Patents by Inventor Martin U. Pralle
Martin U. Pralle has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230352511Abstract: Light trapping pixels, devices incorporating such pixels, and various associated methods are provided. In one aspect, for example, a light trapping pixel device can include a light sensitive pixel having a light incident surface, a backside surface opposite the light incident surface, and a peripheral sidewall disposed into at least a portion of the pixel and extending at least substantially around the pixel periphery. The pixel can also include a backside light trapping material substantially covering the backside surface and a peripheral light trapping material substantially covering the peripheral sidewall. The light contacting the backside light trapping material or the peripheral light trapping material is thus reflected back toward the pixel.Type: ApplicationFiled: June 21, 2023Publication date: November 2, 2023Inventors: Martin U. PRALLE, Jeffrey McKee, Jason Sickler
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Publication number: 20230335544Abstract: A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation.Type: ApplicationFiled: June 23, 2023Publication date: October 19, 2023Inventors: Jutao JIANG, Jeffrey MCKEE, Martin U. PRALLE
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Patent number: 11728322Abstract: A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation.Type: GrantFiled: February 25, 2022Date of Patent: August 15, 2023Assignee: SIONYX, LLCInventors: Jutao Jiang, Jeffrey McKee, Martin U. Pralle
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Patent number: 11721714Abstract: Light trapping pixels, devices incorporating such pixels, and various associated methods are provided. In one aspect, for example, a light trapping pixel device can include a light sensitive pixel having a light incident surface, a backside surface opposite the light incident surface, and a peripheral sidewall disposed into at least a portion of the pixel and extending at least substantially around the pixel periphery. The pixel can also include a backside light trapping material substantially covering the backside surface and a peripheral light trapping material substantially covering the peripheral sidewall. The light contacting the backside light trapping material or the peripheral light trapping material is thus reflected back toward the pixel.Type: GrantFiled: March 26, 2021Date of Patent: August 8, 2023Assignee: SiOnyx, LLCInventors: Martin U. Pralle, Jeffrey McKee, Jason Sickler
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Publication number: 20230051953Abstract: Image intensifier systems incorporating a microchannel plate (MCP) and methods for producing the same are disclosed. In some examples, a device is disclosed that includes a first substrate having a radiation-receiving first surface and an opposed second surface through which electromagnetic radiation is transmitted. A second substrate is coupled to the first substrate to define a vacuum cavity therebetween. An electron-emitting photocathode is disposed within the vacuum cavity for generating electrons from electromagnetic radiation transmitted through the second surface. A microchannel plate is disposed within the vacuum cavity and defines microchannels extending from an input end to an output end. Each of the microchannels is configured to generate electrons in response to an electron generated by the photocathode being received through the input end of the respective microchannel.Type: ApplicationFiled: August 15, 2022Publication date: February 16, 2023Applicant: SiOnyx, LLCInventors: Martin U. PRALLE, Christopher VINEIS
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Publication number: 20220359481Abstract: A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation.Type: ApplicationFiled: February 25, 2022Publication date: November 10, 2022Inventors: Jutao JIANG, Jeffrey MCKEE, Martin U. PRALLE
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Patent number: 11264371Abstract: A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation.Type: GrantFiled: July 31, 2020Date of Patent: March 1, 2022Assignee: SiOnyx, LLCInventors: Jutao Jiang, Jeffrey McKee, Martin U. Pralle
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Publication number: 20210217788Abstract: Light trapping pixels, devices incorporating such pixels, and various associated methods are provided. In one aspect, for example, a light trapping pixel device can include a light sensitive pixel having a light incident surface, a backside surface opposite the light incident surface, and a peripheral sidewall disposed into at least a portion of the pixel and extending at least substantially around the pixel periphery. The pixel can also include a backside light trapping material substantially covering the backside surface and a peripheral light trapping material substantially covering the peripheral sidewall. The light contacting the backside light trapping material or the peripheral light trapping material is thus reflected back toward the pixel.Type: ApplicationFiled: March 26, 2021Publication date: July 15, 2021Inventors: Martin U. Pralle, Jeffrey McKee, Jason Sickler
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Patent number: 10985198Abstract: Light trapping pixels, devices incorporating such pixels, and various associated methods are provided. In one aspect, for example, a light trapping pixel device can include a light sensitive pixel having a light incident surface, a backside surface opposite the light incident surface, and a peripheral sidewall disposed into at least a portion of the pixel and extending at least substantially around the pixel periphery. The pixel can also include a backside light trapping material substantially covering the backside surface and a peripheral light trapping material substantially covering the peripheral sidewall. The light contacting the backside light trapping material or the peripheral light trapping material is thus reflected back toward the pixel.Type: GrantFiled: March 1, 2019Date of Patent: April 20, 2021Assignee: SiOnyx, LLCInventors: Martin U. Pralle, Jeffrey McKee, Jason Sickler
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Publication number: 20200365644Abstract: A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation.Type: ApplicationFiled: July 31, 2020Publication date: November 19, 2020Inventors: Jutao JIANG, Jeffrey MCKEE, Martin U. PRALLE
