresponding core shell (23), and which at least partially absorbs the primary radiation and converts same into a secondary radiation of a longer wavelength by means of photoluminescence. The conversion shells (4) which are applied to adjacent semiconductor columns (2), only incompletely fill an intermediate space between the semiconductor columns (2).

Abstract: A laser diode arrangement comprising: at least one semiconductor substrate; at least two laser stacks based on the AlInGaN material system, each laser stack having an active zone, wherein at least one of the at least two laser stacks comprises a two-dimensional structure of laser diodes; and at least one intermediate layer. The laser stacks and the intermediate layer are grown monolithically on the semiconductor substrate. The intermediate layer is arranged between the laser stacks. The active zone of the first laser stack can be actuated separately from the active zone of the at least one further laser stack.

Abstract: The invention relates to an optoelectronic element comprising a semiconductor chip (12) that emits a blue-green light (4) during operation and has at least one light passage surface (12a) through which the blue-green light (4) emitted during operation passes and comprising a conversion element (3) which comprises fluorescent particles (31), in particular fluorescent particles of only one type, and which is arranged on the light passage surface (12a) at least in some areas. The fluorescent particles (31) at least partly convert the blue-green light (4) into a red light (5), and the optoelectronic element emits a white mixed light (6) which contains non-converted components of the blue-green light (4) and components of the red light (5).

Abstract: An optoelectronic arrangement having a radiation conversion element and a method for producing a radiation conversion element are disclosed. In an embodiment, an optoelectronic arrangement includes a semiconductor chip having an active region configured to generate radiation, a radiation conversion element arranged downstream of the semiconductor chip in an emission direction and a reflective polarization element arranged downstream of the radiation conversion element in the emission direction. The radiation conversion element has a plurality of conversion elements, each of which has an axis of symmetry, the spatial orientation of the axes of symmetry has a preferred direction and a radiation emitted by the radiation conversion element has a preferred polarization. The reflective polarization element largely allows radiation with the preferred polarization to pass through and largely reflects radiation polarized perpendicularly to the preferred polarization.

Abstract: In at least one embodiment, the semiconductor layering sequence (1) is designed for generating light and comprises semiconductor columns (2). The semiconductor columns (2) have a respective core (21) made of a semiconductor material of a first conductivity type, and a core shell (23) surrounding the core (21) made of a semiconductor material of a second conductivity type. There is an active zone (22) between the core (21) and the core shell (23) for generating a primary radiation by means of electroluminescence. A respective conversion shell (4) is placed onto the semiconductor columns (2), which conversion shell at least partially interlockingly surrounds the corresponding core shell (23), and which at least partially absorbs the primary radiation and converts same into a secondary radiation of a longer wavelength by means of photoluminescence. The conversion shells (4) which are applied to adjacent semiconductor columns (2), only incompletely fill an intermediate space between the semiconductor columns (2).

Abstract: A method for producing an optoelectronic semiconductor chip based on a nitride semiconductor system is specified. The method comprises the steps of: forming a semiconductor section with at least one p-doped region; and forming a covering layer disposed downstream of the semiconductor section in a growth direction of the semiconductor chip, said covering layer having at least one n-doped semiconductor layer. An activation step suitable for electrically activating the p-doped region is effected before or during the formation of the covering layer. An optoelectronic semiconductor chip which can be produced by the method is additionally specified.

Abstract: An optoelectronic semiconductor chip includes a multiplicity of active regions arranged at a distance from one another, and a continuous current spreading layer, wherein at least one of the active regions has a main extension direction, one of the active regions has a core region formed with a first semiconductor material, the active region has an active layer covering the core region at least in directions transversely with respect to the main extension direction of the active region, the active region has a cover layer formed with a second semiconductor material and covers the active layer at least in directions transversely with respect to the main extension direction of the active region, and the current spreading layer covers all cover layers of the active region.

