Abstract: The invention, which relates to a method for checking periodic structures on lithography masks, in which an image of the structure of the lithography mask is generated by an imaging optic of a microscope, provides a method for inspecting structures on lithography masks which is used to represent deviations in the periodic structure of a lithography mask, a better demarcation of the periodic structure from a deviation being achieved. The parameters of wavelength ?, the numerical aperture NA and the coherence of the illumination ? of the imaging optic of the microscope are chosen such that the inequality P ? ? NA ? ( 1 + ? ) describing the resolution limit for a periodic structure having the period P is fulfilled, and in that the image of the structure that is generated in this way is evaluated for deviations in the periodic structure.

Abstract: The invention relates to a method for inspection of periodic structures on lithography masks using a microscope with adjustable illumination and an operating element for movement of a mechanical stage with the lithography mask attached to it in order to record images of the lithography mask at a computer-controlled location on the lithography mask. The position, the size and the pitch specification of the lithography mask are stored.

Abstract: The present invention relates to a method for removing defect material in a transmissive region of a lithography mask having transmissive carrier material and absorber material. A first method step involves removing defective material and absorber material in a processing region. A second method step involves applying an absorbent material in an outer region, the outer region depending on the partial region of the processing region that was previously covered with absorber material.

Abstract: The invention relates to a defect repair method, in particular for repairing quartz defects on alternating phase shift masks, wherein, for repairing defects (5) existing on one and the same component (1), both, defect repair method steps substantially based on mechanical processes (S3), in particular nanomachining method steps, and defect repair method steps substantially based on etching processes (S2), in particular FIB (Focused Ion Beam) method steps, are used. Moreover, the invention relates to a component (1), in particular a photomask, repaired by making use of such a defect repair method.

Abstract: The invention, which relates to a method for checking periodic structures on lithography masks, in which an image of the structure of the lithography mask is generated by an imaging optic of a microscope, provides a method for inspecting structures on lithography masks which is used to represent deviations in the periodic structure of a lithography mask, a better demarcation of the periodic structure from a deviation being achieved. The parameters of wavelength ?, the numerical aperture NA and the coherence of the illumination ? of the imaging optic of the microscope are chosen such that the inequality P??/NA(1+?) describing the resolution limit for a periodic structure having the period P is fulfilled, and in that the image of the structure that is generated in this way is evaluated for deviations in the periodic structure.

Abstract: The invention relates to a method for inspection of periodic structures on lithography masks using a microscope with adjustable illumination and an operating element for movement of a mechanical stage with the lithography mask attached to it in order to record images of the lithography mask at a computer-controlled location on the lithography mask. The position, the size and the pitch specification of the lithography mask are stored.

Abstract: The invention relates to a defect repair method, in particular for repairing quartz defects on alternating phase shift masks, wherein, for repairing defects (5) existing on one and the same component (1), both, defect repair method steps substantially based on mechanical processes (S3), in particular nanomachining method steps, and defect repair method steps substantially based on etching processes (S2), in particular FIB (Focused Ion Beam) method steps, are used. Moreover, the invention relates to a component (1), in particular a photomask, repaired by making use of such a defect repair method.

Abstract: An exposure mask has a phase mask and a phase-shifting dummy structure. The exposure mask can be repaired with regard to defects in the dummy structure. For that purpose, repair structures are applied on the exposure mask substrate material which have a lower phase shift compared to the dummy structures. The repair structure is preferably produced from carbon, the carbon being applied in a suitable layer thickness such that the repair structure no longer permits any transmission. In a preferred embodiment, the repair structure is arranged laterally offset with respect to the defect in the dummy structure.

Abstract: An exposure mask has a phase mask and a phase-shifting dummy structure. The exposure mask can be repaired with regard to defects in the dummy structure. For that purpose, repair structures are applied on the exposure mask substrate material which have a lower phase shift compared to the dummy structures. The repair structure is preferably produced from carbon, the carbon being applied in a suitable layer thickness such that the repair structure no longer permits any transmission. In a preferred embodiment, the repair structure is arranged laterally offset with respect to the defect in the dummy structure.

Abstract: A method and a device for analyzing structures of a photomask are described. In a first method step, at least one trench is created in the photomask, so that at least one lateral limitation of the trench forms a section through the structures to be analyzed. Then, the structures to be analyzed are scanned by scanning beams, which are guided through the trench on its lateral limitation.