Abstract: An infrared device comprises a substrate. A configuration for emitting infrared radiation is supported by the substrate. The configuration comprises an electrically conducting layer arrangement of less than 50 nm thickness between dielectric layers. In addition, a heater arranged for heating the configuration to emit the infrared radiation is supported by the substrate.

Abstract: A gas sensor module integrated onto a board comprising at least one radiation source configured for emitting radiation, at least one radiation detector unit configured to detect at least part of said radiation, and a radiation cell providing at least one radiation path from said radiation source to said radiation detector unit. Said board is provided with a recess and said radiation path is propagating within said recess.

Abstract: An infrared device comprises a substrate. A configuration for emitting infrared radiation is supported by the substrate. The configuration comprises an electrically conducting layer arrangement of less than 50 nm thickness between dielectric layers. In addition, a heater arranged for heating the configuration to emit the infrared radiation is supported by the substrate.

Abstract: An infrared device comprises a substrate (1), and arranged on or in the substrate (1) a configuration (3) for one of selectively emitting and selectively absorbing infrared radiation of a band, the configuration (3) comprising a pattern made from an electrically conducting material on a first level (L1), an electrically conducting film (33) on a second level (L2), and a dielectric layer (24) between the pattern and the film (33). One or more of a heater (4) for heating the configuration (3), and a thermal sensor (5) arranged for sensing the selective infrared radiation of the band absorbed by the configuration (3) on or in the substrate.

Abstract: An infrared device comprises a substrate (1), and arranged on or in the substrate (1) a configuration (3) for one of selectively emitting and selectively absorbing infrared radiation of a band, the configuration (3) comprising a pattern made from an electrically conducting material on a first level (L1), an electrically conducting film (33) on a second level (L2), and a dielectric layer (24) between the pattern and the film (33). One or more of a heater (4) for heating the configuration (3), and a thermal sensor (5) arranged for sensing the selective infrared radiation of the band absorbed by the configuration (3) on or in the substrate.

Abstract: A gas sensor module integrated onto a board comprising at least one radiation source configured for emitting radiation, at least one radiation detector unit configured to detect at least part of said radiation, and a radiation cell providing at least one radiation path from said radiation source to said radiation detector unit. Said board is provided with a recess and said radiation path is propagating within said recess.

Abstract: Technologies are generally described for operating and manufacturing optomechanical accelerometers. In some examples, an optomechanical accelerometer device is described that uses a cavity resonant displacement sensor based on a zipper photonic crystal nano-cavity to measure the displacement of an integrated test mass generated by acceleration applied to the chip. The cavity-resonant sensor may be fully integrated on-chip and exhibit an enhanced displacement resolution due to its strong optomechanical coupling. The accelerometer structure may be fabricated in a silicon nitride thin film and constitute a rectangular test mass flexibly suspended on high aspect ratio inorganic nitride nano-tethers under high tensile stress. By increasing the mechanical Q-factors through adjustment of tether width and tether length, the noise-equivalent acceleration (NEA) may be reduced, while maintaining a large operation bandwidth. The mechanical Q-factor may be improved with thinner (e.g., <1 micron) and longer tethers (e.

Abstract: A sensor chip comprises a substrate (1) with a front side (11) and a back side (12), and an opening (13) in the substrate (1) reaching through from its back side (12) to its front side (11). A stack (2) of dielectric and conducting layers is arranged on the front side (11) of the substrate (1), a portion of which stack (2) spans the opening (13) of the substrate (1). Contact pads (32) are arranged at the front side (11) of the substrate (1) for electrically contacting the sensor chip. A sensing element (4) is arranged on the portion of the stack (2) spanning the opening (13) on a side of the portion facing the opening (13).

Abstract: A sensor chip comprises a substrate (1) with a front side (11) and a back side (12), and an opening (13) in the substrate (1) reaching through from its back side (12) to its front side (11). A stack (2) of dielectric and conducting layers is arranged on the front side (11) of the substrate (1), a portion of which stack (2) spans the opening (13) of the substrate (1). Contact pads (32) are arranged at the front side (11) of the substrate (1) for electrically contacting the sensor chip. A sensing element (4) is arranged on the portion of the stack (2) spanning the opening (13) on a side of the portion facing the opening (13).

Abstract: Technologies are generally described for operating and manufacturing optomechanical accelerometers. In some examples, an optomechanical accelerometer device is described that uses a cavity resonant displacement sensor based on a zipper photonic crystal nano-cavity to measure the displacement of an integrated test mass generated by acceleration applied to the chip. The cavity-resonant sensor may be fully integrated on-chip and exhibit an enhanced displacement resolution due to its strong optomechanical coupling. The accelerometer structure may be fabricated in a silicon nitride thin film and constitute a rectangular test mass flexibly suspended on high aspect ratio inorganic nitride nano-tethers under high tensile stress. By increasing the mechanical Q-factors through adjustment of tether width and tether length, the noise-equivalent acceleration (NEA) may be reduced, while maintaining a large operation bandwidth. The mechanical Q-factor may be improved with thinner (e.g., <1 micron) and longer tethers (e.

Abstract: The present disclosure describes an integrated opto-mechanical and electro-mechanical system. The opto-mechanical and electro-mechanical system can be made of photonic crystals configured to move based on electrical voltages and/or back action effects from electromagnetic waves, thus changing the resonance of the system.