Abstract: An optical detector with an arrangement of several semiconductor layers has at least one zone absorbing in a predetermined wavelength region, at least one zone which is at least partially light-permeable in the predetermined wavelength region, one semiconductor layer which is absorbing in the predetermined wavelength region, a semiconductor layer which is located under the first mentioned semiconductor layer and is at least partially light-permeable in the predetermined wavelength region, the at least one light-permeable zone is formed as an interruption in the absorbing semiconductor layer, and a throughgoing doping provided on an upper surface of the absorbing semiconductor layer which surrounds the interruption and at least a part of an upper surface of the at least partially light-permeable semiconductor layer, wherein, the optical detector is produced by a new method and used for various applications.

Abstract: An optical detector with an arrangement of several semiconductor layers has at least one zone absorbing in a predetermined wavelength region, at least one zone which is at least partially light-permeable in the predetermined wavelength region, one semiconductor layer which is absorbing in the predetermined wavelength region, a semiconductor layer which is located under the first mentioned semiconductor layer and is at least partially light-permeable in the predetermined wavelength region, the at least one light-permeable zone is formed as an interruption in the absorbing semiconductor layer, and a throughgoing doping provided on an upper surface of the absorbing semiconductor layer which surrounds the interruption and at least a part of an upper surface of the at least partially light-permeable semiconductor layer, wherein the optical detector is produced by a new method and used for various applications.

Abstract: The device for generating an electrical control according to a position of a light beam in relation to a separating line includes two photodetectors (14,24), one (14) of which is arranged for detecting light falling on one side of the separating line and another (24) of which is arranged for detecting light falling on another side of the separating line. The separating line is an edge (30) extending between two (1,1,1) crystallographic planes of a crystalline substrate and the (1,1,1) crystallographic planes reflect respective parts of the light beam to the respective photodetectors.

Abstract: A semiconductor plate having an epitaxial layer of a conductivity type opposite to that of the substrate on which it is formed has a depression, including one or more elongate channels. The depression is etched into a depth passing entirely through the epitaxial layer to isolate at least one tongue extending from a tongue pedestal into the etched depression and having parallel major sides which are perpendicular to the principal planes of the semiconductor plate. The tongue is under-etched so that it will be free to vibrate by motion in directions parallel to the principal planes of the plate. One of the major sides of the tongue faces a stationary electrode across a gap and the electrode and the tongue are insulated from each other, at least in one embodiment, by the fact that the etched depression extends all the way through the epitaxial layer in its depth.