Abstract: An image sensor, in particular, for endoscopic applications or miniaturized surveillance cameras. The sensor includes a matrix of image points arranged to provide an image of an explored area of which the shape substantially corresponds to the geometry of the matrix. This sensor consists of a matrix of photodetector cells structured in rows and columns, orthogonal to one another, which has a polygonal shape of which the contour has at least five sides that form part of a closed line, with orthogonal edges and oblique edges. This provides a solution to position the column and row address elements which allows each photoconductive cell to be connected to a current or voltage readout circuit, along oblique edges, such that the space beyond the matrix of photodetector elements is not substantially increased along the oblique edges.

Abstract: The present invention discloses an optoelectronic detector for light sensing. The optoelectronic detector has a photosensitive element that converts light into electrons. Efficient collection of these electrons at readout nodes, embedded in the photosensitive element, is required to make correct measurements of light characteristics such as, phase shift and intensity. This collection of electrons is achieved by applying a voltage gradient across an electrode within the optoelectronic detector. The optoelectronic detector can have multiple readout nodes. Further, the present invention discloses methods for detecting intensity and phase shift of impinging light and for suppression of background illumination while detecting the characteristics of light.

Abstract: The present invention discloses an optoelectronic detector for light sensing. The optoelectronic detector has a photosensitive element that converts light into electrons. Efficient collection of these electrons at readout nodes, embedded in the photosensitive element, is required to make correct measurements of light characteristics such as, phase shift and intensity. This collection of electrons is achieved by applying a voltage gradient across an electrode within the optoelectronic detector. The optoelectronic detector can have multiple readout nodes. Further, the present invention discloses methods for detecting intensity and phase shift of impinging light and for suppression of background illumination while detecting the characteristics of light.

Abstract: The present invention proposes a photodetector comprising a zone (2) of semiconductor material suitably doped voltage (4) and a sensing node (16), wherein the sensing node (16) is connected to a voltage sensing circuit comprising a capacitance (8) at its entrance, wherein means (9) are provided to deconnect the sensing node (16) from the voltage sensing circuit such as to temporarily sample and hold a voltage signal on said capacitance (8) of the voltage sensing circuit, and wherein that said capacitance (8) is connected to a non-linear voltage transconductance element suitable to prevent saturation of the voltage sensing circuit.

Abstract: A photodetector and a method for detecting radiation are disclosed. The photodetector comprises a zone of a semiconductor material suitably doped to collect photogenerated charges, coupled in parallel to a capacitance between a ground voltage and a sensing node. A metal oxide semiconductor (MOS) transistor is coupled at its source and a drain between the sensing node and a supply voltage, and a means for applying a predetermined voltage to the gate of the transistor Ls provided. In operation, the capacitance is first charged so that the magnitude of a voltage at the sensing node is greater than a transition voltage magnitude, and a predetermined gate voltage is applied. The transistor then is non-conductive, and a photocurrent of a magnitude dependent on the intensity of incident radiation flows through the zone of semiconductor material, discharging the capacitance and causing the sensing node voltage to vary substantially linearly with the photocurrent magnitude.

Abstract: The optoelectronic sensor comprises at least two pixels (1.11, 1.12, 1.21, 1.22), each pixel (1.11, 1.12, 1.21, 1.22) comprising a photodiode (2), and means for electrically connecting at least two pixels, the connecting means comprising FETs (6) for switching the connection on or off. The pixels (1.11, 1.12, 1.21, 1.22) are designed in such a way that if, e.g., four pixels (1.11, 1.12, 1.21, 1.22) are connected the photocharges generated in the connected pixels (1.11, 1.12, 1.21, 1.22) are combined in one of the connected pixels (1.22), whereby the spatial resolution of the sensor is reduced. A skimming FET (3) arranged between the photodiode (2) and a charge detection circuit (4) offers a floating source and floating drain in each pixel (1.11, 1.12, 1.21, 1.22). Thus the sensor can be manufactured in CMOS technology and is suited for photocharge binning. The invention makes it possible to vary the spatial resolution, the light sensitivity and/or the readout velocity by purely electronic means.