Abstract: The disclosure relates to a device for changing a shape of a surface of an optical element via electron irradiation. The device includes an electron irradiation unit for radiating electrons onto the surface with a locally resolved energy dose distribution for the purpose of producing local material densifications in the optical element. Furthermore, the device includes a control unit for determining a locally resolved energy dose distribution from a predefined desired change of a surface shape of the optical element by optimization via a minimization of a merit function, in such a way that a difference between the desired change and an actual change of the surface shape of the optical element, the actual change being brought about on account of the predefinition determined, is minimized.

Abstract: The disclosure relates to a device for changing a shape of a surface of an optical element via electron irradiation. The device includes an electron irradiation unit for radiating electrons onto the surface with a locally resolved energy dose distribution for the purpose of producing local material densifications in the optical element. Furthermore, the device includes a control unit for determining a locally resolved energy dose distribution from a predefined desired change of a surface shape of the optical element by optimization via a minimization of a merit function, in such a way that a difference between the desired change and an actual change of the surface shape of the optical element, the actual change being brought about on account of the predefinition determined, is minimized.

Abstract: A wavefront correction element for an optical system, in particular an optical system of a microlithographic projection exposure apparatus or a mask inspection apparatus, has a carrier film (110, 210, 410) which at least partly transmits electromagnetic radiation that has an operating wavelength of the optical system and that impinges on the carrier film during operation of the optical system. The carrier film (110, 210, 410) is configured such that the real part of the complex refractive index of the carrier film varies over a used region of the surface of the carrier film (110, 210, 410).

Abstract: A wavefront correction element for an optical system, in particular an optical system of a microlithographic projection exposure apparatus or a mask inspection apparatus, has a carrier film (110, 210, 410) which at least partly transmits electromagnetic radiation that has an operating wavelength of the optical system and that impinges on the carrier film during operation of the optical system. The carrier film (110, 210, 410) is configured such that the real part of the complex refractive index of the carrier film varies over a used region of the surface of the carrier film (110, 210, 410).

Abstract: A method for operating a data receiver for audio and/or video data, wherein a planned and variable program title sequence having program titles is recorded, audio and/or video data relating to at least one program title are received via a data link and are buffered, and audio and/or video data of at least one program title are reproduced. The transmission resources of the data link for audio and/or video data to be transmitted and to be buffered are distributed over at least two program titles that have not yet been reproduced by the data receiver. Also disclosed are a data receiver associated with the method and a media reproduction system connected thereto, in particular in a vehicle.

Abstract: Substrates suitable for mirrors which are used at wavelengths in the EUV wavelength range have a main body (2) and a polishing layer (3). The polishing layer (3) has a thickness of less than 10 ?m and a root-mean-square roughness of less than 0.5 nm and the main body (2) is produced from an aluminum alloy. Moreover, a highly reflective layer (6) is provided on the polishing layer (3) of the substrate (1) of the EUV mirror (5).

Abstract: A reflective optical element 39 for EUV wavelengths having a layer arrangement on the surface of a substrate, wherein the layer arrangement includes at least one layer subsystem 37 consisting of a periodic sequence of at least one period of individual layers. The period includes two individual layers having different refractive indices in the EUV wavelength range. The substrate has a variation of the density of more than 1% by volume at least along an imaginary surface 30 at a fixed distance of between 0 ?m and 100 ?m from the surface. Also, the substrate is protected against long-term aging or densification by EUV radiation either with a protective layer, with a protective layer subsystem of the layer arrangement, or with a correspondingly densified surface region 35 of the substrate.

Abstract: A method for operating a data receiver for audio and/or video data, wherein a planned and variable program title sequence having program titles is recorded, audio and/or video data relating to at least one program title are received via a data link and are buffered, and audio and/or video data of at least one program title are reproduced. The transmission resources of the data link for audio and/or video data to be transmitted and to be buffered are distributed over at least two program titles that have not yet been reproduced by the data receiver. Also disclosed are a data receiver associated with the method and a media reproduction system connected thereto, in particular in a vehicle.

Abstract: A method for processing the surface of a component, or the processing of an optical element through an ion beam, directed onto the surface to be processed, whereby the surface is lowered and/or removed at least partially, and wherein the ions have a kinetic energy of 100 keV or more, as well as optical elements processed in accordance with the method.

Abstract: Mirrors having a reflecting coating for the EUV wavelength region and a substrate. A surface region of the substrate extends uniformly below the reflecting coating along this coating and, seen from the surface of the substrate, has a depth of down to 5 ?m. Here, this surface region has a 2% higher density than the remaining substrate. Also disclosed are substrates that likewise have such surface regions and methods for producing such mirrors and substrates having such surface regions by irradiation using ions or electrons.