Abstract: In at least one embodiment of the method, said method includes the following steps: A) producing radiation-active islands (4) having a semiconductor layer sequence (3) on a growth substrate (2), wherein the islands (4) each comprise at least one active zone (33) of the semiconductor layer sequence (3), and an average diameter of the islands (4), as viewed in a top view of the growth substrate, amounts to between 50 nm and 10 ?m inclusive, B) producing a separating layer (5) on a side of the islands (4) facing the growth substrate (2), wherein the separating layer (5) surrounds the islands (4) all around, as viewed in a top view of the growth substrate (2), C) attaching a carrier substrate (6) to a side of the islands (4) facing away from the growth substrate (2), and D) detaching the growth substrate (2) from the islands (4), wherein at least a part of the separating layer (5) is destroyed and/or at least temporarily softened during the detachment.

Abstract: A laser diode arrangement having at least one semiconductor substrate, having at least two laser stacks each having an active zone and having at least one intermediate layer. The laser stacks and the intermediate layer are grown monolithically on the semiconductor substrate. The intermediate layer is arranged between the laser stacks. The active zone of the first laser stack can be actuated separately from the active zone of the at least one further laser stack.

Abstract: An optoelectronic device (10, 1010) having a semiconductor layer structure (100, 1100) comprising a first light-active layer (140) and a second light-active layer (240). A first tunnel junction (200) is formed between the first light-active layer (140) and the second light-active layer (240). A first Bragg reflector (160) is formed between the first light-active layer (140) and the first tunnel junction (200). A second Bragg reflector (260) is formed between the second light-active layer (240) and the first tunnel junction (200).

Abstract: An optoelectronic semiconductor component and a method for manufacturing an optoelectronic semiconductor component are disclosed. In an embodiment, the component includes a plurality of active regions configured to generate a primary radiation and a plurality of luminescent material particles configured to convert the primary radiation into a secondary radiation, wherein the active regions are arranged spaced apart from each other, wherein each active region has a main extension direction, wherein each active region has a core region comprising a first semiconductor material, wherein each active region has an active layer covering the core region, wherein each active region has a cover layer comprising a second semiconductor material and covering the active layer, wherein at least some of the luminescent material particles are arranged between the active regions, and wherein a diameter of a majority of the luminescent material particles is smaller than a distance between two adjacent active regions.

Abstract: An optoelectronic semiconductor chip includes a multiplicity of active regions arranged at a distance from one another, and a continuous current spreading layer, wherein at least one of the active regions has a main extension direction, one of the active regions has a core region formed with a first semiconductor material, the active region has an active layer covering the core region at least in directions transversely with respect to the main extension direction of the active region, the active region has a cover layer formed with a second semiconductor material and covers the active layer at least in directions transversely with respect to the main extension direction of the active region, and the current spreading layer covers all cover layers of the active region.

Abstract: An assembly includes a carrier and a structure having a core formed on the carrier, wherein the core has a longitudinal extension having two end regions, a first end region is arranged facing the carrier and a second end region is arranged facing away from the carrier, the core is formed as electrically conductive at least in an outer region, the region is at least partially covered with an active zone layer, the active zone layer generates electromagnetic radiation, a mirror layer is provided at least in one end region of the core to reflect electromagnetic radiation in a direction, a first electrical contact layer contacts an electrically conductive region of the core, and a second contact layer contacts the active zone layer.

Abstract: An optoelectronic device (10, 1010) having a semiconductor layer structure (100, 1100) comprising a first light-active layer (140) and a second light-active layer (240). A first tunnel junction (200) is formed between the first light-active layer (140) and the second light-active layer (240). A first Bragg reflector (160) is formed between the first light-active layer (140) and the first tunnel junction (200). A second Bragg reflector (260) is formed between the second light-active layer (240) and the first tunnel junction (200).

Abstract: A semiconductor chip with a layer stack includes a first semiconductor layer sequence and a second semiconductor layer sequence. The first semiconductor layer sequence includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and an active zone arranged therebetween. The second semiconductor layer sequence includes the second semiconductor region of the second conductivity type, a third semiconductor region of the first conductivity type and a second active zone arranged therebetween.