Patents by Inventor Martin Wasner

Martin Wasner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for producing a single crystal composed of silicon by remelting granules
    Patent number: 8834627
    Abstract: Silicon single crystals are grown by a method of remelting silicon granules, by crystallizing a conically extended section of the single crystal with the aid of an induction heating coil arranged below a rotating plate composed of silicon; feeding inductively melted silicon through a conical tube in the plate, the tube enclosing a central opening of the plate and extending below the plate, to a melt situated on the conically extended section of the single crystal in contact with a tube end of the conical tube, wherein by means of the induction heating coil below the plate, sufficient energy is provided to ensure that the external diameter of the tube end is not smaller than 15 mm as long as the conically extended section of the single crystal has a diameter of 15 to 30 mm.
    Type: Grant
    Filed: October 28, 2010
    Date of Patent: September 16, 2014
    Assignee: Siltronic AG
    Inventors: Wilfried von Ammon, Ludwig Altmannshofer, Martin Wasner
  • Method For Producing A Single Crystal Composed Of Silicon By Remelting Granules
    Publication number: 20110107960
    Abstract: Silicon single crystals are grown by a method of remelting silicon granules, by crystallizing a conically extended section of the single crystal with the aid of an induction heating coil arranged below a rotating plate composed of silicon; feeding inductively melted silicon through a conical tube in the plate, the tube enclosing a central opening of the plate and extending below the plate, to a melt situated on the conically extended section of the single crystal in contact with a tube end of the conical tube, wherein by means of the induction heating coil below the plate, sufficient energy is provided to ensure that the external diameter of the tube end is not smaller than 15 mm as long as the conically extended section of the single crystal has a diameter of 15 to 30 mm.
    Type: Application
    Filed: October 28, 2010
    Publication date: May 12, 2011
    Applicant: SILTRONIC AG
    Inventors: Wilfried von Ammon, Ludwig Altmannshofer, Martin Wasner