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Patent number: 10748956Abstract: A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation.Type: GrantFiled: March 1, 2019Date of Patent: August 18, 2020Assignee: SiOnyx, LLCInventors: Jutao Jiang, Jeffrey McKee, Martin U. Pralle
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Publication number: 20190222778Abstract: Systems, devices, and methods for identifying an individual in both cooperative and non-cooperative situations are provided. In one aspect, for example, a system for identifying an individual can include an active light source capable of emitting electromagnetic radiation having at least one wavelength of from about 700 nm to about 1200 nm, and an imager device positioned to receive the electromagnetic radiation upon reflection from an individual to generate an electronic representation of the individual. The system can also include an image processing module functionally coupled to the imager device to receive the electronic representation. The image processing module processes the electronic representation into an individual representation having at least one substantially unique identification trait.Type: ApplicationFiled: March 25, 2019Publication date: July 18, 2019Inventors: Stephen D. Saylor, Martin U. Pralle
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Publication number: 20190206923Abstract: A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation.Type: ApplicationFiled: March 1, 2019Publication date: July 4, 2019Inventors: Jutao Jiang, Jeffrey McKee, Martin U. Pralle
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Publication number: 20190198538Abstract: Light trapping pixels, devices incorporating such pixels, and various associated methods are provided. In one aspect, for example, a light trapping pixel device can include a light sensitive pixel having a light incident surface, a backside surface opposite the light incident surface, and a peripheral sidewall disposed into at least a portion of the pixel and extending at least substantially around the pixel periphery. The pixel can also include a backside light trapping material substantially covering the backside surface and a peripheral light trapping material substantially covering the peripheral sidewall. The light contacting the backside light trapping material or the peripheral light trapping material is thus reflected back toward the pixel.Type: ApplicationFiled: March 1, 2019Publication date: June 27, 2019Inventors: Martin U. Pralle, Jeffrey McKee, Jason Sickler
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Patent number: 10244188Abstract: Systems, devices, and methods for identifying an individual in both cooperative and non-cooperative situations are provided. In one aspect, for example, a system for identifying an individual can include an active light source capable of emitting electromagnetic radiation having at least one wavelength of from about 700 nm to about 1200 nm, and an imager device positioned to receive the electromagnetic radiation upon reflection from an individual to generate an electronic representation of the individual. The system can also include an image processing module functionally coupled to the imager device to receive the electronic representation. The image processing module processes the electronic representation into an individual representation having at least one substantially unique identification trait.Type: GrantFiled: September 24, 2015Date of Patent: March 26, 2019Assignee: SiOnyx, LLCInventors: Stephen D. Saylor, Martin U. Pralle
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Patent number: 10229951Abstract: A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation.Type: GrantFiled: August 10, 2017Date of Patent: March 12, 2019Assignee: SiOnyx, LLCInventors: Jutao Jiang, Jeffrey McKee, Martin U. Pralle
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Patent number: 10224359Abstract: Light trapping pixels, devices incorporating such pixels, and various associated methods are provided. In one aspect, for example, a light trapping pixel device can include a light sensitive pixel having a light incident surface, a backside surface opposite the light incident surface, and a peripheral sidewall disposed into at least a portion of the pixel and extending at least substantially around the pixel periphery. The pixel can also include a backside light trapping material substantially covering the backside surface and a peripheral light trapping material substantially covering the peripheral sidewall. The light contacting the backside light trapping material or the peripheral light trapping material is thus reflected back toward the pixel.Type: GrantFiled: July 21, 2016Date of Patent: March 5, 2019Assignee: SiOnyx, LLCInventors: Martin U. Pralle, Jeffrey McKee, Jason Sickler
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Patent number: 9905599Abstract: Light trapping pixels, devices incorporating such pixels, and various associated methods are provided. In one aspect, for example, a light trapping pixel device can include a light sensitive pixel having a light incident surface, a backside surface opposite the light incident surface, and a peripheral sidewall disposed into at least a portion of the pixel and extending at least substantially around the pixel periphery. The pixel can also include a backside light trapping material substantially covering the backside surface and a peripheral light trapping material substantially covering the peripheral sidewall. The light contacting the backside light trapping material or the peripheral light trapping material is thus reflected back toward the pixel.Type: GrantFiled: June 23, 2015Date of Patent: February 27, 2018Assignee: SiOnyx, LLCInventors: Martin U. Pralle, Jeffrey McKee, Jason Sickler
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Publication number: 20170358621Abstract: A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation.Type: ApplicationFiled: August 10, 2017Publication date: December 14, 2017Inventors: Jutao Jiang, Jeffrey McKee, Martin U. Pralle
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Patent number: 9741761Abstract: A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation.Type: GrantFiled: April 4, 2014Date of Patent: August 22, 2017Assignee: SiOnyx, LLCInventors: Jutao Jiang, Jeffrey McKee, Martin U. Pralle