Abstract: The invention relates to an avalanche diode that can be employed as an ESD protection device. An avalanche ignition region is formed at the p-n junction of the diode and includes an enhanced defect concentration level to provide rapid onset of avalanche current. The avalanche ignition region is preferably formed wider than the diode depletion zone, and is preferably created by placement, preferably by ion implantation, of an atomic specie different from that of the principal device structure. The doping concentration of the placed atomic specie should be sufficiently high to ensure substantially immediate onset of avalanche current when the diode breakdown voltage is exceeded. The new atomic specie preferably comprises argon or nitrogen, but other atomic species can be employed. However, other means of increasing a defect concentration level in the diode depletion zone, such as an altered annealing program, are also contemplated.

Abstract: The invention relates to an avalanche diode that can be employed as an ESD protection device. An avalanche ignition region is formed at the p-n junction of the diode and includes an enhanced defect concentration level to provide rapid onset of avalanche current. The avalanche ignition region is preferably formed wider than the diode depletion zone, and is preferably created by placement, preferably by ion implantation, of an atomic specie different from that of the principal device structure. The doping concentration of the placed atomic specie should be sufficiently high to ensure substantially immediate onset of avalanche current when the diode breakdown voltage is exceeded. The new atomic specie preferably comprises argon or nitrogen, but other atomic species can be employed. However, other means of increasing a defect concentration level in the diode depletion zone, such as an altered annealing program, are also contemplated.

Abstract: The invention relates to an avalanche diode that can be employed as an ESD protection device. An avalanche ignition region is formed at the p-n junction of the diode and includes an enhanced defect concentration level to provide rapid onset of avalanche current. The avalanche ignition region is preferably formed wider than the diode depletion zone, and is preferably created by placement, preferably by ion implantation, of an atomic specie different from that of the principal device structure. The doping concentration of the placed atomic specie should be sufficiently high to ensure substantially immediate onset of avalanche current when the diode breakdown voltage is exceeded. The new atomic specie preferably comprises argon or nitrogen, but other atomic species can be employed. However, other means of increasing a defect concentration level in the diode depletion zone, such as an altered annealing program, are also contemplated.

Abstract: The invention relates to an avalanche diode that can be employed as an ESD protection device. An avalanche ignition region is formed at the p-n junction of the diode and includes an enhanced defect concentration level to provide rapid onset of avalanche current. The avalanche ignition region is preferably formed wider than the diode depletion zone, and is preferably created by placement, preferably by ion implantation, of an atomic specie different from that of the principal device structure. The doping concentration of the placed atomic specie should be sufficiently high to ensure substantially immediate onset of avalanche current when the diode breakdown voltage is exceeded. The new atomic specie preferably comprises argon or nitrogen, but other atomic species can be employed. However, other means of increasing a defect concentration level in the diode depletion zone, such as an altered annealing program, are also contemplated.

Abstract: The invention relates to an avalanche diode that can be employed as an ESD protection device. An avalanche ignition region is formed at the p-n junction of the diode and includes an enhanced defect concentration level to provide rapid onset of avalanche current. The avalanche ignition region is preferably formed wider than the diode depletion zone, and is preferably created by placement, preferably by ion implantation, of an atomic specie different from that of the principal device structure. The doping concentration of the placed atomic specie should be sufficiently high to ensure substantially immediate onset of avalanche current when the diode breakdown voltage is exceeded. The new atomic specie preferably comprises argon or nitrogen, but other atomic species can be employed. However, other means of increasing a defect concentration level in the diode depletion zone, such as an altered annealing program, are also contemplated.

Abstract: The invention relates to an avalanche diode that can be employed as an ESD protection device. An avalanche ignition region is formed at the p-n junction of the diode and includes an enhanced defect concentration level to provide rapid onset of avalanche current. The avalanche ignition region is preferably formed wider than the diode depletion zone, and is preferably created by placement, preferably by ion implantation, of an atomic specie different from that of the principal device structure. The doping concentration of the placed atomic specie should be sufficiently high to ensure substantially immediate onset of avalanche current when the diode breakdown voltage is exceeded. The new atomic specie preferably comprises argon or nitrogen, but other atomic species can be employed. However, other means of increasing a defect concentration level in the diode depletion zone, such as an altered annealing program, are also contemplated.

Abstract: The invention relates to an avalanche diode that can be employed as an ESD protection device. An avalanche ignition region is formed at the p-n junction of the diode and includes an enhanced defect concentration level to provide rapid onset of avalanche current. The avalanche ignition region is preferably formed wider than the diode depletion zone, and is preferably created by placement, preferably by ion implantation, of an atomic specie different from that of the principal device structure. The doping concentration of the placed atomic specie should be sufficiently high to ensure substantially immediate onset of avalanche current when the diode breakdown voltage is exceeded. The new atomic specie preferably comprises argon or nitrogen, but other atomic species can be employed. However, other means of increasing a defect concentration level in the diode depletion zone, such as an altered annealing program, are also contemplated.

Abstract: In a method for producing an electronic component, a substrate is doped by introducing doping atoms. In the doped substrate, at least one connection region of the electronic component is formed by doping with doping atoms. Furthermore, at least one additional doped region is formed at least below the at least one connection region by doping with doping atoms. Furthermore, at least one well region is formed in the substrate by doping with doping atoms in such a way that the well region doping is blocked at least below the at least one additional doped region.

Abstract: A method for protecting a semiconductor circuit from electrostatic discharge is disclosed. An electrostatic discharge is received at a node. Current created by the electrostatic discharge is directed vertically into a semiconductor body, laterally through the semiconductor and beneath a trench isolation region so that the current flows in a direction parallel to an upper surface of the semiconductor body, and to a reference supply node. The reference supply node being formed in a conductive layer disposed over the upper surface of the semiconductor body.

