Patents by Inventor Martin Van Stuyvenberg

Martin Van Stuyvenberg has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for depositing layers on a glass substrate by means of low-pressure PECVD
    Patent number: 9533914
    Abstract: The invention relates to a method for producing metal or semiconductor oxide, nitride or oxynitride films on a substrate, by means of the PECVD method, including the steps that involve: (i) having a low-pressure PECVD device including at least one plasma source that includes at least one electrode connected to an AC, DC, or drawn DC generator for depositing said films on the substrate; and (ii) applying electrical power to the plasma source and applying, on the substrate, an oxide film gas precursor made of metal or semiconductor nitrides or oxynitrides and a reactive gas made of oxygen, oxygen derivatives, or nitrogen derivatives. The invention also relates to metal or semiconductor oxide, nitride, or oxynitride films obtained by the method.
    Type: Grant
    Filed: May 24, 2012
    Date of Patent: January 3, 2017
    Assignee: AGC GLASS EUROPE
    Inventors: Stijn Mahieu, Eric Tixhon, Martin Van Stuyvenberg, Hugues Wiame
  • METHOD FOR DEPOSITING LAYERS ON A GLASS SUBSTRATE BY MEANS OF LOW-PRESSURE PECVD
    Publication number: 20140099451
    Abstract: The invention relates to a method for producing metal or semiconductor oxide, nitride or oxynitride films on a substrate, by means of the PECVD method, including the steps that involve: (i) having a low-pressure PECVD device including at least one plasma source that includes at least one electrode connected to an AC, DC, or drawn DC generator for depositing said films on the substrate; and (ii) applying electrical power to the plasma source and applying, on the substrate, an oxide film gas precursor made of metal or semiconductor nitrides or oxynitrides and a reactive gas made of oxygen, oxygen derivatives, or nitrogen derivatives. The invention also relates to metal or semiconductor oxide, nitride, or oxynitride films obtained by the method.
    Type: Application
    Filed: May 24, 2012
    Publication date: April 10, 2014
    Applicant: AGC Glass Europe
    Inventors: Stijn Mahieu, Eric Tixhon, Martin Van Stuyvenberg, Hugues Wiame