Abstract: A power semiconductor device includes a semiconductor substrate including at least one electrical structure. The at least one electrical structure has a blocking voltage of more than 20V. Further, the power semiconductor device includes an electrically insulating layer structure formed over at least a portion of a lateral surface of the semiconductor substrate. The electrically insulating layer structure embeds one or more local regions for storing charge carriers. Further, the one or more local regions includes in at least one direction a dimension of less than 200 nm.

Abstract: The present application relates to semiconductor devices, in particular to a device for monitoring a cell signal such as an electrical signal produced by living cells in response to external stimulation, optionally in real time, comprising (a) at least one discrete area comprising a high electron mobility transistor (HEMT); and (b) non-excitable cells attached to said HEMT (HEMT element) for example, fibroblasts, HEK, CHO cell lines, keratinocytes, etc. Preferably, the HEMT is an AlGaN/GaN FET. Accordingly, the device can be applied in uses and methods for monitoring a cell signal such as an electrical signal produced by living cells in response to external stimulation, optionally in real time. Likewise, the device can be applied for screening compounds that reverse, protect from and/or shield cells from external stimuli which cause damage to cells. Also, kits comprising the device are disclosed.

Abstract: A power semiconductor device includes a semiconductor substrate including at least one electrical structure. The at least one electrical structure has a blocking voltage of more than 20V. Further, the power semiconductor device includes an electrically insulating layer structure formed over at least a portion of a lateral surface of the semiconductor substrate. The electrically insulating layer structure embeds one or more local regions for storing charge carriers. Further, the one or more local regions includes in at least one direction a dimension of less than 200 nm.

Abstract: The invention relates to a radiation detector (10), in particular for detecting x-ray radiation, comprising a carrier substrate (11), a detector layer (12) which comprises GaN, is arranged on the carrier substrate (11) and has a thickness less than 50 ?m, and contact electrodes (13) which form ohmic contacts with the detector layer (12). The invention also relates to a measurement device which is equipped with at least one such radiation detector (10).

Abstract: A method for detecting radiation during the examination of a sample (1) comprises the steps of generating the radiation, more particularly X-ray radiation or proton radiation, by means of a source device (10), passing the radiation through the sample (1), and detecting the radiation by means of at least one photoelectric solid-state detector (20) containing a photoconduction section having a predetermined response threshold and a potential well section for taking up free charge carriers. The solid-state detector (20) is a GaN- or GaAs-based semiconductor detector and the potential well section contains a two-dimensional electron gas (2DEG). A setting of the radiation is provided in such a way that the solid-state detector (20) is operated separately from the response threshold of the photoconduction section and in a sensitivity range of the potential well section.

Abstract: The invention relates to an X-ray camera (100) for the high-resolution detection of X-rays (1), comprising a plurality of radiation detectors (10), each of which has a carrier substrate (11), a detector layer (12), and contact electrodes (13). The detector layer (12) contains GaN, lies on the carrier substrate (11), and has a thickness of less than 50 ?m. The contact electrodes (13) form ohmic contacts with the detector layer (12). The X-ray camera also comprises a retaining device (20) on which the radiation detectors (10) are arranged along a specified reference line or reference surface (21). The invention also relates to a method for capturing an image of an object (2, 3) being examined using X-rays (1), said X-ray camera (100) being used in the method.

Abstract: A method for detecting radiation during the examination of a sample (1) comprises the steps of generating the radiation, more particularly X-ray radiation or proton radiation, by means of a source device (10), passing the radiation through the sample (1), and detecting the radiation by means of at least one photoelectric solid-state detector (20) containing a photoconduction section having a predetermined response threshold and a potential well section for taking up free charge carriers. The solid-state detector (20) is a GaN- or GaAs-based semiconductor detector and the potential well section contains a two-dimensional electron gas (2DEG). A setting of the radiation is provided in such a way that the solid-state detector (20) is operated separately from the response threshold of the photoconduction section and in a sensitivity range of the potential well section.

Abstract: The invention relates to an X-ray camera (100) for the high-resolution detection of X-rays (1), comprising a plurality of radiation detectors (10), each of which has a carrier substrate (11), a detector layer (12), and contact electrodes (13). The detector layer (12) contains GaN, lies on the carrier substrate (11), and has a thickness of less than 50 ?m. The contact electrodes (13) form ohmic contacts with the detector layer (12). The X-ray camera also comprises a retaining device (20) on which the radiation detectors (10) are arranged along a specified reference line or reference surface (21). The invention also relates to a method for capturing an image of an object (2, 3) being examined using X-rays (1), said X-ray camera (100) being used in the method.

Abstract: A process is provided for producing a polycrystalline layer. This process includes the steps of: applying to a substrate a layer sequence comprising at least one amorphous starting layer provided with impurities, a metallic activator layer, and a cleaning layer based on titanium or titanium oxide arranged between the starting layer and the activator layer for withdrawing the impurities from the starting layer; and carrying out a heat treatment after the layer sequence has been applied for forming a polycrystalline end layer.

Abstract: The present application relates to semiconductor devices, in particular to a device for monitoring a cell signal such as an electrical signal produced by living cells in response to external stimulation, optionally in real time, comprising (a) at least one discrete area comprising a high electron mobility transistor (HEMT); and (b) non-excitable cells attached to said HEMT (HEMT element) for example, fibroblasts, HEK, CHO cell lines, keratinocytes, etc. Preferably, the HEMT is an AlGaN/GaN FET. Accordingly, the device can be applied in uses and methods for monitoring a cell signal such as an electrical signal produced by living cells in response to external stimulation, optionally in real time. Likewise, the device can be applied for screening compounds that reverse, protect from and/or shield cells from external stimuli which cause damage to cells. Also, kits comprising the device are disclosed.

