Patents by Inventor Martina SCOLARI

Martina SCOLARI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD OF FABRICATION OF AN INTEGRATED THERMOELECTRIC CONVERTER, AND INTEGRATED THERMOELECTRIC CONVERTER THUS OBTAINED
    Publication number: 20230301191
    Abstract: A method of fabricating a thermoelectric converter that includes providing a layer of a Silicon-based material having a first surface and a second surface, opposite to and separated from the first surface by a Silicon-based material layer thickness; forming a plurality of first thermoelectrically active elements of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectrically active elements of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectrically active elements are formed to extend through the Silicon-based material layer thickness, from the first surface to the second surface; forming electrically conductive interconnections in correspondence of the first surface and of the second surface of the layer of Silicon-based material, for electrically interconnecting the plurality of first thermoelectrically active elements and the plurality of second thermoelectri
    Type: Application
    Filed: May 24, 2023
    Publication date: September 21, 2023
    Applicant: STMICROELECTRONICS S.r.l.
    Inventors: Paolo FERRARI, Flavio Francesco VILLA, Lucia ZULLINO, Andrea NOMELLINI, Luca SEGHIZZI, Luca ZANOTTI, Bruno MURARI, Martina SCOLARI
  • Method of fabrication of an integrated thermoelectric converter, and integrated thermoelectric converter thus obtained
    Patent number: 11696504
    Abstract: A method of fabricating a thermoelectric converter that includes providing a layer of a Silicon-based material having a first surface and a second surface, opposite to and separated from the first surface by a Silicon-based material layer thickness; forming a plurality of first thermoelectrically active elements of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectrically active elements of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectrically active elements are formed to extend through the Silicon-based material layer thickness, from the first surface to the second surface; forming electrically conductive interconnections in correspondence of the first surface and of the second surface of the layer of Silicon-based material, for electrically interconnecting the plurality of first thermoelectrically active elements and the plurality of second thermoelectri
    Type: Grant
    Filed: May 14, 2021
    Date of Patent: July 4, 2023
    Assignee: STMICROELECTRONICS S.r.l.
    Inventors: Paolo Ferrari, Flavio Francesco Villa, Lucia Zullino, Andrea Nomellini, Luca Seghizzi, Luca Zanotti, Bruno Murari, Martina Scolari
  • METHOD OF FABRICATION OF AN INTEGRATED THERMOELECTRIC CONVERTER, AND INTEGRATED THERMOELECTRIC CONVERTER THUS OBTAINED
    Publication number: 20210359189
    Abstract: A method of fabricating a thermoelectric converter that includes providing a layer of a Silicon-based material having a first surface and a second surface, opposite to and separated from the first surface by a Silicon-based material layer thickness; forming a plurality of first thermoelectrically active elements of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectrically active elements of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectrically active elements are formed to extend through the Silicon-based material layer thickness, from the first surface to the second surface; forming electrically conductive interconnections in correspondence of the first surface and of the second surface of the layer of Silicon-based material, for electrically interconnecting the plurality of first thermoelectrically active elements and the plurality of second thermoelectri
    Type: Application
    Filed: May 14, 2021
    Publication date: November 18, 2021
    Applicant: STMICROELECTRONICS S.r.l.
    Inventors: Paolo FERRARI, Flavio Francesco VILLA, Lucia ZULLINO, Andrea NOMELLINI, Luca SEGHIZZI, Luca ZANOTTI, Bruno MURARI, Martina SCOLARI