Patents by Inventor Martins RUTKIS

Martins RUTKIS has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High-bandwidth thermoelectric thin-film UV, visible light and infrared radiation sensor and a method for manufacturing thereof
    Patent number: 11656127
    Abstract: The invention relates to UV, visible light and infrared radiation sensors, in particular to high-bandwidth thin-film electromagnetic radiation sensors, operating using the principle of thermoelectric effect. According to one embodiment the sensor comprises: a thermoelectric active layer, an electrode layer one and an electrode layer two, wherein the electrode layer one is located below the thermoelectric active layer and the electrode layer two is located above the thermoelectric active layer, whereby the sensor is designed so that the thermal gradient can be created and the electrical voltage can be measured perpendicular to the thermoelectric active layer, between the electrode layer one and the electrode layer two, wherein the material of the thermoelectric active layer is low molecular weight organic compound, selected so that its thermal conductivity would be less than 1 W/(m K{circumflex over (?)}2), Seebeck coefficient modulus would be greater than 100 ?V/K and its molecular weight is less than 900 Da.
    Type: Grant
    Filed: September 20, 2019
    Date of Patent: May 23, 2023
    Assignee: LATVIJAS UNIVERSITATES CIETVIELU FIZIKAS INSTITUTS
    Inventors: Martins Rutkis, Aivars Vembris, Kaspars Pudzs, Janis Busenbergs
  • A HIGH-BANDWIDTH THERMOELECTRIC THIN-FILM UV, VISIBLE LIGHT AND INFRARED RADIATION SENSOR AND A METHOD FOR MANUFACTURING THEREOF
    Publication number: 20220364929
    Abstract: The invention relates to UV, visible light and infrared radiation sensors, in particular to high-bandwidth thin-film electromagnetic radiation sensors, operating using the principle of thermoelectric effect. According to one embodiment the sensor comprises: a thermoelectric active layer, an electrode layer one and an electrode layer two, wherein the electrode layer one is located below the thermoelectric active layer and the electrode layer two is located above the thermoelectric active layer, whereby the sensor is designed so that the thermal gradient can be created and the electrical voltage can be measured perpendicular to the thermoelectric active layer, between the electrode layer one and the electrode layer two, wherein the material of the thermoelectric active layer is low molecular weight organic compound, selected so that its thermal conductivity would be less than 1 W/(m K{circumflex over (?)}2), Seebeck coefficient modulus would be greater than 100 ?V/K and its molecular weight is less than 900 Da.
    Type: Application
    Filed: September 20, 2019
    Publication date: November 17, 2022
    Applicant: LATVIJAS UNIVERSITATES CIETVIELU FIZIKAS INSTITUTS
    Inventors: Martins RUTKIS, Aivars VEMBRIS, Kaspars PUDZS, Janis BUSENBERGS