Abstract: A method for security purposes is disclosed, in which a challenge signal is applied to a physical object and a response signal is received from the physical object. The response signal comprises a plurality of characteristic resonant optical mode or a characteristic of the response signal is determined based on a spatial resolution of at least two frequency components of the response signal that is affected by luminescence effect.

Abstract: The present invention provides a porous semiconductive structure, characterized in that the structure has an electrical conductivity of 5·10?8 S·cm?1 to 10 S·cm?1, and an activation energy of the electrical conductivity of 0.1 to 700 meV, and a solid fraction of 30 to 60% by volume, and a pore size of 1 nm to 500 nm, the solid fraction having at least partly crystalline doped constituents which are bonded to one another via sinter necks and have sizes of 5 nm to 500 nm and a spherical and/or ellipsoidal shape, which comprise the elements silicon, germanium or an alloy of these elements, and also a process for producing a porous semiconductive structure, characterized in that A. doped semimetal particles are obtained, and then B. a dispersion is obtained from the semimetal particles obtained after step A, and then C. a substrate is coated with the dispersion obtained after step B, and then D. the layer obtained after step C is treated by means of a solution of hydrogen fluoride in water, and then E.

Abstract: In a method for producing polycrystalline layers a sequence of layers is deposited on a substrate (1), the sequence of layers comprising an amorphous initial layer (4), a metallic activation layer (2) and an intermediate layer (3) disposed between the amorphous initial layer (4) and the activation layer (2). The intermediate layer (3) is produced on the basis of titanium. The sequence of layer is heat treated for producing a polycrystalline final layer at the location of the activation layer (2).

Abstract: Nanoscale silicon particles, essentially hydrogen terminated nanoscale silicon particles, essentially alkyl terminated nanoscale silicon particles, partially alkyl terminated nanoscale silicon particles, methods for producing the particles, and methods for forming electrical components, electronic circuits, and electrochemically active fillers with the particles.

Abstract: A semiconductor body selected from the group consisting of a semiconductor layer, a semiconductor layer sequence or a semiconductor layer structure. The semiconductor body is transferred from a growth substrate to a support material by: exposing an interface between the growth substrate and the semiconductor body or a region in the vicinity of said interface to electromagnetic radiation through one of the semiconductor body and the growth substrate; decomposing a material at or in proximity to said interface by absorption of the electromagnetic radiation in proximity to or at said interface so that the semiconductor body can be separated from the growth substrate; and connecting the semiconductor body to the support material.

Abstract: The present invention provides a porous semiconductive structure, characterized in that the structure has an electrical conductivity of 5·10?8 S·cm?1 to 10 S·cm?1, and an activation energy of the electrical conductivity of 0.1 to 700 meV, and a solid fraction of 30 to 60% by volume, and a pore size of 1 nm to 500 nm, the solid fraction having at least partly crystalline doped constituents which are bonded to one another via sinter necks and have sizes of 5 nm to 500 nm and a spherical and/or ellipsoidal shape, which comprise the elements silicon, germanium or an alloy of these elements, and also a process for producing a porous semiconductive structure, characterized in that A. doped semimetal particles are obtained, and then B. a dispersion is obtained from the semimetal particles obtained after step A, and then C. a substrate is coated with the dispersion obtained after step B, and then D. the layer obtained after step C is treated by means of a solution of hydrogen fluoride in water, and then E.

Abstract: Layered germanium polymers that are semiconductive and demonstrate a strong red or infrared luminescence are produced through the topochemical conversion of calcium digermanide. Furthermore, silicon/germanium layer polymers can also be produced in this manner. These layer polymers can be produced epitaxially on substrates comprising crystalline germanium, and can be used to construct light-emitting optoelectronic components such as light-emitting diodes or lasers.

Abstract: A semiconductor body selected from the group consisting of a semiconductor layer, a semiconductor layer sequence or a semiconductor layer structure. The semiconductor body is transferred from a growth substrate to a support material by: exposing an interface between the growth substrate and the semiconductor body or a region in the vicinity of said interface to electromagnetic radiation through one of the semiconductor body and the growth substrate; decomposing a material at or in proximity to said interface by absorption of the electromagnetic radiation in proximity to or at said interface so that the semiconductor body can be separated from the growth substrate; and connecting the semiconductor body to the support material.

Abstract: A method for transferring a semiconductor body selected from the group consisting of a semiconductor layer, a semiconductor layer sequence or a semiconductor layer structure from a growth substrate to a support material. An interface between the growth substrate and the semiconductor body or a region in the vicinity of the interface is exposed to electromagnetic radiation through one of the semiconductor body and the growth substrate. A material at or in proximity to the interface is decomposed by absorption of the electromagnetic radiation in proximity to or at the interface so that the semiconductor body can be separated from the growth substrate. The semiconductor body is connected to the support material.

Abstract: A method for transferring a semiconductor body selected from the group consisting of a semiconductor layer, a semiconductor layer sequence or a semiconductor layer structure from a growth substrate to a support material. An interface between the growth substrate and the semiconductor body or a region in the vicinity of the interface is exposed to electromagnetic radiation through one of the semiconductor body and the growth substrate. A material at or in proximity to the interface is decomposed by absorption of the electromagnetic radiation in proximity to or at the interface so that the semiconductor body can be separated from the growth substrate. The semiconductor body is connected to the support material.