Abstract: A method for protecting a semiconductor circuit from electrostatic discharge is disclosed. An electrostatic discharge is received at a node. Current created by the electrostatic discharge is directed vertically into a semiconductor body, laterally through the semiconductor and beneath a trench isolation region so that the current flows in a direction parallel to an upper surface of the semiconductor body, and to a reference supply node. The reference supply node being formed in a conductive layer disposed over the upper surface of the semiconductor body.

Abstract: A semiconductor device (10) includes a semiconductor body (12) of a first conductivity type (e.g., p-type). A first doped region (14) of a second conductivity type (e.g., n-type) is disposed at an upper surface of the semiconductor body (12). A second doped region (16) of the second conductivity type is disposed at the upper surface of the semiconductor body (12) and is separated from the first doped region (14) by an isolation region (18). A first contact (26) overlies and is electrically coupled to the first doped region (14) and a second contact (28) overlies and is electrically coupled to the second doped region (16). A third doped region (32) of the first conductivity type is disposed within the semiconductor body (12) beneath the first doped region (14).

Abstract: An ESD protection device includes a source region, a channel region adjacent the source region, and an elongated drain region spaced from the source region by the channel region. The elongated drain region includes an unsilicided portion adjacent the channel and a silicided portion spaced from channel region by the unsilicided portion. A first ESD region is located beneath the silicided portion of the elongated drain region and a second ESD region is located beneath the unsilicided portion of the elongated drain region, the second ESD region being spaced from the first ESD region.

Abstract: The invention relates to an avalanche diode that can be employed as an ESD protection device. An avalanche ignition region is formed at the p-n junction of the diode and includes an enhanced defect concentration level to provide rapid onset of avalanche current. The avalanche ignition region is preferably formed wider than the diode depletion zone, and is preferably created by placement, preferably by ion implantation, of an atomic specie different from that of the principal device structure. The doping concentration of the placed atomic specie should be sufficiently high to ensure substantially immediate onset of avalanche current when the diode breakdown voltage is exceeded. The new atomic specie preferably comprises argon or nitrogen, but other atomic species can be employed. However, other means of increasing a defect concentration level in the diode depletion zone, such as an altered annealing program, are also contemplated.

Abstract: A circuit is described that protects an integrated circuit from electrostatic discharges or electrical over-stress. The circuit arrangement has first and second protective elements connected in series between a connection of the integrated circuit and a supply voltage. When electrostatic discharges or electrical over-stress occurs, current flows through the conductive path formed through the first and second protective elements. A current path that contains a circuit element limits current through the first protective element is connected in parallel with the first protective element. The first protective element has blocking behavior when no electrostatic discharges or electrical over-stress occurs, a limited current flows through the current path and the second protective element.

Abstract: An ESD protection device includes a source region, a channel region adjacent the source region, and an elongated drain region spaced from the source region by the channel region. The elongated drain region includes an unsilicided portion adjacent the channel and a silicided portion spaced from channel region by the unsilicided portion. A first ESD region is located beneath the silicided portion of the elongated drain region and a second ESD region is located beneath the unsilicided portion of the elongated drain region, the second ESD region being spaced from the first ESD region.

Abstract: In a method for producing an electronic component, a substrate is doped by introducing doping atoms. In the doped substrate, at least one connection region of the electronic component is formed by doping with doping atoms. Furthermore, at least one additional doped region is formed at least below the at least one connection region by doping with doping atoms. Furthermore, at least one well region is formed in the substrate by doping with doping atoms in such a way that the well region doping is blocked at least below the at least one additional doped region.

Abstract: A semiconductor device (10) includes a semiconductor body (12) of a first conductivity type (e.g., p-type). A first doped region (14) of a second conductivity type (e.g., n-type) is disposed at an upper surface of the semiconductor body (12). A second doped region (16) of the second conductivity type is disposed at the upper surface of the semiconductor body (12) and is separated from the first doped region (14) by an isolation region (18). A first contact (26) overlies and is electrically coupled to the first doped region (14) and a second contact (28) overlies and is electrically coupled to the second doped region (16). A third doped region (32) of the first conductivity type is disposed within the semiconductor body (12) beneath the first doped region (14).

Abstract: An ESD protective circuit protects an input or output of a monolithically integrated circuit. The ESD protective circuit has at least one bipolar transistor structure and one ESD protective element between two supply networks. The emitter of the bipolar transistor structure is electrically connected to the input or output, while the base is electrically connected to one of the two supply networks. The collector produces a current signal, which is used for triggering of the ESD protective element, when an ESD load occurs at the input or output.

Abstract: A circuit is described that protects an integrated circuit from electrostatic discharges or electrical over-stress. The circuit arrangement has first and second protective elements connected in series between a connection of the integrated circuit and a supply voltage. When electrostatic discharges or electrical over-stress occurs, current flows through the conductive path formed through the first and second protective elements. A current path that contains a circuit element limits current through the first protective element is connected in parallel with the first protective element. The first protective element has blocking behavior when no electrostatic discharges or electrical over-stress occurs, a limited current flows through the current path and the second protective element.

Abstract: To test the ESD resistance of a semiconductor component, for example of a NOS transistor, which can be used as a PSD protective element in a chip, a direct current characteristic of the semiconductor component is monitored and the ESD resistance of the respective semiconductor component is inferred depending on this. In particular, the direct current failure threshold of the semiconductor component at which an increased leakage current occurs in the non-conducting direction of the semiconductor component can be monitored in operation of the semiconductor component using an applied direct current and the ESD resistance of the semiconductor component inferred depending on a change in this direct current failure threshold.