Abstract: A method for processing the surface of a component, or the processing of an optical element through an ion beam, directed onto the surface to be processed, whereby the surface is lowered and/or removed at least partially, and wherein the ions have a kinetic energy of 100 keV or more, as well as optical elements processed in accordance with the method.

Abstract: A method for processing the surface of a component, or the processing of an optical element through an ion beam, directed onto the surface to be processed, so that the surface is lowered and/or removed at least partially, wherein the ions have a kinetic energy of 100 keV or more, as well as optical elements processed by the method.

Abstract: A method for removing at least one reflective layer (4a, 4b) from an optical element (1) for EUV lithography, wherein the optical element (1) has a substrate (2) and an interlayer (6) between the substrate (2) and the at least one reflective layer (4a, 4b). The method includes etching away the at least one reflective layer (4a, 4b) as far as the interlayer (6) with an etching gas (7), wherein the material of the interlayer (6) does not react with the etching gas (7), and wherein, after the etching away, the interlayer (6) has a surface roughness of less than 0.5 nm rms, preferably of less than 0.2 nm rms, and more preferably of less than 0.1 nm rms. Also, an optical element (1) for reflecting radiation in the EUV wavelength range includes a substrate (2), at least one reflective layer (4a, 4b), and an interlayer (6) arranged between the substrate (2) and the at least one reflective layer (4a, 4b).

Abstract: A method for removing at least one reflective layer (4a, 4b) from an optical element (1) for EUV lithography, wherein the optical element (1) has a substrate (2) and an interlayer (6) between the substrate (2) and the at least one reflective layer (4a, 4b). The method includes etching away the at least one reflective layer (4a, 4b) as far as the interlayer (6) with an etching gas (7), wherein the material of the interlayer (6) does not react with the etching gas (7), and wherein, after the etching away, the interlayer (6) has a surface roughness of less than 0.5 nm rms, preferably of less than 0.2 nm rms, and more preferably of less than 0.1 nm rms. Also, an optical element (1) for reflecting radiation in the EUV wavelength range includes a substrate (2), at least one reflective layer (4a, 4b), and an interlayer (6) arranged between the substrate (2) and the at least one reflective layer (4a, 4b).

Abstract: A mirror for use in a projection exposure apparatus is described. The mirror has a main surface extending beyond an outline of an optical surface of the main surface. The optical surface has a roughness of less than 1 nm rms, and the outline of the optical surface includes a portion where the main surface extends beyond the optical surface by less than 0.2 mm. Manufacturing the mirror may involve polishing the optical surface in regions of the main surface extending beyond the optical surface and removing material of the substrate carrying a portion of the surface extending beyond the optical surface.

Abstract: A method for processing the surface of a component, or the processing of an optical element through an ion beam, directed onto the surface to be processed, so that the surface is lowered and/or removed at least partially, wherein the ions have a kinetic energy of 100 keV or more, as well as optical elements processed by the method.

Abstract: Solder compositions are described that include at least about 2% of silver, at least about 60% of bismuth, and at least one coupling element, wherein the at least one coupling element forms a complex with bismuth. Layered materials are also described that include a surface or substrate; an electrical interconnect; the solder composition described herein; and a semiconductor die or package. Methods of producing a solder composition are also described that include: a) providing at least about 2% of silver, b) providing at least about 60% of bismuth, c) providing at least one coupling element, wherein the at least one coupling element forms a complex with bismuth, and d) blending the silver, bismuth and at least one coupling element to form the solder composition.

Abstract: The invention includes solder materials having low concentrations of alpha particle emitters, and includes methods of purification of materials to reduce a concentration of alpha particle emitters within the materials. The invention includes methods of reducing alpha particle flux in various lead-containing and lead-free materials through purification of the materials. The invention also includes methods of estimating the fractionation of a low concentration of one or more alpha particle emitters during purification of a material.

Abstract: The invention includes solder materials having low concentrations of alpha particle emitters, and includes methods of purification of materials to reduce a concentration of alpha particle emitters within the materials. The invention includes methods of reducing alpha particle flux in various lead-containing and lead-free materials through purification of the materials. The invention also includes methods of estimating the fractionation of a low concentration of one or more alpha particle emitters during purification of a material.

Abstract: The invention includes solder materials having low concentrations of alpha particle emitters, and includes methods of purification of materials to reduce a concentration of alpha particle emitters within the materials. The invention includes methods of reducing alpha particle flux in various lead-containing and lead-free materials through purification of the materials. The invention also includes methods of estimating the fractionation of a low concentration of one or more alpha particle emitters during purification of a material.