Abstract: Devices and methods are provided where a control terminal resistance of a transistor device is set depending on operating conditions within a specified range of operating conditions.

Abstract: In accordance with an embodiment of an integrated circuit, a cavity is buried in a semiconductor body below a first surface of the semiconductor body. An active area portion of the semiconductor body is arranged between the first surface and the cavity. The integrated circuit further includes a trench isolation structure configured to provide a lateral electric isolation of the active area portion.

Abstract: Devices and methods are provided where a control terminal resistance of a transistor device is set depending on operating conditions within a specified range of operating conditions.

Abstract: A semiconductor device includes a power transistor in a semiconductor substrate portion, where the semiconductor substrate portion includes a central portion and a kerf, components of the power transistor are arranged in the central portion, and the central portion has a thickness d. The semiconductor device also includes a support element disposed over a main surface of the central portion, where the support element has a smallest lateral extension t at a side adjacent to the main surface of the semiconductor substrate portion and a height h, where 0.1×h?d?4×h and 0.1×h?t?1.5×h.

Abstract: A method for forming a semiconductor device includes forming a plurality of non-semiconductor material portions at a first side of a semiconductor substrate; forming semiconductor material on the plurality of non-semiconductor material portions to bury the plurality of non-semiconductor material portions within semiconductor material; removing at least a portion of the semiconductor substrate from a second side of the semiconductor substrate to uncover the plurality of non-semiconductor material portions at a backside of the semiconductor device; and forming a rough surface at the backside of the semiconductor device by removing at least a subset of the plurality of non-semiconductor material portions while at least a part of a semiconductor material located laterally between the plurality of non-semiconductor material portions remains or by removing at least a part of a semiconductor material located laterally between the plurality of non-semiconductor material portions while the plurality of non-semiconduct

Abstract: Devices and methods are provided where a control terminal resistance of a transistor device is set depending on operating conditions within a specified range of operating conditions.

Abstract: In accordance with an embodiment of an integrated circuit, a cavity is buried in a semiconductor body below a first surface of the semiconductor body. An active area portion of the semiconductor body is arranged between the first surface and the cavity. The integrated circuit further includes a trench isolation structure configured to provide a lateral electric isolation of the active area portion.

Abstract: Devices and methods are provided where a control terminal resistance of a transistor device is set depending on operating conditions within a specified range of operating conditions.

Abstract: A method for forming a semiconductor device includes forming a plurality of non-semiconductor material portions at a first side of a semiconductor substrate; forming semiconductor material on the plurality of non-semiconductor material portions to bury the plurality of non-semiconductor material portions within semiconductor material; removing at least a portion of the semiconductor substrate from a second side of the semiconductor substrate to uncover the plurality of non-semiconductor material portions at a backside of the semiconductor device; and forming a rough surface at the backside of the semiconductor device by removing at least a subset of the plurality of non-semiconductor material portions while at least a part of a semiconductor material located laterally between the plurality of non-semiconductor material portions remains or by removing at least a part of a semiconductor material located laterally between the plurality of non-semiconductor material portions while the plurality of non-semiconduct

Abstract: A semiconductor device includes a power transistor in a semiconductor substrate portion, where the semiconductor substrate portion includes a central portion and a kerf, components of the power transistor are arranged in the central portion, and the central portion has a thickness d. The semiconductor device also includes a support element disposed over a main surface of the central portion, where the support element has a smallest lateral extension t at a side adjacent to the main surface of the semiconductor substrate portion and a height h, where 0.1×h?d?4×h and 0.1×h?t?1.5×h.

Abstract: A bond pad structure includes a first oxide layer that overlies a substrate. A plurality of adhesion structures are formed over the first oxide layer. A second oxide layer is formed over the plurality of adhesion structures and the first oxide layer. Each one of a plurality of contact openings formed within a surface region of the second oxide layer includes one or more sides and is aligned over at least a portion of a top surface of a corresponding one of the plurality of adhesion structures. A barrier layer is formed within the surface region that is over the second oxide layer and within the plurality of contact openings and over the at least a portion of the top surface of the corresponding ones of the plurality of adhesion structures. A metal layer is formed over the barrier layer.

Abstract: In various embodiments, a reticle is provided. The reticle may include a feature. The feature may include a base structure, and a step structure. The a step structure includes a center region and an edge region. The center region includes, in a top view, a larger width than the edge region. The step structure is configured to be arranged over a topography step of a substrate to be lithographically processed.